최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0977324 (2007-10-24) |
등록번호 | US-7436194 (2008-10-14) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 5 인용 특허 : 904 |
A probe measurement system having low, stable contact resistance for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.
We claim: 1. A probe comprising: (a) a dielectric substrate supporting an elongate conductor on a first side of said substrate and supporting a conductive member on a second side of said substrate, said conductive member including a contact surface on a side of said conductive member distal of said
We claim: 1. A probe comprising: (a) a dielectric substrate supporting an elongate conductor on a first side of said substrate and supporting a conductive member on a second side of said substrate, said conductive member including a contact surface on a side of said conductive member distal of said dielectric substrate for contacting a device under test; and (b) a contact electrically interconnected to said elongate conductor and protruding from said second side of said substrate for contacting said device under test; (c) wherein said elongate conductor and said conductive member form a controlled impedance structure; and (d) wherein said probe has a characteristic that its contact resistance when said contact is engaged with un-patterned aluminum of said device under test is generally less than 30 milliohms during any engagement of an initial 5000 engagements of said contact and said un-patterned aluminum. 2. The probe of claim 1 further comprising a resiliently flexible structure interconnected with said dielectric substrate, and a pre-loading mechanism that pre-loads said flexible structure by imparting a pre-load displacement of said structure when said contact is free from being engaged with said device under test in such a manner that when said probe is displaced with said contact in engagement with said device under test a force exerted on said device under test by said contact is greater than said force would be if said pre-load displacement had not been imparted to said flexible structure. 3. The probe of claim 1 further comprising a conductive path between said first side of said substrate and said second side of said substrate. 4. The probe of claim 1 wherein said controlled impedance structure is a microstrip. 5. The probe of claim 2 wherein said flexible structure is a co-axial cable. 6. The probe of claim 1 herein said substrate has a thickness of less than 40 microns with a dielectric constant of less than 7. 7. The probe of claim 3 wherein said conductive path is in a region within the periphery of said substrate for at least a majority of the thickness of said substrate. 8. The probe of claim 1 wherein said elongate conductor is electrically interconnected to a central conductor of a coaxial cable. 9. The probe of claim 1 wherein said conductive member is electrically connected to a conductor surrounding a central conductor of a coaxial cable. 10. The probe of claim 1 wherein said contact resistance generally varies less than 5 mΩ over said initial 5000 engagements of said contact and said un-patterned aluminum. 11. A probe comprising: (a) a dielectric substrate supporting an elongate conductor on a first side of said substrate and supporting a conductive member on a second side said substrate, said conductive member including a contact surface on a side of said member distal of said substrate for contacting a device under test; and (b) a contact electrically interconnected to said elongate conductor and protruding from said second side of said substrate for contact with said device under test; (c) wherein said elongate conductor and said conductive member form a controlled impedance structure; and (d) wherein said probe has a characteristic that its contact resistance when said contact is engaged with un-patterned aluminum of said device under test is generally less than 35 milliohms throughout a 5 hour period of engagement of said contact and said un-patterned aluminum. 12. The probe of claim 11 wherein said contact resistance generally varies less than 10 milliohms throughout said 5 hour period of engagement of said contact and said un-patterned aluminum. 13. The probe of claim 11 further comprising a resiliently flexible structure interconnected with said dielectric substrate, and a pre-loading mechanism that pre-loads said flexible structure by imparting a pre-load displacement of said structure when said contact is free from being engaged with said device under test in such a manner that when said probe is displaced with said contact in engagement with said device under test a force exerted on said device under test by said contact is greater than said force would be if said pre-load displacement had not been imparted to said flexible structure. 14. The probe of claim 11 further comprising a conductive path between said first side of said substrate and said second side of said substrate. 15. The probe of claim 11 wherein said controlled impedance structure is a microstrip. 16. The probe of claim 13 wherein said flexible structure is a co-axial cable. 17. The probe of claim 11 herein said substrate has a thickness of less than 40 microns with a dielectric constant of less than 7. 18. The probe of claim 14 wherein said conductive path is in a region within the periphery of said substrate for at least a majority of the thickness of said substrate. 19. The probe of claim 11 wherein said elongate conductor is electrically interconnected to a central conductor of a coaxial cable. 20. The probe of claim 11 wherein said conductive member is electrically connected to a conductor surrounding a central conductor of a coaxial cable.
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