A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps: (1) bombarding one face of the sub
A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps: (1) bombarding one face of the substrate with ions of a non-gaseous heavy species in order to implant those ions in a concentration sufficient to create in the substrate a layer of microcavities containing a gaseous phase formed by the element of the substrate; (2) bringing this face of the substrate into intimate contact with a stiffener; and (3) obtaining cleavage at the level of the microcavity layer by the application of heat treatment and/or a splitting stress.
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The invention claimed is: 1. A method of fabricating thin films of semiconductor materials by implanting ions in a substrate, the substrate comprising at least two different elements at least one of which can form a gaseous phase on bonding with itself or with impurities or both, the method compris
The invention claimed is: 1. A method of fabricating thin films of semiconductor materials by implanting ions in a substrate, the substrate comprising at least two different elements at least one of which can form a gaseous phase on bonding with itself or with impurities or both, the method comprising the following steps: (1) bombarding one face of the substrate with ions of a non-gaseous heavy species in order to implant those ions in a concentration sufficient to create in the substrate a layer of microcavities containing a gaseous phase formed by at least one of the at least two different elements of the substrate; (2) bringing the face of the substrate into intimate contact with a stiffener; and (3) cleaving the substrate at the level of the microcavity layer by the application of heat treatment or a splitting stress, or both. 2. The method according to claim 1, wherein the species of the ions and the implantation conditions are such that the layer of microcavities extends to face of the substrate. 3. The method according to claim 1, wherein the substrate comprises a nitride. 4. The method according to claim 3, wherein the substrate comprises gallium nitride. 5. The method according to claim 1, wherein the substrate comprises an arsenide. 6. The method according to claim 5 wherein the substrate comprises gallium arsenide. 7. The method according to claim 1, wherein the substrate comprises hydrogenated amorphous silicon. 8. The method according to claim 1, wherein the substrate comprises diamond. 9. The method according to claim 1, wherein the ions comprise heavy metal ions. 10. The method according to claim 9, wherein the ions comprise one of Au, W, Ag, Si or Cs. 11. The method according to claim 1, wherein the ions comprise Er, Se or Bi. 12. The method according to claim 1, wherein the ions are implanted at a dose from 1012 cm-2 to 1016 cm-2 with an energy from 2 MeV to 40 keV, respectively. 13. The method according to of claim 1, wherein cleaving the substrate comprises applying a heat treatment in the absence of a splitting stress. 14. The method according to claim 1, cleaving the substrate comprises applying a splitting stress by applying a force. 15. The method according to claim 14, wherein applying a splitting stress comprises one or more of inserting a blade between the two substrates, applying further traction, bending, or applying shear forces. 16. The method according to claim 15, wherein applying a splitting stress comprises applying ultrasound or microwaves of appropriate power and frequency. 17. A method of fabricating thin films of semiconductor materials, the method comprising: providing a substrate comprising at least two different elements, wherein at least one of the elements can form a gaseous phase on bonding with itself or with impurities or both; implanting ions having an atomic weight greater than about 20 into a face surface of the substrate, wherein a reaction in the substrate forms a gaseous phase comprising at least one of the at least two different elements of the substrate, the gaseous phase creating microcavities in the substrate and forming a porous layer; bringing the face of the substrate into intimate contact with a stiffener; and cleaving the substrate at the level of the microcavity layer by the application of heat treatment or a splitting stress, or both. 18. The method of claim 17, wherein the substrate comprises a nitride and the gaseous phase comprises nitrogen. 19. The method of claim 17, wherein the substrate comprises a hydride and the gaseous phase comprises hydrogen. 20. The method of claim 17, wherein the substrate comprises a gallium arsenide and the gaseous phase comprises arsine.
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