초록 ▼

A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such ma

A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

대표청구항 ▼

We claim: 1. A method of operating a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising: introducing process gas into said reactor chamber, wherein the method of operation of the reactor is a pla

We claim: 1. A method of operating a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising: introducing process gas into said reactor chamber, wherein the method of operation of the reactor is a platinum etch method, and wherein oxygen and chlorine are present in the reactor; wherein platinum and one or both of the oxygen and the chlorine are deposited on the upper electrode; heating the upper electrode with said heater to a temperature in order to cause deposits of oxygen and chlorine to de-absorb from the upper electrode in order to leave mostly platinum deposited on the electrode, such that a layer of material is formed on the upper electrode; wherein the layer of material formed on the upper electrode is more stable than a layer of material formed when heating the upper electrode with said heater to a temperature insufficient to cause deposits of oxygen and chlorine to de-absorb from the upper electrode. 2. The method of claim 1, wherein the step of heating using the heater that heats the upper electrode comprises heating to a temperature between about 300�� C. to about 500�� C. 3. The method of claim 1, wherein the reactor further comprises at least one side electrode, and a second heater provided in the at least one side electrode that heats said at least one side electrode, and gas inlets and outlets, the method further comprising: heating the at least one side electrode with said second heater such that any material resulting from the reaction deposited on the surface of the at least one side electrode forms a stable layer of material. 4. A method of platinum etch in a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising: introducing process gas into said reactor chamber; and heating the upper electrode with said heater to a temperature in order to cause halogen elements to de-absorb from the upper electrode such that deposits of mostly platinum forms a layer of material; wherein the layer of material formed on the upper electrode is more stable than a layer of material formed when heating the upper electrode with said heater to a temperature insufficient to cause deposits of mostly platinum on the surface of the upper electrode. 5. The method of claim 4, wherein the step of heating using the heater that heats the upper electrode comprises heating to a temperature between about 300�� C. to about 500�� C. 6. The method of claim 4, wherein the reactor further comprises at least one side electrode, and a second heater provided in the at least one side electrode that heats said at least one side electrode, and gas inlets and outlets, the method further comprising: heating the at least one side electrode with said second heater such that any material resulting from the reaction deposited on the surface of the at least one side electrode forms a stable layer of material. 7. The method of claim 4, wherein the step of heating includes heating the surface of the upper electrode with the heater until any volatile compound of platinum collected on the surface of the upper electrode de-absorbs from the surface of the upper electrode. 8. The method of claim 7, wherein the volatile compound of platinum is a compound of platinum with chlorine or oxygen. 9. The method of claim 4, wherein the step of heating includes heating the surface of the upper electrode until any volatile compound of platinum collected on the surface of the upper electrode boils off the surface of the upper electrode. 10. The method of claim 9, wherein the volatile compound of platinum is a compound of platinum with chlorine or oxygen. 11. A method of operating a reactor which comprises a reactor chamber, an upper electrode, a heater that heats said upper electrode, and gas inlets and outlets, the method comprising: introducing process gas into said reactor chamber, the process gas including one or both of oxygen and chlorine; performing a platinum etch process in said reactor chamber; and heating the upper electrode with said heater to a temperature capable of decomposing one or both of platinum chloride and platinum dioxide so that a layer of material formed on the upper electrode during the platinum etch process comprises mostly platinum; and wherein the layer of material formed on the upper electrode is more stable than a layer of material formed when heating the upper electrode with said heater to a temperature insufficient to decompose the one or both of platinum chloride and platinum dioxide. 12. The method of claim 11, wherein the upper electrode comprises aluminum and the upper electrode is heated to a temperature ranging from 300�� C. to 350�� C.