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"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

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Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-023/62    H01L-023/58   
미국특허분류(USC) 257/197; 257/378; 257/462; 257/518; 257/E21.375
출원번호 US-0267473 (2005-11-04)
등록번호 US-7439558 (2008-10-21)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Schwegman, Lundberg & Woessner P.A.
인용정보 피인용 횟수 : 1  인용 특허 : 68
초록
▼

A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also include providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion ...

대표
청구항
▼

I claim: 1. A heterostructure semiconductor device comprising: a compound semiconductive layer including at least two materials selected from silicon, germanium, carbon, gallium, indium, aluminum, arsenic, and phosphorus, a first region having first doping type formed using the compound semiconductive layer; at least one additional semiconductive region having a second doping type opposite of the first doping type; and at least one of the first semiconductive region and the additional semiconductive region including at least one predetermined amount of ...

이 특허에 인용된 특허 (68)

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이 특허를 인용한 특허 피인용횟수: 1

  1. Enicks, Darwin Gene; Carver, Damian. Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization. USP2010017651919.

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