|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||257/197; 257/378; 257/462; 257/518; 257/E21.375|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 1 인용 특허 : 68|
A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region, providing an emitter region coupled with the compound base region, and providing a collector region coupled with the compound base region. The bipolar transistor may also include at least one other predetermined portion. The method and system also include providing at least one predetermined amount of oxygen to at least one of the compound base region, the emitter region, the collector region, and the predetermined portion ...
I claim: 1. A heterostructure semiconductor device comprising: a compound semiconductive layer including at least two materials selected from silicon, germanium, carbon, gallium, indium, aluminum, arsenic, and phosphorus, a first region having first doping type formed using the compound semiconductive layer; at least one additional semiconductive region having a second doping type opposite of the first doping type; and at least one of the first semiconductive region and the additional semiconductive region including at least one predetermined amount of ...