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The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be a

The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.

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What is claimed is: 1. A semiconductor device comprising: a layer including a plurality of elements, wherein one of the plurality of elements comprises crystalline semiconductor film, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the

What is claimed is: 1. A semiconductor device comprising: a layer including a plurality of elements, wherein one of the plurality of elements comprises crystalline semiconductor film, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the layer is capable of being bent at least in a second direction, and wherein the first direction is different from the second direction. 2. The semiconductor device according to claim 1, wherein the plurality of elements is a plurality of thin film transistors. 3. The semiconductor device according to claim 1, wherein the plurality of elements is a plurality of thin film diode. 4. The semiconductor device according to claim 1, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 5. The semiconductor device according to claim 1, wherein the plurality of elements is a plurality of silicon resistor elements. 6. The semiconductor device according to claim 1, wherein the first direction is perpendicular to the second direction. 7. A semiconductor device comprising: a flexible film; and a layer adjacent to the flexible film, including a plurality of elements, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the flexible film is capable of being bent at least in a second direction, wherein the layer is capable of being bent at least in the second direction, and wherein the first direction is different from the second direction. 8. The semiconductor device according to claim 7, wherein the plurality of elements is a plurality of thin film transistors. 9. The semiconductor device according to claim 7, wherein the plurality of elements is a plurality of thin film diode. 10. The semiconductor device according to claim 7, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 11. The semiconductor device according to claim 7, wherein the plurality of elements is a plurality of silicon resistor elements. 12. The semiconductor device according to claim 7, wherein the first direction is perpendicular to the second direction. 13. The semiconductor device according to claim 7, wherein the flexible film is a plastic film. 14. A semiconductor device comprising: a layer including a plurality of elements, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the layer is adjacent to a transfer body, wherein the transfer body has a curved surface which is bent in a second direction, wherein the layer is capable of being bent at least in the second direction, and wherein the first direction is different from the second direction. 15. The semiconductor device according to claim 14, wherein the plurality of elements is a plurality of thin film transistors. 16. The semiconductor device according to claim 14, wherein the plurality of elements is a plurality of thin film diode. 17. The semiconductor device according to claim 14, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 18. The semiconductor device according to claim 14, wherein the plurality of elements is a plurality of silicon resistor elements. 19. The semiconductor device according to claim 14, wherein the first direction is perpendicular to the second direction. 20. A semiconductor device comprising: a layer including: a blocking layer; and a plurality of elements adjacent to the blocking layer, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the layer is capable of being bent at least in a second direction, and wherein the first direction is different from the second direction. 21. The semiconductor device according to claim 20, wherein the plurality of elements is a plurality of thin film transistors. 22. The semiconductor device according to claim 20, wherein the plurality of elements is a plurality of thin film diode. 23. The semiconductor device according to claim 20, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 24. The semiconductor device according to claim 20, wherein the plurality of elements is a plurality of silicon resistor elements. 25. The semiconductor device according to claim 20, wherein the first direction is perpendicular to the second direction. 26. The semiconductor device according to claim 20, wherein the blocking layer comprises at least one of a silicon nitride and a silicon oxynitride. 27. A semiconductor device comprising: a flexible film; and a layer adjacent to the flexible film, including: a blocking layer; and a plurality of elements adjacent to the blocking layer, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the flexible film is capable of being bent at least in a second direction, wherein the layer is capable of being bent at least in the second direction, and wherein the first direction is different from the second direction. 28. The semiconductor device according to claim 27, wherein the plurality of elements is a plurality of thin film transistors. 29. The semiconductor device according to claim 27, wherein the plurality of elements is a plurality of thin film diode. 30. The semiconductor device according to claim 27, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 31. The semiconductor device according to claim 27, wherein the plurality of elements is a plurality of silicon resistor elements. 32. The semiconductor device according to claim 27, wherein the first direction is perpendicular to the second direction. 33. The semiconductor device according to claim 27, wherein the flexible film is a plastic film. 34. The semiconductor device according to claim 27, wherein the blocking layer comprises at least one of a silicon nitride and a silicon oxynitride. 35. A semiconductor device comprising: a layer including: a blocking layer; and a plurality of elements adjacent to the blocking layer, wherein all channel length directions of the plurality of elements are arranged with a first direction, wherein the layer is adjacent to a transfer body, wherein the transfer body has a curved surface which is bent in a second direction, wherein the layer is capable of being bent at least in the second direction, and wherein the first direction is different from the second direction. 36. The semiconductor device according to claim 35, wherein the plurality of elements is a plurality of thin film transistors. 37. The semiconductor device according to claim 35, wherein the plurality of elements is a plurality of thin film diode. 38. The semiconductor device according to claim 35, wherein the plurality of elements is a plurality of photoelectric conversion elements, each of which is made of silicon and has a PIN junction. 39. The semiconductor device according to claim 35, wherein the plurality of elements is a plurality of silicon resistor elements. 40. The semiconductor device according to claim 35, wherein the first direction is perpendicular to the second direction. 41. The semiconductor device according to claim 35, wherein the blocking layer comprises at least one of a silicon nitride and a silicon oxynitride.