초록 ▼

A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating add

A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.

대표청구항 ▼

What is claimed is: 1. A method of planar plating, the method comprising: (a) providing a work piece having a surface with recessed regions and exposed regions; (b) plating metal onto the work piece under conditions that promote bottom-up fill in high aspect ratio features, whereby recessed regions

What is claimed is: 1. A method of planar plating, the method comprising: (a) providing a work piece having a surface with recessed regions and exposed regions; (b) plating metal onto the work piece under conditions that promote bottom-up fill in high aspect ratio features, whereby recessed regions of the work piece having relatively high aspect ratio are filled with metal, while at least some recessed regions having relatively lower aspect ratio are not substantially filled; (c) after (b), causing a plating additive to become attached to the surface selectively in the recessed regions, with relatively little or no plating additive attached to an exposed surface; and (d) after (c) is at least partially complete, plating the metal onto the surface, whereby the additive selectively attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed regions, wherein (c) and (d) are performed during contact with a first solution and during contact with a second solution, respectively, and wherein the first solution comprises a greater concentration of the additive than the second solution, and wherein plating metal in (b) is performed using a plating solution that is different from the first solution. 2. The method of claim 1, wherein the additive is an accelerator, which acts to remove suppression of a suppressing compound and is bound to the surface. 3. The method of claim 2, wherein the accelerator is selected from the group consisting of 2-mercaptoethane-sulfonic acid (MESA), 3-mercapto-2-propane sulfonic acid (MPSA), dimercaptopropionyl sulfonic acid (DMPSA), dimercaptoethane sulfonic acid (DMESA). 4. The method of claim 1, wherein at least some of the recessed regions have an aspect ratio of less than one. 5. The method of claim 1, wherein the work piece is a partially fabricated integrated circuit. 6. The method of claim 5, wherein the recessed regions comprise trenches and/or vias. 7. The method of claim 5, wherein the metal is copper. 8. The method of claim 1, wherein (c) comprises: (i) adsorbing the additive on the work piece surface; and (ii) selectively removing the adsorbed additive from the exposed region. 9. The method of claim 8, wherein (i) comprises contacting the work piece surface with a solution containing an activator. 10. The method of claim 8, wherein (ii) comprises contacting the surface with a pad that selectively removes the adsorbed additive from the exposed region. 11. The method of claim 10, wherein the pad comprises a microrough polymeric material. 12. The method of claim 10, wherein contacting the surface with the pad is performed for a period of time and then stopped prior to (d). 13. The method of claim 10, wherein contacting the surface with the pad is not performed for at least a portion of operation (d). 14. The method of claim 8 wherein (ii) comprises contacting the surface with a lubricating solution and a mechanically rubbing element that selectively removes the adsorbed additive from the exposed region. 15. The method of claim 14, wherein the lubricating solution comprises an oxidizing agent. 16. The method of claim 1, wherein the second solution comprises either a halide and a suppressor or a halide without suppressor. 17. The method of claim 1, wherein the concentration of additive in the second solution is substantially zero. 18. The method of claim 1, further comprising removing the plating additive from exposed regions at least once after the plating in (d) has commenced. 19. The method of claim 18, further comprising applying the additive to the work piece surface during (d) but prior to removing the additive from the exposed regions. 20. The method of claim 1, wherein (d) comprises electroplating the metal onto the surface in a controlled potential mode. 21. The method of claim 1, wherein (d) comprises electroplating the metal onto the surface by controlling current. 22. The method of claim 1, further comprising repeating (c) and (d). 23. The method of claim 1, further comprising: (e) removing metal and barrier material from field regions of the work piece to thereby electrically isolate embedded features of the work piece. 24. The method of claim 23, wherein both (c) and (e) comprise contacting the work piece with a single mechanically rubbing element. 25. The method of claim 1, wherein processes (c) and (d) are performed alternately and simultaneously on different portions of the work piece for periods exceeding about 0.5 seconds. 26. The method of claim 25, wherein (c) comprises: (i) adsorbing the additive on the work piece surface; and (ii) selectively removing the adsorbed additive from the exposed region. 27. The method of claim 1, wherein processes (c) and (d) are performed alternately and simultaneously on different portions of the work piece for periods exceeding about 2 seconds. 28. The method of claim 1, wherein causing the plating additive to become attached to the surface selectively in the recessed regions comprises: (i) contacting the work piece surface with a first solution having an accelerator, which is adsorbed to the point of saturation on the surface; and (ii) selectively removing the accelerator from exposed surfaces while leaving a greater concentration of the accelerator in the recessed regions surface. 29. A method of planar plating, the method comprising: (a) performing a bottom-up fill process on a work piece which results in the work piece having a surface with recessed regions and exposed regions, wherein at least some of the recessed regions have aspect ratios of not greater than about 1; (b) after (a), contacting the work piece surface with a first solution having a plating additive, which binds to the surface, wherein the first solution was not used in (a); (c) selectively removing the additive from exposed surfaces while leaving a greater concentration of the additive in the recessed regions surface; (d) contacting the work piece surface having the additive selectively removed in (c) with a second solution having a lower concentration of the plating additive than is present in the first solution; and (e) plating a metal from the second solution onto the surface, whereby the plating additive in the recessed regions increases the rate of plating in the recessed regions relative to the exposed regions. 30. The method of claim 29, wherein the second solution is substantially free of the plating additive. 31. The method of claim 29, wherein at least some of the recessed regions have aspect ratios of not greater than about 0.5. 32. The method of claim 29, wherein (c) comprises contacting the surface with a lubricating solution and a mechanically rubbing element that selectively removes the adsorbed additive from the exposed region. 33. The method of claim 32, wherein the lubricating solution comprises an oxidizing agent. 34. The method of claim 32, wherein the pad comprises a microrough polymeric material. 35. The method of claim 29, further comprising, prior to (b), plating the metal onto the work piece under conditions that promote bottom-up fill in high aspect ratio features, whereby features of the work piece having relatively high aspect ratio are filled with metal, while features having relatively lower aspect ratio are not substantially filled. 36. The method of claim 29, wherein the second solution comprises either a halide and a suppressor or a halide without suppressor. 37. The method of claim 29, further comprising: (f) removing metal and barrier material from field regions of the work piece to thereby electrically isolate embedded features of the work piece. 38. The method of claim 37, wherein both (c) and (f) comprise contacting the work piece with a single mechanically rubbing element. 39. The method of claim 28, wherein plating the metal onto the surface comprises contacting the work piece surface with a second solution comprising a suppressor and having no accelerator or a lower concentration of the accelerator than is present in the first solution.