초록 ▼

A photoimagable composition suitable for use as a negative photoresist comprising: (A) at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin; (B) at least one polycaprolactone polyol reactive diluent, wherein the amount of component (A) is from about 95% to about 75% by we

A photoimagable composition suitable for use as a negative photoresist comprising: (A) at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin; (B) at least one polycaprolactone polyol reactive diluent, wherein the amount of component (A) is from about 95% to about 75% by weight of the sum of (A) and (B) and the amount of component (B) is from about 5% to about 25% by weight of the sum of (A) and (B); (C) at least one photoacid generator in an amount from about 2.5 to about 12.5 parts per hundred parts of resin and reactive diluent, which initiates polymerization upon exposure to actinic radiation; and (D) a sufficient amount of solvent to dissolve (A), (B) and (C); wherein the solvent comprises 2-pentanone, 3-pentanone, and 1,3-dioxolane and mixtures thereof.

대표청구항 ▼

What is claimed is: 1. A photoimageable composition suitable for use as a negative photoresist comprising: (A) at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin; (B) at least one polycaprolactone polyol reactive diluent, wherein the amount of component (A) is from about

What is claimed is: 1. A photoimageable composition suitable for use as a negative photoresist comprising: (A) at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin; (B) at least one polycaprolactone polyol reactive diluent, wherein the amount of component (A) is from about 95% to about 75% by weight of the sum of (A) and (B) and the amount of component (B) is from about 5% to about 25% by weight of the sum of (A) and (B); (C) at least one photoacid generator in an amount from about 2.5 to about 12.5 parts per hundred parts of resin and reactive diluent, which initiates polymerization upon exposure to actinic radiation; and (D) a sufficient amount of solvent to dissolve (A), (B) and (C); wherein the solvent is selected from the group consisting of 2-pentanone and a mixture of 2-pentanone and 1,3-dioxolane in a weight ratio of from 1:3 to 3:1. 2. The photoimageable composition of claim 1 wherein the novolak resin (A) is an epoxidized polyfunctional bisphenol A formaldehyde novolak resin having an epoxide equivalent weight of about 195 to 230 gram/eq. 3. The photoimageable composition of claim 1 wherein reactive diluent (B) is a difunctional or trifunctional polycaprolactone polyol reactive diluent. 4. The photoimageable composition of claim 1 wherein the photoacid generator (C) is a triaryl sulfonium hexafluoroantimonate salt. 5. The photoimageable composition of claim 1 wherein the solvent (D) is a mixture of 2-pentanone and 1,3-dioxolane in a weight ratio from 2:1 to 1:2. 6. A layer of dry film photoresist composition made by coating a layer of photoresist compositions according to claim 1 onto a substrate and then removing at least some of the solvent from the coated layer, thereby forming a layer of dry film composition on the substrate. 7. A method of forming a dry film photoresist composite comprising the steps of: (1) applying the photoimagable composition of claim 1 to a polymer film substrate; (2) removing at least some of the solvent in the composition by heating the coated substrate thereby forming a substantially dry film of the photoresist composition on the polymer film substrate; and (3) applying a protective cover film to the opposite surface of the substantially dry film, thereby forming a dry film photoresist composite. 8. The method of claim 7 wherein the polymer film substrate selected from the group consisting of polyester film and polyimide film. 9. The method of claim 7 wherein the protective coating is a polyethylene film. 10. A method of forming a permanent photoresist pattern comprising the process steps of: (1) removing the protective coating from the dry film composite made according to claim 7, leaving the dry film layer of photoresist attached to the polymer film substrate; (2) laminating the dry film layer of photoresist to a second substrate; (3) removing the polymer film substrate from the laminated dry film layer of photoresist on the second substrate; (4) imagewise irradiating the coated second substrate with actinic or electron beam radiation; (5) crosslinking the irradiated areas of the dry film layer of photoresist by heating; (6) developing an image in the dry film layer with a solvent, thereby forming a negative relief image in the dry film photoresist layer; and (7) optionally crosslinking the developed relief image by heating. 11. The method of forming a photoresist pattern according to claim 10 where the actinic radiation is ultraviolet rays or X rays. 12. A cured imaged product of the dry film photoresist on the second substrate made according to claim 10. 13. The cured imaged product of claim 12, wherein the image aspect ratio is 1 to 100.