IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0436267
(2006-05-17)
|
등록번호 |
US-7450245
(2008-11-11)
|
발명자
/ 주소 |
- Woods,Gary
- Kasapi,Steven
- Wilsher,Kenneth
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
11 인용 특허 :
65 |
초록
▼
A system for probing a DUT is provided, the system comprising a tunable or CW laser source, a modulator for modulating the output of the laser source, a beam optics designed to point a probing beam at a designated location on the DUT, optical detector for detecting the reflected beam, and collection
A system for probing a DUT is provided, the system comprising a tunable or CW laser source, a modulator for modulating the output of the laser source, a beam optics designed to point a probing beam at a designated location on the DUT, optical detector for detecting the reflected beam, and collection and signal processing electronics. The system deciphers perturbations in the reflected beam by detecting beat frequency between operation frequency of the DUT and frequency of the modulation. In an alternative embodiment, the laser is CW and the modulation is applied to the optical detector.
대표청구항
▼
What is claimed is: 1. A system for testing an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a modulator for imparting modulation to said laser beam; a beam optics receiving said laser beam and focusing said laser beam onto a selected spot on s
What is claimed is: 1. A system for testing an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a modulator for imparting modulation to said laser beam; a beam optics receiving said laser beam and focusing said laser beam onto a selected spot on said microchip; a photosensor receiving reflected laser light that is reflected from said microchip and providing an electrical signal; collection electronics receiving the electrical signal from said photosensor and providing an output signal; an analysis system receiving and analyzing said output signal; wherein said microchip perturbs said laser beam and wherein said analysis system deciphers perturbations in said laser beam by detecting beat frequency between an operation frequency of said microchip and a frequency of the laser beam modulation; and, wherein said photosensor comprises an avalanche photodiode. 2. The system of claim 1, wherein said laser source is a tunable laser source. 3. The system of claim 2, wherein said modulator impart modulation to said laser beam by modulating said tunable laser source. 4. The system of claim 1, wherein said laser source is a CW laser source. 5. The system of claim 4, wherein said modulator impart modulation to said laser beam by optically modulating said laser beam. 6. The system of claim 1, wherein said microchip is operable at a defined frequency and wherein said modulator causes said laser beam to modulate at said defined frequency. 7. The system of claim 6, wherein said modulator causes said laser beam to modulate in phase with said microchip. 8. The system of claim 6, wherein said modulator causes said laser beam to modulate out of phase with said microchip. 9. The system of claim 6, wherein said photosensor has a defined bandwidth and said defined frequency is higher than the defined bandwidth. 10. A system for testing an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a modulator for imparting modulation to said laser beam; a beam optics receiving said laser beam and focusing said laser beam onto a selected spot on said microchip; a photosensor receiving reflected laser light that is reflected from said microchip and providing an electrical signal; collection electronics receiving the electrical signal from said photosensor and providing an output signal; an analysis system receiving and analyzing said output signal; and, wherein said beam optics comprises a laser scanning microscope (LSM). 11. The system of claim 10, wherein said LSM is operable in a scanning mode and in a beam pointing mode. 12. The system of claim 10, wherein said beam optics comprises a first polarizer beam splitter positioned upstream of said Faraday rotator and a second polarized beam splitter positioned between said Faraday Rotator and said optical retarder. 13. The system of claim 12, further comprising a second photosensor receiving light deflected from said second polarized beam splitter. 14. The system of claim 13, wherein said beam optics further comprises a solid immersion lens. 15. The system of claim 13, wherein said photosensor and said second photosensor comprise first and second avalanche photodiodes (APD's), respectively. 16. The system of claim 15, wherein said first and second APD's are coupled to a controllable variable power supply. 17. The system of claim 16, further comprising a first and second current monitors coupled to said first and second APD's, respectively. 18. The system of claim 17, further comprising a video amplifier coupled to at least one of said first and second APD's. 19. The system of claim 15, further comprising a signal amplifier system providing an amplified electrical signal corresponding to output signals of said first and second APD's. 20. A system for testing an integrated circuit microchip using laser probing, comprising: a laser source providing a laser beam; a modulator for imparting modulation to said laser beam; a beam optics receiving said laser beam and focusing said laser beam onto a selected spot on said microchip; a photosensor receiving reflected laser light that is reflected from said microchip and providing an electrical signal; collection electronics receiving the electrical signal from said photosensor and providing an output signal; an analysis system receiving and analyzing said output signal; and, wherein said modulator causes the intensity of said laser beam to be modulated in a form of a sine wave. 21. The system of claim 20, wherein said sine wave is of a frequency equivalent to operation frequency of said microchip. 22. A method for probing an integrated circuit microchip operable at a defined frequency and phase, comprising: generating a modular laser beam: pointing said modulated laser beam onto a selected area of said microchip: collecting reflected beam reflected from the area of said microchip; analyzing said reflected beam to decipher perturbation cause by said microchip by detecting beat frequency between operation frequency of said microchip and frequency of the modulated laser beam; and wherein said generating a modulated laser beam comprises generating sinusoidal-shaped modulated laser beam. 23. The method of claim 22, wherein said sinusoidal-shaped modulated laser beam is generated at a frequency equivalent to the operational frequency of said microchip. 24. The system of claim 22, wherein said generating a modulated laser beam comprises generating a CW laser beam and modulating the intensity of said CW laser beam. 25. A method of claim 22, wherein said generating a modulated laser beam comprises applying a modulator to a tunable laser source. 26. A system for testing an integrated circuit microchip using laser probing, comprising: a laser source providing a continuous laser beam; a beam optics receiving said laser beam and focusing said laser beam onto a selected spot on said microchip; a photosensor receiving reflected laser light that is reflected from said microchip and providing an electrical signal; a modulator for modulating said photosensor; collection electronics receiving the electrical signal from said photosensor and providing an output signal; an analysis system receiving and analyzing said output signal. 27. The system of claim 26, wherein said photosensor is an APD and said modulator modulates the gain of said APD. 28. The system of claim 27, wherein said microchip is operable at a defined frequency and wherein said modulator modulates the gain of said APD at said defined frequency. 29. The system of claim 27, wherein said modulator modulates the gain of said APD in phase with said microchip. 30. The system of claim 27, wherein said modulator modulates the gain of said APD out of phase with said microchip. 31. The system of claim 28, wherein said APD has a defined bandwidth and said defined frequency is higher than the defined bandwidth. 32. The system of claim 27, wherein said microchip perturbs said laser beam and wherein said analysis system deciphers perturbations in said laser beam by detecting beat frequency between operation frequency of said microchip and frequency of the APD gain modulation.
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