초록 ▼

The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide glob

The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

대표청구항 ▼

We claim: 1. A method of forming a microelectronic precursor, said method comprising the steps of: (a) providing a substrate having a surface and including a plurality of topography features on said surface; (b) forming a planarizing layer on said surface, said planarizing layer comprising a compou

We claim: 1. A method of forming a microelectronic precursor, said method comprising the steps of: (a) providing a substrate having a surface and including a plurality of topography features on said surface; (b) forming a planarizing layer on said surface, said planarizing layer comprising a compound selected from the group consisting of polymers, monomers, oligomers, or mixtures thereof of the following: epoxies, acrylates, vinyl ethers, polyesters, polyimides, and vinyl-containing compounds and mixtures of the foregoing; (c) contacting the planarizing layer with a flat surface of an object for sufficient time, pressure, and temperature to transfer the flatness of the flat surface to the planarizing layer, curing or hardening said planarizing layer during or after said contacting, said flattened cured or hardened planarizing layer presenting a globally planar surface ready for the application of subsequent layers; (d) optionally forming one or more intermediate layers on said globally planar surface of said planarizing layer; (e) forming an imaging layer to yield the microelectronic precursor, said imaging layer being formed on said intermediate layers if present or on said planarizing layer if no intermediate layers are present, said layer-forming steps (d) and (e) being carried out without alteration of said globally planar surface of said planarizing layer; (f) creating a pattern on said imaging layer; and (g) transferring said pattern to said intermediate layers, if present, and to said planarizing layer, wherein after said transferring step said substrate surface retains at least a portion of its original topography. 2. The method of claim 1, said planarizing layer further comprising an ingredient selected from the group consisting of acids, acid generators, bases, base generators, surfactants, photo-initiators, thermo-initiators, and mixtures thereof. 3. The method of claim 1, wherein said curing or hardening step comprises subjecting said planarizing layer to UV light for sufficient time to substantially cure said composition. 4. The method of claim 1, wherein said curing or hardening step comprises heating said planarizing layer for a sufficient time and temperature to substantially harden said planarizing layer. 5. The method of claim 4, wherein said curing or hardening step comprises cooling said planarizing layer to below about its Tg. 6. The method of claim 4, wherein said heating comprises using a radiant heat source to heat said planarizing layer. 7. The method of claim 4, wherein said heating comprises using IR heat to heat said planarizing layer. 8. The method of claim 1, wherein said flattening of step (c) is carried out under ambient pressures. 9. The method of claim 1, wherein said flattening of step (c) is carried out under vacuum. 10. The method of claim 1, wherein said flattening of step (c) is carried out at elevated pressures. 11. The method of claim 1, wherein said flattening of step (c) is carried out under an artificial atmosphere. 12. The method of claim 1, wherein said contacting step is carried out with a pressure application of from about 1-1,000 psi. 13. The method of claim 1, wherein said contacting step is carried out at a temperature of from about ambient temperatures to about 350�� C. 14. The method of claim 1, wherein said contacting step is carried out for a time period of from about 1 second to about 120 minutes. 15. The method of claim 1, wherein one or more intermediate layers is present, and each intermediate layer is essentially metal-free. 16. The method of claim 1, wherein: said imaging layer comprises a photoresist layer; said creating step comprises selectively exposing portions of said photoresist layer to UV light; and said transferring step comprises developing said photoresist layer, said intermediate layers, if present, and said planarizing layer. 17. The method of claim 1, wherein: said imaging layer comprises an imprint layer; said creating step comprises contacting a negative with said imprint layer, said negative having an impression surface which comprises a negative of the pattern; and said transferring step comprises etching said pattern through said intermediate layers, if present, and said planarizing layer. 18. The method of claim 1, wherein: said imaging layer comprises a stamped pattern; and said transferring step comprises etching said pattern through said intermediate layers, if present, and said planarizing layer. 19. The method of claim 1, further including the step of repeating at least some of steps (a)-(g) on said microelectronic precursor. 20. The method of claim 1, wherein at least one intermediate layer is present, said intermediate layer being selected from the group consisting of mask layers, barrier layers, and anti-reflective layers. 21. The method of claim 1, wherein step (c) results in a planarizing layer having a topography over any individual substrate topography feature of less than about 250 Å. 22. The method of claim 1, wherein step (c) results in a planarizing layer having a topography of less than about 600 Å over a substrate surface length of about 10,000 μm where at least two different feature density areas are present over said substrate surface length. 23. The method of claim 1, wherein step (c) results in a planarizing layer having an average thickness a 0.1-10 μm. 24. The method of claim 1, wherein said object comprises an optical flat. 25. A method of forming a microelectronic precursor, said method comprising the steps of: (a) providing a substrate having a surface and including a plurality of topography features on said surface; (b) forming a planarizing layer on said surface, said planarizing layer comprising a compound selected from the group consisting of polymers, monomers, oligomers, or mixtures thereof of the following: epoxies, acrylatetcs, vinyl ethers, polyesters, polyimides, and vinyl-containing compounds, and mixtures of the foregoing; (c) contacting the planarizing layer with a flat surface of an object for sufficient time, pressure, and temperature to transfer the flatness of the flat surface to the planarizing layer, curing or hardening said planarizing layer during or after said contacting, said flattened cured or hardened planarizing layer presenting a globally planar surface ready for the application of subsequent layers; (d) optionally forming one or more intermediate layers on said globally planar surface of said planarizing layer, said intermediate layers being essentially metal-free; and (e) forming an imaging layer to yield the microelectronic precursor, said imaging layer being formed on said intermediate layers if present or on said planarizing layer if no intermediate layers are present, said layer-forming steps (d) and (e) being carried out without alteration of said globally planar surface of said planarizing layer. 26. The method of claim 25, wherein step (c) results in a planarizing layer having an average thickness of from about 0.1-10 μm. 27. The method of claim 25, wherein said object comprises an optical flat. 28. A method of forming a microelectronic precursor, said method comprising the steps of: (a) providing a substrate having a surface and including a plurality of topography features on said surface; (b) forming a planarizing layer on said surface, said planarizing layer comprising a compound selected from the group consisting of polymers, monomers, oligorners, or mixtures thereof of the following: epoxies, acrylates, vinyl ethers, polyesters, polyimides, and vinyl-containing compounds, and mixtures of the foregoing; (c) contacting the planarizing layer with a flat surface of an object for sufficient time, pressure, and temperature to transfer the flatness of the flat surface to the planarizing layer, curing or hardening said planarizing layer during or after said contacting, said flattened cured or hardened planarizing layer presenting a globally planar surface ready for the application of subsequent layers; (d) optionally forming one or more intermediate layers on said globally planar surface of said planarizing layer; and (e) forming an imaging layer to yield the microelectronic precursor, said imaging layer being formed on said intermediate layers if present or on said planarizing layer if no intermediate layers are present, said layer forming steps (d) and (e) being carried out without alteration of said globally planar surface of said planarizing layer. 29. The method of claim 28, wherein step (c) results in a planarizing layer having an average thickness of from about 0.1-10 μm. 30. The method of claim 28, wherein said object comprises an optical flat.