초록 ▼

A technique is described in which a layer to be transferred is easily peeled and transferred to a transferred body that is pliable or flexible. Also, a method of fabricating a semiconductor device using these peeling and transfer techniques, and electronic equipment fabricated with the semiconductor

A technique is described in which a layer to be transferred is easily peeled and transferred to a transferred body that is pliable or flexible. Also, a method of fabricating a semiconductor device using these peeling and transfer techniques, and electronic equipment fabricated with the semiconductor device is described. A transfer method in which a layer to be transferred formed on a substrate is transferred to a transfer body that is pliable or flexible includes the first step of forming a layer to be transferred on a substrate; the second step of bonding the layer to be transferred formed on the substrate to a transfer body that is pliable or flexible fixed on a fixture; and the third step of peeling the layer to be transferred from the substrate and transferring the layer to be transferred to the transfer body.

대표청구항 ▼

What is claimed is: 1. A transfer method, the method comprising: forming a separating layer on a substrate; forming a first layer and a second layer on the separating layer; and transferring the first layer and the second layer to a plurality of transfer bodies such that the first layer and the sec

What is claimed is: 1. A transfer method, the method comprising: forming a separating layer on a substrate; forming a first layer and a second layer on the separating layer; and transferring the first layer and the second layer to a plurality of transfer bodies such that the first layer and the second layer are divided into a plurality of portions, each portion disposed on a single corresponding one of the plurality of transfer bodies. 2. The transfer method according to claim 1, the first layer and the second layer are divided into the plurality of portions by using first grooves that have been formed at boundaries of the plurality of portions in the first layer and second grooves that have been formed at the boundaries in the second layer. 3. The transfer method according to claim 1, the second layer facing to the transfer body, and the second layer being flexible. 4. The transfer method according to claim 1, the first layer including a thin film element. 5. The transfer method according to claim 1, the second layer facing to the transfer body, and the second layer having pliability and flexibility. 6. A method of fabricating a semiconductor device using the transfer method according to claim 1. 7. An electronic equipment comprising the semiconductor device fabricated using the method according to claim 6. 8. The transfer method according to claim 1, further comprising bonding the first layer to the second layer. 9. The transfer method according to claim 8, each of the plurality of portions including a part of the first layer and a part of the second layer. 10. A transfer method comprising: bonding a first layer including a thin film element to a second layer; dividing the first layer and the second layer into a plurality of portions each of which includes a part of the first layer and a part of the second layer; and transferring the first and the second layer to a plurality of transfer bodies such that the first layer and the second layer are divided into a plurality of portions, each portion disposed on a single corresponding one of the plurality of transfer bodies. 11. A transfer method according to claim 10, the second layer being flexible. 12. A method fabricating a semiconductor device using the transfer method according to claim 10. 13. A method fabricating a semiconductor device comprising: bonding a first layer including a thin film element to a second layer; dividing the first layer and the second layer into a plurality of portions each of which includes a part of the first layer and a part of the second layer; and transferring the first and the second layer to a plurality of transfer bodies such that the first layer and the second layer are divided into a plurality of portions, each portion disposed on a single corresponding one of the plurality of transfer bodies. 14. Electro-optical equipment comprising the semiconductor device fabricated by using the method according to claim 12. 15. The method according to claim 10 further comprising disposing the first layer and the second layer on the transfer bodies before the dividing of the first layer and the second layer into the plurality of portions. 16. The method according to claim 10, the bonding of the first layer to the second layer by using an adhesive material.