Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/00
H01L-031/0312
H01L-031/0264
출원번호
US-0784903
(2004-02-20)
등록번호
US-7459763
(2008-12-02)
발명자
/ 주소
Issaq,A. Farid
Hawley,Frank
McCollum,John
출원인 / 주소
Actel Corporation
대리인 / 주소
Lewis and Roca LLP
인용정보
피인용 횟수 :
91인용 특허 :
41
초록▼
A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at l
A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine is disposed over the lower adhesion-promoting layer. An upper adhesion-promoting layer is disposed over the antifuse material layer. An upper Ti barrier layer is disposed over the upper adhesion-promoting layer.
대표청구항▼
What is claimed is: 1. A reprogrammable metal-to-metal antifuse comprising: an inter-metal dielectric layer having a via formed therethrough and filled with a metal plug; a lower Ti barrier layer disposed over said metal plug; a lower adhesion-promoting layer disposed over said lower Ti barrier lay
What is claimed is: 1. A reprogrammable metal-to-metal antifuse comprising: an inter-metal dielectric layer having a via formed therethrough and filled with a metal plug; a lower Ti barrier layer disposed over said metal plug; a lower adhesion-promoting layer disposed over said lower Ti barrier layer; an antifuse material layer disposed above an upper surface of said lower adhesion-promoting layer, said antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine disposed over said lower adhesion-promoting layer; an upper adhesion-promoting layer disposed over said antifuse material layer; and an upper Ti barrier layer disposed over said upper adhesion-promoting layer, wherein: said lower adhesion-promoting layer and said upper adhesion-promoting layer each have a thickness of between about 2 angstroms and about 20 angstroms; the reprogrammable metal-to-metal antifuse is programmed in response to a programming potential applied across the antifuse; and the reprogrammable metal-to-metal antifuse is erased in response to an erasing potential, lower in magnitude than the programming potential, across the antifuse. 2. The reprogrammable metal-to-metal antifuse of claim 1, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer are comprised of a material selected from the group comprising SixCy and SixNy. 3. The reprogrammable metal-to-metal antifuse of claim 2, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixCy. 4. The reprogrammable metal-to-metal antifuse of claim 3, wherein a ratio of x to y in said SixCy is in a range of about 1+/-0.4. 5. The reprogrammable metal-to-metal antifuse of claim 2, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixNy. 6. The reprogrammable metal-to-metal antifuse of claim 5, wherein a ratio of x to y in said SixNy is in a range of about 0.75+/-0.225. 7. The reprogrammable metal-to-metal antifuse of claim 1, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer are from a material selected from the group comprising SixCy and SixNy. 8. The reprogrammable metal-to-metal antifuse of claim 7, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixCy. 9. The reprogrammable metal-to-metal antifuse of claim 8, wherein a ratio of x to y in said SixCy is in a range of about 1+/-0.4. 10. The reprogrammable metal-to-metal antifuse of claim 7, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixNy. 11. The reprogrammable metal-to-metal antifuse of claim 7, wherein a ratio of x to y in said SixNy is in a range of about 0.75+/-0.225. 12. The reprogrammable metal-to-metal antifuse of claim 1, wherein said antifuse material layer is formed from amorphous carbon having a thickness of between about 50 angstroms and about 500 angstroms. 13. The reprogrammable metal-to-metal antifuse of claim 1, wherein said antifuse material layer comprises amorphous carbon doped with hydrogen in a concentration range of about 1 atomic percent to about 40 atomic percent. 14. The reprogrammable metal-to-metal antifuse of claim 13, wherein said antifuse material layer has a thickness of between about 50 angstroms and about 500 angstroms. 15. The reprogrammable metal-to-metal antifuse of claim 1, wherein said antifuse material layer is about 50 angstroms to 500 angstroms in thickness, and said lower adhesion-promoting layer and said upper adhesion-promoting layer each have a thickness of between about 2 angstroms and about 20 angstroms. 16. The reprogrammable metal-to-metal antifuse in claim 15, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer are from a material selected from the group comprising SixCy and SixNy. 17. The reprogrammable metal-to-metal antifuse of claim 16, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixCy. 18. The reprogrammable metal-to-metal antifuse of claim 17, wherein a ratio of x to y in said SixCy is in a range of about 1+/-0.4. 19. The reprogrammable metal-to-metal antifuse of claim 16, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixNy. 20. The reprogrammable metal-to-metal antifuse of claim 19, wherein a ratio of x to y in said SixNy is in a range of about 0.75+/-0.225. 21. The reprogrammable metal-to-metal antifuse of claim 16, wherein said amorphous carbon antifuse material layer is doped with hydrogen from about 1 atomic percent to about 40 atomic percent. 22. A reprogrammable metal-to-metal antifuse comprising: a lower metal interconnect layer; an inter-metal dielectric layer disposed over said lower metal interconnect layer, said inter-metal dielectric layer having a via formed therethrough and filled with a metal plug; a lower Ti barrier layer disposed over said metal plug; a lower adhesion-promoting layer disposed over said lower Ti barrier layer; an antifuse material layer formed from amorphous carbon and disposed over said lower adhesion-promoting layer; an upper adhesion-promoting layer disposed over said antifuse material layer; an upper Ti barrier layer disposed over said upper adhesion-promoting layer; and an upper metal interconnect layer disposed over said upper Ti barrier layer, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer each have a thickness of between about 2 angstroms and about 20 angstroms; the reprogrammable metal-to-metal antifuse is programmed in response to a programming potential applied across the antifuse; and the reprogrammable metal-to-metal antifuse is erased in response to an erasing potential, lower in magnitude than the programming potential, across the antifuse. 23. The reprogrammable metal-to-metal antifuse of claim 22, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer are comprised of a material selected from the group comprising SixCy and SixNy. 24. The reprogrammable metal-to-metal antifuse of claim 23, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixCy. 25. The reprogrammable metal-to-metal antifuse of claim 24, wherein a ratio of x to y in said SixCy is in a range of about 1+/-0.4. 26. The reprogrammable metal-to-metal antifuse of claim 23, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer comprise SixNy. 27. The reprogrammable metal-to-metal antifuse of claim 26, wherein a ratio of x to y in said SixNy is in a range of about 0.75+/-0.225. 28. The reprogrammable metal-to-metal antifuse of claim 22, wherein said antifuse material layer has a thickness of between about 50 angstroms and about 500 angstroms. 29. The reprogrammable metal-to-metal antifuse of claim 22, wherein said amorphous carbon antifuse material layer is doped with hydrogen in a concentration range of about 1 atomic percent to about 40 atomic percent. 30. The reprogrammable metal-to-metal antifuse of claim 29, wherein said amorphous carbon antifuse material layer has a thickness of between about 50 angstroms and about 500 angstroms. 31. The reprogrammable metal-to-metal antifuse of claim 22, wherein said lower adhesion-promoting layer and said upper adhesion-promoting layer are comprised of a material selected from the group comprising SixCy, SixNy, SixCyNz, SixOyCz, and SixOyNz. 32. A reprogrammable metal-to-metal antifuse comprising: an inter-metal dielectric layer having a via formed therethrough and filled with a metal plug; a lower Ti barrier layer disposed over said metal plug; a lower SixCy layer disposed over said lower Ti barrier layer; an antifuse material layer comprised of amorphous carbon and disposed over said lower SixCy layer; an upper SixCy layer disposed over said antifuse material layer; and an upper Ti barrier layer, wherein said lower SixCy layer and said upper SixCy layer each have a thickness of between about 2 angstroms and about 20 angstroms; the reprogrammable metal-to-metal antifuse is programmed in response to a programming potential applied across the antifuse; and the reprogrammable metal-to-metal antifuse is erased in response to an erasing potential, lower in magnitude than the programming potential, across the antifuse. 33. A reprogrammable metal-to-metal antifuse comprising: an inter-metal dielectric layer having a via formed therethrough and filled with a metal plug; a lower Ti barrier layer disposed over said metal plug; a lower SixNy layer disposed over said lower Ti barrier layer; an antifuse material layer comprised of amorphous carbon and disposed over said lower SixNy layer; an upper SixNy layer disposed over said antifuse material layer; and an upper Ti barrier layer, wherein said lower SixNy layer and said upper SixNy layer each have a thickness of between about 2 angstroms and about 20 angstroms; the reprogrammable metal-to-metal antifuse is programmed in response to a programming potential applied across the antifuse; and the reprogrammable metal-to-metal antifuse is erased in response to an erasing potential, lower in magnitude than the programming potential, across the antifuse.
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이 특허에 인용된 특허 (41)
Hawley Frank W. (Campbell CA) Yen Yeouchung (San Jose CA), Above via metal-to-metal antifuse.
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McCollum John L. (Saratoga CA) Chen Shih-Ou (Fremont CA), Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer.
Forouhi Abdul R. (San Jose CA) McCollum John L. (Saratoga CA) Chen Shih-Oh (Fremont CA), Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer.
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Chiang Steve S. (Saratoga CA) Elashmawi Esam (San Jose CA) Speers Theodore M. (San Leandro CA) Winemberg LeRoy (Fremont CA), Methods of reducing anti-fuse resistance during programming.
Yang, Hongning; Nguyen, Tue, Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon.
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