Quantum well design for a coherent, single-photon detector with spin resonant transistor
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/06
H01L-029/02
출원번호
US-0542322
(2006-10-02)
등록번호
US-7462859
(2008-12-09)
발명자
/ 주소
Croke, III,Edward T.
Gyure,Mark F.
출원인 / 주소
HRL Laboratories, LLC
대리인 / 주소
Ladas & Parry
인용정보
피인용 횟수 :
0인용 특허 :
3
초록▼
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation electrode for defining, when negatively energized, an extent of the quantum well in the body and a secon
A spin coherent, single photon detector has a body of semiconductor material with a quantum well region formed in barrier material in the body. The body has a first electrode forming an isolation electrode for defining, when negatively energized, an extent of the quantum well in the body and a second electrode positioned above a location where an electrostatic quantum dot is defined in said quantum well when positively energized. The quantum well occurs in three layers of material: a central quantum well layer and two outer quantum well layers, the two outer quantum well layers having a relatively low conduction band minimum and the barrier having a relatively high conduction band minimum while the central quantum well layer having a conduction band minimum between the relatively high and relatively low conduction band minimums.
대표청구항▼
What is claimed is: 1. A photon detector comprising a body of semiconductor material having a quantum well region disposed in barrier material in said body, said body having first and second electrodes formed thereon, the first electrode forming an isolation electrode for defining, when negatively
What is claimed is: 1. A photon detector comprising a body of semiconductor material having a quantum well region disposed in barrier material in said body, said body having first and second electrodes formed thereon, the first electrode forming an isolation electrode for defining, when negatively energized, an extent of a quantum well in said body and the second electrode being positioned above a location where an electrostatic quantum dot is defined in said quantum well in response to positive energization of said second electrode, the quantum well occurring in a quantum well region defined by at least three layers of material including: (i) a central layer at least partially disposed within the quantum well, and (ii) two outer layers also at least partially disposed within the quantum well, the two outer layers of the quantum well region having a relatively low conduction band minimum compared the barrier material which has a relatively high conduction band minimum, the central layer having a conduction band minimum between the relatively high conduction band minimum of the barrier material and relatively low conduction band minimum of the two outer layers, and wherein an effective, weighted g-factor for the detector is sufficiently close to zero that the Zeeman energy is less than a linewidth, expressed in terms of energy, of photons to be detected by the detector, the central layer and the two outer layers being sufficiently thin that only a single, common quantum well occurs with respect to said quantum dot. 2. The photon detector of claim 1 wherein said central layer comprises InP and two outer layers comprise InGaAs. 3. The photon detector of claim 2 wherein the outer layers of InGaAs are lattice-matched to InP. 4. The photon detector of claim 1 wherein the barrier material comprises AlInAs. 5. The photon detector of claim 4 wherein the barrier material AlInAs is lattice-matched to InP. 6. The photon detector of claim 1 wherein the barrier material is disposed on a substrate of InP, the barrier material is AlInAs lattice-matched to InP and the outer layers are InGaAs lattice-matched to InP. 7. The photon detector of claim 1 wherein the first electrode has a circular configuration. 8. The photon detector of claim 1 wherein the first electrode has an annular configuration. 9. The photon detector of claim 1 wherein the outer layers are disposed immediately adjacent and in contact with said central layer. 10. A photon detector comprising a body of semiconductor material having a quantum well region formed in barrier material comprising AlInAs in said body, said body having first and second electrodes formed thereon, the first electrode forming an isolation electrode for defining, when negatively energized, an extent of a quantum well in said body and the second electrode being positioned above a location where an electrostatic quantum dot occurs in said quantum well region in response to positive energization of said second electrode, the quantum well region including in at least three layers of material comprising a central layer formed of InP and two outer layers each formed of InGaAs. 11. The photon detector of claim 10 wherein the barrier material is disposed on a substrate of InP. 12. The photon detector of claim 10 wherein the outermost layers of InGaAs are lattice-matched to InP. 13. The photon detector of claim 12 wherein the barrier material AlInAs is also lattice-matched in InP. 14. The photon detector of claim 10 wherein the first electrode has a circular configuration. 15. A method of using the photon detector of claim 10 wherein, in use, a voltage greater than minus five volts, but less than zero volts, is impressed on said first electrode. 16. The photon detector of claim 10 wherein the outer layers are disposed immediately adjacent and in contact with said central layer. 17. A method of detecting a single photon in a spin coherent manner, the method comprising the steps of: forming a body of semiconductor material having a quantum well region disposed in barrier material in said body, the quantum well occurring in a quantum well region defined by at least three layers of material including: (i) a central layer at least partially disposed within the quantum well region, and (ii) two outer layers also at least partially disposed within the quantum well region, the two outer layers of the quantum well region having a relatively low conduction band minimum compared the barrier material which has a relatively high conduction band minimum, the central layer having a conduction band minimum between the relatively high conduction band minimum of the barrier material and relatively low conduction band minimum of the two outer layers, and wherein an effective, weighted g-factor for the detector is sufficiently close to zero that the Zeeman energy is less than a linewidth, expressed in terms of energy, of photons to be detected by the detector; forming a quantum well and electrostatic quantum dot in said quantum well region, wherein the central layer and the two outer layers in the quantum well region being sufficiently thin that such that said quantum well occurs as a single, common quantum well in said quantum well region whereby an incident photon creates an electron-hole pair in said single, common quantum well; and applying a magnetic field to said quantum well region such that the incident photon creates said electron with spin coherency. 18. The photon detector of claim 1 wherein the photon detector exhibits spin coherency in detection of a single photon when a magnetic field is applied to said quantum well region such that the single photon creates an electron of an electron-hole pair with spin coherency in said magnetic field.
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이 특허에 인용된 특허 (3)
Kim, Gyung Ock; Kim, In Kyu; Pyun, Kwang Eui, Avalanche photodetector.
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