Indented structure for encapsulated devices and method of manufacture
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/12
H01L-023/48
출원번호
US-0433435
(2006-05-15)
등록번호
US-7462931
(2008-12-09)
발명자
/ 주소
Summers,Jeffery F.
출원인 / 주소
Innovative Micro Technology
대리인 / 주소
Spong,Jaquelin K.
인용정보
피인용 횟수 :
7인용 특허 :
9
초록▼
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features i
A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.
대표청구항▼
What is claimed is: 1. An encapsulated device, comprising: a cavity defined by two surfaces of two substrates bonded together with a bonding material that includes an adhesive substance with embedded rigid particles, and wherein the adhesive substance is at least one of a glass frit and an alloy of
What is claimed is: 1. An encapsulated device, comprising: a cavity defined by two surfaces of two substrates bonded together with a bonding material that includes an adhesive substance with embedded rigid particles, and wherein the adhesive substance is at least one of a glass frit and an alloy of gold and indium, and the embedded rigid particles are sapphire spheres of about 10 μm diameter, and wherein the embedded rigid particles define a minimum separation between the substrates, and wherein this separation defines the cavity enclosing the device; a device formed on one of the substrates, the substrates being bonded such that the cavity encapsulates the device, at least one indentation feature formed on at least one of the two surfaces of the cavity; and a getter material formed over the at least one indentation feature. 2. The indented structure of claim 1, wherein the at least one indentation feature comprises at least one of a blind hole, a groove, a post and a trench, and wherein a characteristic dimension of the at least one indentation feature is at least about ten times smaller than a width of the device cavity. 3. The indented structure of claim 2, wherein the at least one indentation feature comprises a plurality of blind holes with an aspect ratio of about 2 to 1. 4. The indented structure of claim 3, wherein the blind holes have a diameter of between about 5 microns and 10 microns, and a depth of about 8 microns to about 20 microns. 5. The indented structure of claim 1, wherein at least one substrate comprises a substantially flat wafer of at least one of glass, Kovar, Invar, silicon, metal, and ceramic. 6. An encapsulated device, comprising: a cavity defined by two surfaces of two substrates bonded together; a device formed on one of two substrates, the substrates being bonded such that the cavity encapsulates the device; a bonding material which bonds the substrates, wherein the bonding material includes an adhesive substance with embedded rigid particles, and wherein the embedded rigid particles define a minimum separation between the substrates to define the cavity; at least one indentation feature formed on at least one of the two surfaces of the cavity; and a getter material formed over the at least one indentation feature. 7. The encapsulated device of claim 6, wherein the layer of getter material comprises at least one of zirconium, titanium, vanadium, niobium, tantalum and iron, and is between about 0.5 μm and about 3 μm thick. 8. The encapsulated device of claim 6, wherein the device comprises at least one of a MEMS actuator, a MEMS sensor, and an infrared device and an integrated circuit. 9. The encapsulated device of claim 8, wherein the device is formed on a device wafer comprising at least one of silicon, gallium arsenide, glass, quartz, ceramic and metal, and the other wafer is a substantially flat lid wafer comprising at least one of glass, Kovar, Invar, silicon, metal, and ceramic, and wherein the lid wafer comprises an otherwise flat surface in which the at least one indentation feature is formed. 10. The encapsulated device of claim 9, wherein the lid wafer is hermetically bonded to the device wafer and the cavity contains at least one of sulfur hexafluoride (SF6), helium (He), nitrogen (N2), argon (Ar), neon (Ne), vacuum, partial vacuum and high pressure. 11. An encapsulated device, comprising: a device formed on one of two substrates; a cavity providing clearance for the device and enclosing the device, and formed by only two substantially parallel surfaces of two substrates bonded together with a bonding material that includes an adhesive substance with embedded rigid particles, and wherein the adhesive substance is at least one of a glass frit and a metal alloy, and wherein the embedded rigid particles are substantially spherical non-conducting particles of at least about 10 μm diameter, and wherein the embedded rigid particles define the separation between the two surfaces forming the cavity; a plurality of indentation features formed on at least one of the two surfaces of the cavity; and a getter material formed over the plurality of indentation features. 12. The encapsulate device of claim 11, wherein the separation defined by the rigid particles alone forms the cavity enclosing the device and provides clearance for the device. 13. The encapsulated device of claim 11, wherein the adhesive substance comprises a at least one of glass frit and a metal alloy. 14. The encapsulated device of claim 11, wherein the adhesive substance comprises AuInx, wherein x is about 2. 15. The encapsulated device of claim 11, wherein the embedded particles comprise at least one of alumina, silica, diamond, glass and sapphire spheres of at least about 10 μm diameter, providing a cavity with a clearance of at least about 10 μm. 16. The encapsulated device of claim 11, wherein a top and bottom of the cavity is formed by the flat surface of the lid wafer and the surface of the device wafer on which the device is formed, and the sides of the cavity are formed by the bonding material.
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