초록 ▼

A sensorless protection circuit comprises a detection module. The detection module receives a reference voltage signal and receives a load voltage signal from a MOSFET. The detection module generates a detection signal having a first state and a second state according to the reference voltage signal

A sensorless protection circuit comprises a detection module. The detection module receives a reference voltage signal and receives a load voltage signal from a MOSFET. The detection module generates a detection signal having a first state and a second state according to the reference voltage signal and the load voltage signal. A protection module receives the detection signal and maintains the MOSFET in an ON state when the detection signal is in the first state and transitions the MOSFET from the ON state to an OFF state when the detection signal is in the second state. The detection signal is in the second state when the MOSFET is in at least one of a current overload condition, an over temperature condition, a startup inrush current condition, and a short circuit condition.

대표청구항 ▼

What is claimed is: 1. A protection circuit comprising: a detection module that receives a first reference voltage signal and receives a load voltage signal from a MOSFET, and that generates a detection signal having a first state and a second state according to the first reference voltage signal a

What is claimed is: 1. A protection circuit comprising: a detection module that receives a first reference voltage signal and receives a load voltage signal from a MOSFET, and that generates a detection signal having a first state and a second state according to the first reference voltage signal and the load voltage signal; and a protection module that receives the detection signal and maintains the MOSFET in an ON state when the detection signal is in the first state and transitions the MOSFET from the ON state to an OFF state when the detection signal is in the second state, wherein the MOSFET does not include a current sensor and does not include a temperature sensor, the detection signal is in the second state when the MOSFET is in at least one of a current overload condition and a short circuit condition, and the detection signal is in the second state when the MOSFET is in an over temperature condition. 2. The protection circuit of claim 1 further comprising a first reference voltage module that generates the first reference voltage signal. 3. The protection circuit of claim 2 further comprising a second reference voltage module that generates a second reference voltage signal that is less than the first reference voltage signal. 4. The protection circuit of claim 1 wherein the detection module includes a voltage comparator that receives the load voltage signal and the first reference voltage signal and that generates the detection signal, wherein the detection signal is in the first state when the load voltage signal is greater than the first reference voltage signal and the detection signal is in the second state when the load voltage signal is less than the first reference voltage signal. 5. The protection circuit of claim 1 wherein the detection signal is in the second state when the MOSFET is in at least one of the current overload condition and the short circuit condition, and the load voltage signal is above a threshold, and the detection signal is in the first state when the load voltage signal is below the threshold. 6. A protection circuit comprising: a first reference voltage module that generates a first reference voltage signal; a second reference voltage module that generates a second reference voltage signal that is less than the first reference voltage signal; a detection module that includes a first voltage comparator that receives a load voltage signal from a MOSFET and the first reference voltage signal, a second voltage comparator that receives the load voltage signal and the second reference voltage signal, and that generates first and second detection signals having first and second states according to the first reference voltage signal, the second reference voltage signal, and the load voltage signal; and a protection module that receives the first and second detection signals and maintains the MOSFET in an ON state when the detection signals are in the first state and transitions the MOSFET from the ON state to an OFF state when at least one of the detection signals is in the second state, wherein the MOSFET does not include a current sensor and does not include a temperature sensor, and the first detection signal is in the second state when the load voltage signal is less than the first reference voltage signal and the second detection signal is in the second state when the load voltage signal is less than the second reference voltage signal. 7. The protection circuit of claim 6 wherein the load voltage signal is less than the first reference voltage signal when the MOSFET is in at least one of a current overload condition, a startup inrush current condition, and a short circuit condition, and is less than the first reference voltage signal when the MOSFET is in an over temperature condition. 8. The protection circuit of claim 6 wherein the load voltage signal is less than the second reference voltage signal when the MOSFET is in a short circuit condition. 9. The protection circuit of claim 6 wherein the detection module further comprises a detection module timer that receives the load voltage signal and that generates a detection module timer signal having first and second states and the detection module timer signal is in the first state when the load voltage signal is at a ground potential. 10. The protection circuit of claim 6 wherein the protection module includes a inrush current timer that maintains the MOSFET in the ON state when the first detection signal is in the second state for less than a first period and that transitions the MOSFET to the OFF state when the first detection signal is in the second state for greater than the first period. 11. The protection circuit of claim 6 wherein the protection module further comprises a trial interval timer that maintains the MOSFET in the OFF state for a first period when the second detection signal transitions from the first state to the second state. 12. The protection circuit of claim 11 wherein the trial interval timer transitions the MOSFET from the OFF state to the ON state after the first period. 13. The protection circuit of claim 9 wherein the load voltage signal is at the ground potential when a load connected to the protection circuit is OFF. 14. A protection system for a MOSFET, comprising: at least one reference voltage module that generates at least one reference voltage signal; a detection module that receives the reference voltage signal and receives a load voltage signal from a MOSFET, and that generates a detection signal having a first state and a second state according to the reference voltage signal and the load voltage signal; a protection module that receives the detection signal and maintains the MOSFET in an ON state when the detection signal is in the first state and transitions the MOSFET from the ON state to an OFF state when the detection signal is in the second state; and a control module that communicates with the reference voltage module and a temperature sensor, that receives a temperature signal from the temperature sensor, that determines a value of the reference voltage signal according to the temperature signal, and that programs the reference voltage module according to the value, wherein the MOSFET does not include a current sensor and does not include a temperature sensor, the detection signal is in the second state when the MOSFET is in at least one of a current overload condition, a startup inrush current condition, and a short circuit condition, and the detection signal is in the second state when the MOSFET is in an over temperature condition.