초록 ▼

Nanometrology device standards and methods for fabricating and using such devices in conjunction with scanning probe microscopes are described. The fabrication methods comprise: (1) epitaxial growth that produces nanometer sized islands of known morphology, structural, morphological and chemical sta

Nanometrology device standards and methods for fabricating and using such devices in conjunction with scanning probe microscopes are described. The fabrication methods comprise: (1) epitaxial growth that produces nanometer sized islands of known morphology, structural, morphological and chemical stability in typical nanometrology environments, and large height-to-width nano-island aspect ratios, and (2) marking suitable crystallographic directions on the device for alignment with a scanning direction.

대표청구항 ▼

I claim: 1. A calibration standard, comprising: a substrate; at least one nano-island situated at a surface of the substrate; and an indicia associated with a crystallographic orientation of the at least one nano-island, wherein the indicia is fixed with respect to the nano-island. 2. The calibr

I claim: 1. A calibration standard, comprising: a substrate; at least one nano-island situated at a surface of the substrate; and an indicia associated with a crystallographic orientation of the at least one nano-island, wherein the indicia is fixed with respect to the nano-island. 2. The calibration standard of claim 1, wherein the indicia is situated on the substrate. 3. The calibration standard of claim 1, wherein the indicia is situated on the at least one nano-island. 4. The calibration standard of claim 1, further comprising a plurality of nano-islands. 5. The calibration standard of claim 1, wherein the indicia is a cleavage plane of the substrate. 6. The calibration standard of claim 1, wherein the indicia is a cleavage plane of the nano-island. 7. The calibration standard of claim 1, wherein the substrate is (111) oriented silicon. 8. The calibration standard of claim 1, wherein the substrate is (111) oriented BaF2. 9. The calibration standard of claim 8, further comprising a layer situated between the substrate and the at least one nano-island. 10. The calibration standard of claim 9, wherein the nano-island has dimensions of between about 1 nm and 20 nm. 11. A method of fabricating a calibration standard, comprising: forming at least one nano-island at a surface of a substrate; and providing an indicia of a crystallographic orientation of the nano-island, wherein the indicia is fixed with respect to the nano-island. 12. The method of claim 11, wherein the indicia is provided by cleaving at least one of the substrate and the nano-island. 13. The method of claim 11, wherein the indicia is provided based on X-ray diffraction analysis of the nano-island. 14. The method of claim 11, wherein the indicia is provided based on electron backscatter diffraction analysis. 15. The method of claim 11, further comprising forming the at least one nano-island by epitaxial growth. 16. The method of claim 11, wherein the nano-island has dimensions between about 1 nm and about 10 nm. 17. The method of claim 11, further comprising forming a plurality of nano-islands at the surface of the substrate.