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Method of fabricating a semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/02
  • H01L-021/84
  • H01L-021/70
출원번호 US-0926573 (2007-10-29)
등록번호 US-7473592 (2009-01-06)
우선권정보 JP-10-251635(1998-09-04)
발명자 / 주소
  • Yamazaki,Shunpei
  • Ohtani,Hisashi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Cook Alex Ltd.
인용정보 피인용 횟수 : 34  인용 특허 : 84

초록 ▼

A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI s

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이 특허에 인용된 특허 (84)

  1. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Active matrix type display circuit and method of manufacturing the same.
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  4. Linn Jack H. ; Lowry Robert K. ; Rouse George V. ; Buller James F., Bonded wafer processing with oxidative bonding.
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  13. Hongyong Zhang JP; Hideto Ohnuma JP; Yasuhiko Takemura JP, METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTAL.
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  14. Miyazawa Yoshihiro (Kanagawa JPX) Minami Eric (Tokyo JPX) Matsushita Takeshi (Kanagawa JPX), MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate throug.
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  17. Smith Donald L., Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenati.
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  18. Lee Sahng Kyoo,KRX ; Park Sang Kyun,KRX, Method for fabricating semiconductor wafers.
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  20. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
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  27. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  30. Houston Theodore W. (Richardson TX), Method of making extended body contact for semiconductor over insulator transistor.
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  31. Hasegawa Mitsuhiko (Muranishi JPX), Method of making high speed semiconductor device having a silicon-on-insulator structure.
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  32. Wakai Haruo (Hamura JPX), Method of manufacturing a polysilicon thin film transistor.
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  46. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
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  55. Shunpei Yamazaki JP; Takeshi Fukunaga JP, Semiconductor device.
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  58. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device.
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  62. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device and manufacturing method thereof.
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  63. Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for forming the same.
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  65. Konuma Toshimitsu,JPX ; Sugawara Akira,JPX ; Uehara Yukiko,JPX ; Zhang Hongyong,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Suzawa Hideomi,JPX ; Uochi Hideki,JPX ; Takemura, Semiconductor device and method for manufacturing the same.
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  66. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  67. Zhang Hongyong,JPX, Semiconductor device and method of fabricating same.
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  68. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Teramoto Satoshi,JPX, Semiconductor device with catalyst addition and removal.
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  69. Takahashi Kunihiro (Tokyo JPX) Kojima Yoshikazu (Tokyo JPX) Takasu Hiroaki (Tokyo JPX) Yamazaki Tsuneo (Tokyo JPX) Iwaki Tadao (Tokyo JPX), Semiconductor device with monosilicon layer.
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  70. Plus Dora (South Bound Brook NJ) Smeltzer Ronald K. (Princeton Township ; Mercer County NJ), Semiconductor device with source and drain depth extenders and a method of making the same.
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  71. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
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  74. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
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  75. Yonehara Takao,JPX ; Sato Nobuhiko,JPX ; Sakaguchi Kiyofumi,JPX ; Kondo Shigeki,JPX, Semiconductor member, and process for preparing same and semiconductor device formed by use of same.
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  78. Kinugawa Masaaki (Tokyo JPX), Short channel CMOS on 110 crystal plane.
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  79. Matloubian Mishel (Dallas TX), Sidewall channel stop process.
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  80. Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
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  81. Sarma Kalluri R. (Mesa AZ) Chanley Charles S. (Scottsdale AZ), Single crystal silicon on quartz.
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  82. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
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  83. Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX), Thin film semiconductor device with gate metal oxide and sidewall spacer.
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  84. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device.
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  6. Yamazaki, Shunpei; Nishida, Eriko, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
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  7. Yamazaki, Shunpei; Nishida, Eriko; Shimazu, Takashi, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
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  9. Yamazaki, Shunpei; Nishida, Eriko; Shimazu, Takashi, Method for manufacturing SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced and method for manufacturing semiconductor device.
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  10. Shimomura, Akihisa; Tsukamoto, Naoki, Method for manufacturing a semiconductor substrate by laser irradiation.
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  11. Yamazaki, Shunpei; Momo, Junpei; Isaka, Fumito; Higa, Eiji; Koyama, Masaki; Shimomura, Akihisa, Method for manufacturing semiconductor device.
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  12. Yamazaki, Shunpei, Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device.
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  13. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  14. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  15. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  16. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  17. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
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  24. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.
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