초록 ▼

A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electro

A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electroless plating reagent to the substrate. The activated electroless plating reagent is applied to a substrate in the process chamber under conditions to cause the metal of the electroless plating reagent to deposit on the substrate. Systems and modules are also described.

대표청구항 ▼

The invention claimed is: 1. A method for electroless plating of a substrate, comprising a) providing a process chamber for metal plating of a substrate; b) exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material t

The invention claimed is: 1. A method for electroless plating of a substrate, comprising a) providing a process chamber for metal plating of a substrate; b) exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electroless plating reagent to the substrate; and c) applying the activated electroless plating reagent to a substrate in the process chamber under conditions to cause the metal of the electroless plating reagent to deposit on the substrate. 2. The method of claim 1, wherein the step of exposing the electroless plating reagent to an Activation Material takes place outside of the process chamber. 3. The method of claim 1, wherein the step of exposing the electroless plating reagent to an Activation Material is a continuous process. 4. The method of claim 1, wherein the Activation Material has a surface area of from about 1 cm2/g to about 20 cm2/g. 5. The method of claim 1, wherein the Activation Material is in the form of particles comprising the Activation Material at least on a portion of the surface of the particles. 6. The method of claim 1, wherein step b) comprises causing the electroless plating reagent to flow through a bed of particles comprising a metal at least on a portion of the surface of the particles. 7. The method of claim 1, wherein the Activation Material comprises a metal selected from copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, and combinations thereof. 8. The method of claim 1, wherein the Activation Material comprises copper. 9. The method of claim 1, wherein the Activation Material comprises nickel. 10. The method of claim 1, wherein the Activation Material comprises cobalt. 11. The method of claim 1, wherein the metal to be plated comprises a metal selected from copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, iridium, and combinations thereof. 12. The method of claim 11, wherein the metal to be plated further comprises a secondary metal selected from the group of chromium, molybdenum, tungsten, manganese, technetium, rhenium, and combinations thereof. 13. The method of claim 1, wherein the metal to be plated comprises cobalt. 14. The method of claim 1, wherein the metal to be plated and the Activation Material comprise the same metal. 15. The method of claim 1, wherein the substrate is a copper containing surface. 16. The method of claim 1, wherein the substrate is a semiconductor wafer.