Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide gla
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
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What is claimed is: 1. A semiconductor-on-insulator structure, comprising: a substrate formed of at least one of a glass and a glass-ceramic material; a plurality of regions, each of which comprises a substantially single-crystal semiconductor material, and is bonded to a respective area of the sub
What is claimed is: 1. A semiconductor-on-insulator structure, comprising: a substrate formed of at least one of a glass and a glass-ceramic material; a plurality of regions, each of which comprises a substantially single-crystal semiconductor material, and is bonded to a respective area of the substrate, wherein the substrate includes: (i) a first substrate layer adjacent the plurality of regions of substantially single-crystal semiconductor material, the first substrate layer having a reduced positive ion concentration in which substantially no modifier positive ions are present, and (ii) a second substrate layer adjacent the first substrate layer and having an enhanced positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion. 2. The semiconductor-on-insulator structure of claim 1 wherein an edge of at least one of the regions contacts an edge of at least one other of the regions. 3. The semiconductor-on-insulator structure of claim 1 wherein at least one of the regions is spaced from at least one other of the regions. 4. The semiconductor-on-insulator structure of claim 1 wherein at least one of the regions differs from at least one other of the regions in at least one of thickness, surface area, or composition. 5. The semiconductor-on-insulator structure of claim 1 further comprising an amorphous or polycrystalline semiconductor material attached to the substrate. 6. The semiconductor-on-insulator structure of claim 1 wherein the area of the substrate is greater than 750 centimeters2. 7. A liquid crystal display comprising the semiconductor-on-insulator structure of claim 1. 8. The semiconductor-on-insulator structure of claim 1, wherein the regions have surface areas Ai which satisfy the relationship: wherein: AT=750 centimeters2 if any of the regions has a circular perimeter, and AT=500 centimeters2 if none of the regions has a circular perimeter. 9. The semiconductor-on-insulator structure of claim 1, wherein a degree to which the modifier positive ions are absent from the first substrate layer having a reduced positive ion concentration, and a degree to which the modifier positive ions exist in the first substrate layer having an enhanced positive ion concentration, are such that substantially no ion re-migration from the substrate into the regions of semiconductor material may occur. 10. The semiconductor-on-insulator structure of claim 1, wherein the bond strength between the regions of semiconductor material and the substrate is at least 8 joules/meter2. 11. The semiconductor-on-insulator structure of claim 1, wherein the substrate is transparent. 12. The semiconductor-on-insulator structure of claim 1, wherein at least one of the regions of semiconductor material is taken from the group consisting of: silicon (Si), germanium-doped silicon (SiGe), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), GaP, and InP. 13. The semiconductor-on-insulator structure of claim 1, wherein an edge of at least a first one of the regions contacts an edge of at least a second one of the regions, the first and second regions being adjacent to one another. 14. The semiconductor-on-insulator structure of claim 1, wherein at least a first one of the regions is spaced from at least a second one of the regions, the first and second regions being adjacent to one another. 15. A semiconductor-on-insulator structure, comprising: a substrate formed of at least one of a glass and a glass-ceramic material; a plurality of regions, each of which comprises a substantially single-crystal semiconductor material, and is bonded to a respective area of the substrate, wherein: the substrate includes: (i) a first substrate layer adjacent the plurality of regions of substantially single-crystal semiconductor material, the first substrate layer having a reduced positive ion concentration, and (ii) a second substrate layer adjacent the first substrate layer and having an enhanced positive ion concentration; and the first substrate layer with the reduced modifier positive ion concentration is operable to inhibit ion re-migration from the substrate into the regions of semiconductor material. 16. The semiconductor-on-insulator structure of claim 15, wherein the regions have surface areas Ai which satisfy the relationship: wherein: AT=750 centimeters2 if any of the regions has a circular perimeter, and AT=500 centimeters2 if none of the regions has a circular perimeter.
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이 특허에 인용된 특허 (34)
Hofmann, James J.; Piper, Glenn W., Anodic bonding.
Spangler Leland J. (1974 Traver Rd. ; Apt. No. 208 Ann Arbor MI 48105) Wise Kensall D. (3670 Charter Pl. Ann Arbor MI 48105), Fully integrated single-crystal silicon-on-insulator process, sensors and circuits.
Brasen Daniel (Lake Hiawatha NJ) Fitzgerald ; Jr. Eugene A. (Bridgewater NJ) Green Martin L. (New Providence NJ) Monroe Donald P. (Berkeley Heights NJ) Silverman Paul J. (Millburn NJ) Xie Ya-Hong (Fl, Semiconductor heterostructure devices with strained semiconductor layers.
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