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Glass-based SOI structures

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-027/12
출원번호 US-0650270 (2007-01-05)
등록번호 US-7476940 (2009-01-13)
발명자 / 주소
  • Couillard,James G.
  • Gadkaree,Kishor P.
  • Mach,Joseph F.
출원인 / 주소
  • Corning Incorporated
대리인 / 주소
    Schaeberle,Timothy M.
인용정보 피인용 횟수 : 19  인용 특허 : 34

초록

Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide gla

대표청구항

What is claimed is: 1. A semiconductor-on-insulator structure, comprising: a substrate formed of at least one of a glass and a glass-ceramic material; a plurality of regions, each of which comprises a substantially single-crystal semiconductor material, and is bonded to a respective area of the sub

이 특허에 인용된 특허 (34)

  1. Hofmann, James J.; Piper, Glenn W., Anodic bonding.
  2. Hofmann James J. ; Elledge Jason B. ; Xia Zhong-Yi ; Cathey David A., Anodically-bonded elements for flat panel displays.
  3. Takayuki Naba JP; Hiroshi Komorita JP; Noritaka Nakayama JP; Kiyoshi Iyogi JP, Ceramic circuit board.
  4. Francis Gaylord L. (Painted Post NY), Composite article and method.
  5. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.
  6. Horne William E. (Bellevue WA), Electro-optically assisted bonding.
  7. Bowman Ronald (Laguna Beach CA), Electrostatically bonded pressure transducers for corrosive fluids.
  8. Kub Francis J. ; Hobart Karl D., Fabrication ultra-thin bonded semiconductor layers.
  9. Stewart, Robert E., Field-assisted fusion bonding.
  10. Spangler Leland J. (1974 Traver Rd. ; Apt. No. 208 Ann Arbor MI 48105) Wise Kensall D. (3670 Charter Pl. Ann Arbor MI 48105), Fully integrated single-crystal silicon-on-insulator process, sensors and circuits.
  11. Nathan W. Cheung ; Francois J. Henley, Generic layer transfer methodology by controlled cleavage process.
  12. Miyazaki, Seiji, Glass for anodic bonding.
  13. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  14. Chacon Lisa C. ; Ellison Adam J. G. ; Hares George B. ; Kohli Jeffrey T. ; Lapp Josef C. ; Morena Robert, Glasses for flat panel displays.
  15. Tien-Hsi Lee TW, Manufacturing method of a thin film on a substrate.
  16. Yanagita, Kazutaka; Kohda, Mitsuharu; Sakaguchi, Kiyofumi; Fujimoto, Akira, Method and apparatus for separating member.
  17. McCarthy Anthony M. (Menlo Park CA), Method for forming silicon on a glass substrate.
  18. Bruel Michel (Veurey FRX), Method for placing semiconductive plates on a support.
  19. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  20. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
  21. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  22. Maegawa Nobuteru,JPX ; Okada Hiroaki,JPX ; Tsuzaki Michimasa,JPX ; Sakai Yuri,JPX ; Shimoda Katsuyoshi,JPX ; Komatsu Teruaki,JPX ; Murase Shinya,JPX ; Inoue Hiroyuki,JPX ; Sagawa Masayuki,JPX, Method of fabricating a thermoelectric module.
  23. Forbes Leonard, Methods for making silicon-on-insulator structures.
  24. Iwane Masaaki,JPX ; Yonehara Takao,JPX ; Ohmi Kazuaki,JPX, Process for forming an SOI substrate.
  25. Cheng, Zhi-Yuan; Fitzgerald, Eugene A.; Antoniadis, Dimitri A.; Hoyt, Judy L., Process for producing semiconductor article using graded epitaxial growth.
  26. Egloff Richard, Process for production of thin layers of semiconductor material.
  27. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  28. Fitzergald, Eugene A., Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits.
  29. Henley Francois J. ; Cheung Nathan W., Reusable substrate for thin film separation.
  30. Brasen Daniel (Lake Hiawatha NJ) Fitzgerald ; Jr. Eugene A. (Bridgewater NJ) Green Martin L. (New Providence NJ) Monroe Donald P. (Berkeley Heights NJ) Silverman Paul J. (Millburn NJ) Xie Ya-Hong (Fl, Semiconductor heterostructure devices with strained semiconductor layers.
  31. Ohshima Hisayoshi,JPX ; Matsui Masaki,JPX ; Onoda Kunihiro,JPX ; Yamauchi Shoichi,JPX, Semiconductor substrate manufacturing method.
  32. Yukitaka Nakano JP; Hiroyuki Nagasawa JP; Kuniaki Yagi JP; Takamitsu Kawahara JP, Silicon carbide film and method for manufacturing the same.
  33. Ogura Atsushi,JPX, Silicon-on-insulator (SOI) substrate and method of fabricating the same.
  34. Henley Francois J. ; Cheung Nathan W., Silicon-on-silicon hybrid wafer assembly.

이 특허를 인용한 특허 (19)

  1. Zuniga, Steven M.; Tolles, Robert D.; Aqui, Derek G.; Nagengast, Andrew J.; Senn, Anthony J.; Guerrero, Keenan Leon, Bonding apparatus and method.
  2. Zuniga, Steven M.; Tolles, Robert D.; Aqui, Derek G.; Nagengast, Andrew J.; Senn, Anthony J.; Guerrero, Keenan Leon, Bonding apparatus and method.
  3. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
  4. Yamazaki, Shunpei, Display device, method for manufacturing display device, and SOI substrate.
  5. Sekiguchi, Keiichi; Hanaoka, Kazuya; Ito, Daigo, Manufacturing method of SOI substrate.
  6. Komatsu, Yoshihiro; Moriwaka, Tomoaki; Takahashi, Kojiro, Method for forming SOI substrate and apparatus for forming the same.
  7. Shimomura, Akihisa; Tokunaga, Hajime, Method for manufacturing SOI substrate.
  8. Pitney, John A.; Yoshimura, Ichiro; Fei, Lu, Methods for reducing the width of the unbonded region in SOI structures.
  9. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
  10. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
  11. Kakehata, Tetsuya; Ohnuma, Hideto; Yamamoto, Yoshiaki; Makino, Kenichiro, SOI substrate and manufacturing method thereof.
  12. Yamazaki, Shunpei; Ohnuma, Hideto, SOI substrate and method for manufacturing SOI substrate.
  13. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
  14. Yamazaki, Shunpei; Togawa, Maki; Arai, Yasuyuki, SOI substrate and method for manufacturing SOI substrate.
  15. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
  16. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
  17. Ohnuma, Hideto; Kakehata, Tetsuya; Iikubo, Yoichi, SOI substrate, method for manufacturing the same, and semiconductor device.
  18. Couillard, James Gregory, Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process.
  19. Pitney, John A.; Yoshimura, Ichiro; Fei, Lu, Semiconductor wafers with reduced roll-off and bonded and unbonded SOI structures produced from same.
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