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Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • B05D-003/12
출원번호 US-0918232 (2004-08-13)
등록번호 US-7479304 (2009-01-20)
발명자 / 주소
  • Sun,Jennifer Y.
  • Thach,Senh
  • Dempster,James
  • Xu,Li
  • Pham,Thanh N.
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Law Office of Shirley L. Church
인용정보 피인용 횟수 : 25  인용 특허 : 13

초록

Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of thro

대표청구항

We claim: 1. A method of fabricating a gas distribution plate for use in a gas distribution assembly in a semiconductor processing chamber, said method comprising: a) selecting a substrate to be used to fabricate said gas distribution plate, wherein said substrate consists of yttrium oxide includin

이 특허에 인용된 특허 (13)

  1. Oehrlein Gottlieb Stefan ; Vender David,NLX ; Zhang Ying ; Haverlag Marco,NLX, Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve pr.
  2. Han Nianci ; Shih Hong ; Yuan Jie ; Lu Danny ; Ma Diana, Ceramic composition for an apparatus and method for processing a substrate.
  3. Nianci Han ; Hong Shih ; Jie Yuan ; Danny Lu ; Diana Ma, Ceramic composition for an apparatus and method for processing a substrate.
  4. Murakawa, Shunichi; Itoh, Yumiko; Aida, Hiroshi; Nakamura, Katsumi; Hayasaki, Tetsuzi, Ceramic material resistant to halogen plasma and member utilizing the same.
  5. Schoepp Alan M. ; Denty ; Jr. William M. ; Barnes Michael, Chamber liner for semiconductor process chambers.
  6. Tanaka, Toshiyuki; Wada, Koji; Hisamoto, Jun; Sawada, Hiroki; Matsuura, Hiroshi, Chamber material made of Al alloy and heater block.
  7. Wojnarowski Robert John, Electronic device pad relocation, precision placement, and packaging in arrays.
  8. Noorbakhsh,Hamid; Carducci,James D.; Sun,Jennifer Y.; Elizaga,Larry D., Gas distribution showerhead for semiconductor processing.
  9. Kumada Masatoshi (Kawasaki JPX), Gas handling device assembly used for a CVD apparatus.
  10. Jeong Gey Lee KR, Method for fabricating an electrode of a plasma chamber.
  11. Wicker Thomas E. ; Maraschin Robert A., Particle controlling method and apparatus for a plasma processing chamber.
  12. Szapucki Matthew P. ; Kulkaski Richard ; Hadley Trevor J. ; Santorelli Mark Anthony, Showerhead electrode assembly for plasma processing.
  13. Sun, Jennifer Y; Wu, Shun Jackson; Thach, Senh; Kumar, Ananda H; Wu, Robert W; Wang, Hong; Lin, Yixing; Stow, Clifford C, Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers.

이 특허를 인용한 특허 (25)

  1. Matsumoto, Naoki; Yoshikawa, Jun, Baffle plate.
  2. Matsumoto, Naoki; Yoshikawa, Jun, Baffle plate for manufacturing semiconductor.
  3. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Clamped showerhead electrode assembly.
  4. Larson, Dean Jay; Stevenson, Tom; Wang, Victor, Composite showerhead electrode assembly for a plasma processing apparatus.
  5. Huang, Lihua Li; Scott, Duane D.; Doench, Joseph P.; Burns, Jamie; Stenta, Emily P.; Bettencourt, Gregory R.; Daugherty, John E., Ductile mode drilling methods for brittle components of plasma processing apparatuses.
  6. Stumpf, John F.; Dyer, Timothy; Ruberg, David Allen; Huang, Lihua L., Ductile mode machining methods for hard and brittle components of plasma processing apparatuses.
  7. Fukushima, Makoto; Yasuda, Hozumi; Nabeya, Osamu; Watanabe, Katsuhide; Namiki, Keisuke, Elastic membrane for semiconductor wafer polishing.
  8. Fukushima, Makoto; Yasuda, Hozumi; Nabeya, Osamu; Watanabe, Katsuhide; Namiki, Keisuke, Elastic membrane for semiconductor wafer polishing.
  9. Nagakubo, Keiichi, Electrode member for a plasma processing apparatus.
  10. Kuwabara, Yusei; Nagakubo, Keiichi, Electrode plate for a plasma processing apparatus.
  11. Jang, Hyun Soo; Lee, Jeong Ho; Kim, Young Hoon; Kim, Jong Su, Electrode plate for semiconductor manufacturing apparatus.
  12. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Electroplating an yttrium-containing coating on a chamber component.
  13. Larson, Dean J.; Stevenson, Tom; Wang, Victor, Film adhesive for semiconductor vacuum processing apparatus.
  14. Larson, Dean J.; Stevenson, Tom; Wang, Victor, Film adhesive for semiconductor vacuum processing apparatus.
  15. Wang, Qunhua; Tiner, Robin L., Flow blocker plate.
  16. Kuwabara, Yusei; Nagakubo, Keiichi, Focusing ring.
  17. Kuwabara, Yusei; Nagakubo, Keiichi, Focusing ring.
  18. Mizukami, Shunsuke, Focusing ring.
  19. Yoshimura, Akihiro; Miyagawa, Masaaki; Sato, Tetsuji, Focusing ring.
  20. Mori, Yoshinobu; Okabe, Akira, Lid for epitaxial growing device.
  21. Han, Nianci; Xu, Li; Shih, Hong, Method of manufacturing a process chamber component having yttrium-aluminum coating.
  22. Han, Nianci; Xu, Li; Shih, Hong; Zhang, Yang; Lu, Danny; Sun, Jennifer Y., Process chamber component having electroplated yttrium containing coating.
  23. Han, Nianci; Xu, Li; Shih, Hong, Process chamber component having yttrium—aluminum coating.
  24. Nagasaka, Munetoshi; Ogasawara, Ikuo; Shinohara, Eiichi, Wafer attracting plate.
  25. Chhatre, Rish; Schaefer, David, Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber.
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