A thermal emitter device includes a cavity structure that comprises an active medium for allowing thermal emissions to occur. A photonic crystal structure is positioned on one side of the cavity structure. The photonic crystal structure comprises alternating layers of high index and low index materi
A thermal emitter device includes a cavity structure that comprises an active medium for allowing thermal emissions to occur. A photonic crystal structure is positioned on one side of the cavity structure. The photonic crystal structure comprises alternating layers of high index and low index materials and acts as a first mirror for the cavity structure. A highly reflective mirror structure is positioned on another side of the cavity structure and acting as both the high-temperature source of radiation and a second mirror for the cavity structure.
대표청구항▼
What is claimed is: 1. A narrow frequency band thermal radiation device based on a resonant cavity structure that comprises: a transparent medium for allowing thermal radiation enhancement; a reflective substantially non-absorbing structure that is positioned on one side of said cavity structure, s
What is claimed is: 1. A narrow frequency band thermal radiation device based on a resonant cavity structure that comprises: a transparent medium for allowing thermal radiation enhancement; a reflective substantially non-absorbing structure that is positioned on one side of said cavity structure, said reflective non-absorbing structure acting as a first mirror for said cavity structure; and a reflective mirror structure that is positioned on another side of said cavity structure and acting as both the high-temperature source of radiation and a second mirror for said cavity structure, said reflective mirror structure comprises a metallic mirror; wherein said cavity structure includes a frequency dependant transfer function that enhances thermal emission originating from said metallic mirror building a quasi-monochromatic field while suppressing non-resonant frequencies. 2. The narrow frequency band thermal radiation device of claim 1, wherein said reflective substantially non-absorbing structure comprises a one or more dielectric layers with different dielectric constants such that the said reflective substantially non-absorbing structure is reflective and substantially non-absorbing near the resonant wavelength of the said cavity structure. 3. The narrow frequency band thermal radiation device of claim 1, wherein first said reflective reflective substantially non-absorbing structure comprises a one-dimensional photonic crystal with at least two dielectric materials that provide a periodic variation in the dielectric constant such that the photonic crystal exhibits large omnidirectional reflection near the resonant wavelength of the said cavity structure. 4. The narrow frequency band thermal radiation device of claim 1, wherein said reflective substantially non-absorbing reflective structure comprises a two-dimensional photonic crystal with at least two dielectric materials that provide a periodic variation in the dielectric constant such that the photonic crystal exhibits large reflection near the resonant wavelength of the said cavity structure. 5. The narrow frequency band thermal radiation device of claim 1, wherein said reflective substantially non-absorbing comprises of a three-dimensional photonic crystal with at least two dielectric materials that provide a periodic variation in the dielectric constant such that the photonic crystal exhibits large reflection near the resonant wavelength of the said cavity structure. 6. The narrow frequency band thermal radiation device of claim 1, wherein said transparent medium comprises air. 7. The narrow frequency band thermal radiation device of claim 1, wherein said transparent medium comprises a dielectric layer. 8. The narrow frequency band thermal radiation device of claim 1, wherein said a reflective mirror structure comprises a reflective material with non-zero imaginary part dielectric constant. 9. The narrow frequency band thermal radiation device of claim 1, wherein said reflective mirror structure comprises a metal layer. 10. A method for producing a narrow frequency band thermal radiation device comprising: providing a cavity structure that comprises a cavity medium for allowing thermal radiation enhancement; positioning a reflective substantially non-absorbing structure on one side of said cavity structure; and positioning a reflective mirror structure on another side of said cavity structure that acts as both the high-temperature source of thermal radiation and as a second mirror for said cavity structure; and heating said reflective mirror structure that comprises a metallic mirror and said cavity structure includes a frequency dependant transfer function that enhances thermal emission originating from said metallic mirror building a quasi-monochromatic field while suppressing non-resonant frequencies. 11. The method of claim 10, wherein said reflective mirror structure comprises a layer of metal. 12. The method of claim 10, wherein heating said reflective mirror structure comprises resistive heating said reflective mirror structure by applying a voltage. 13. The method of claim 10, wherein heating said reflective mirror structure comprises heating the mirror structure with a combustion heat or other heat source. 14. The method of claim 10, wherein said reflective substantially non-absorbing structure comprises a one-dimensional photonic crystal structure with periodic variation of dielectric constant. 15. The method of claim 10, wherein said reflective substantially non-absorbing structure comprises a one-dimensional photonic crystal structure that consists of two alternating dielectric materials. 16. The method of claim 15, wherein said cavity layer comprises the same low dielectric material used in the one dimensional photonic crystal; wherein the thickness of the cavity layer is twice the thickness of the layer in the photonic crystal. 17. The method of claim 15, wherein said the cavity layer comprises the same materials as said any of said alternative dielectric materials, where the thickness of the cavity layer is twice the thickness of the layer in the photonic crystal. 18. A thermal emitter device: a cavity structure that comprises an active medium for allowing thermal emissions to occur; a photonic crystal structure that is positioned on one side of said cavity structure, said photonic crystal structure comprises alternating layers of high index and low index materials and acts as a first mirror for said cavity structure, high and low index layers comprise a size of a quarter wavelength; and a reflective mirror structure that is positioned on another side of said cavity structure and acting as both the high-temperature source of radiation and a second mirror for said cavity structure, said reflective mirror structure comprises a metallic mirror; wherein said cavity structure includes a frequency dependant transfer function that enhances thermal emission originating from said metallic mirror building a quasi-monochromatic field while suppressing non-resonant frequencies. 19. The thermal emitter of claim 18, wherein said high index layers comprise Si. 20. The thermal emitter of claim 18, wherein said low index layers comprise SiO2. 21. The thermal emitter of claim 18, wherein said reflective mirror structure comprises silver. 22. The thermal emitter of claim 18, wherein said reflective mirror structure comprises tungsten. 23. The thermal emitter of claim 18, wherein said photonic crystal structure comprises a one dimensional photonic crystal structure. 24. The thermal emitter of claim 18, wherein said cavity structure comprises SiO2. 25. The thermal emitter of claim 18, wherein said photonic crystal structure comprises a mid-bandgap less than 10 μm. 26. A method of forming a thermal emitter device: providing a cavity structure that comprises an active medium for allowing thermal emissions to occur; positioning a photonic crystal structure on one side of said cavity structure, said photonic crystal structure comprises alternating layers of high index and low index materials and acts as a first mirror for said cavity structure, said high and low index layers comprise a size of a quarter wavelength; and positioning a reflective mirror structure on another side of said cavity structure and acting as both the high-temperature source of radiation and a second mirror for said cavity structure, said reflective mirror structure comprises a metallic mirror and said cavity structure includes a frequency dependant transfer function that enhances thermal emission originating from said metallic mirror building a quasi-monochromatic field while suppressing non-resonant frequencies. 27. The method of claim 26, wherein said high index layers comprise Si. 28. The method of claim 26, wherein said low index layers comprise SiO2. 29. The method of claim 26, wherein said reflective mirror structure comprises silver. 30. The method of claim 26, wherein said reflective mirror structure comprises tungsten. 31. The method of claim 26, wherein said photonic crystal structure comprises a one dimensional photonic crystal structure. 32. The method of claim 26, wherein said cavity structure comprises SiO2. 33. The method of claim 26, wherein said photonic crystal structure comprises a mid-bandgap less than 10 μm.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (8)
Akiyama,Shoji; Celanovic,Ivan; Jovanovic,Natalija Z.; O'Sullivan,Francis; Wada,Kazumi, Anti-reflection coating for the pass-band of photonic bandgap crystal.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.