최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0977282 (2007-10-24) |
등록번호 | US-7482823 (2009-01-27) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 6 인용 특허 : 942 |
A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and
A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and the probe tip.
We claim: 1. A probe comprising: (a) a dielectric substrate; (b) an elongate conductor suitable to be electrically interconnected to a test signal supported by said substrate; (c) a conductive member suitable to be electrically interconnected to a ground signal supported by said substrate; (d) a co
We claim: 1. A probe comprising: (a) a dielectric substrate; (b) an elongate conductor suitable to be electrically interconnected to a test signal supported by said substrate; (c) a conductive member suitable to be electrically interconnected to a ground signal supported by said substrate; (d) a contact electrically interconnected to said elongate conductor for testing a device under test; (e) wherein said elongate conductor and said conductive member form a controlled impedance structure; (f) wherein said substrate has a thickness of less than 40 microns with a dielectric constant of less than 7. 2. The probe of claim 1 wherein said controlled impedance structure is a microstrip structure. 3. The probe of claim 1 wherein said elongate conductor is supported on a first side of said substrate and wherein said conductive member is supported on a second side of said substrate. 4. The probe of claim 1 further comprising a conductive path electrically connected to said elongate conductor that extends between a first side of said substrate and a second side of said substrate and said conductive path free from electrical interconnection with said conductive member. 5. The probe of claim 4 wherein said conductive path between said first side and said second side is in a manner free from an air gap between the conductive path and the end of said substrate for at least a majority of the thickness of said substrate. 6. The probe of claim 4 wherein said contact is in the form of a bump. 7. The probe of claim 1 wherein said elongate conductor is electrically interconnected to a central conductor of a coaxial cable. 8. The probe of claim 7 wherein said conductive member is electrically connected to a conductor surrounding said central conductor of said coaxial cable. 9. The probe of claim 8 wherein said substrate is supported by said coaxial cable. 10. The probe of claim 9 wherein said substrate is supported by a shelf of said coaxial cable. 11. The probe of claim 1 wherein said conductive member is substantially planar. 12. The probe of claim 1 wherein said dielectric substrate is semi-flexible. 13. The probe of claim 1 wherein said dielectric substrate has a dielectric constant less than 5. 14. The probe of claim 1 wherein said dielectric substrate has a dielectric constant less than 4. 15. The probe of claim 1 wherein said dielectric substrate has a dielectric constant less than 2. 16. The probe of claim 1 wherein said conductive member covers greater than 50% of a side of said substrate. 17. The probe of claim 1 wherein said conductive member covers greater than 60% of a side of said substrate. 18. The probe of claim 1 wherein said conductive member covers greater than 70% of a side of said substrate. 19. The probe of claim 1 wherein said conductive member covers greater than 80% of a side of said substrate. 20. The probe of claim 1 wherein said conductive member covers greater than 90% of a side of said substrate. 21. The probe of claim 1 wherein said contact comprises a via through said substrate. 22. The probe of claim 1 wherein said conductive member laterally surrounds at least 50% of said contact. 23. The probe of claim 1 wherein said conductive member laterally surrounds at least 75% of said contact. 24. The probe of claim 1 wherein said conductive member laterally surrounds at least 100% of said contact. 25. The probe of claim 1 wherein said contact is in the form of a conductive finger. 26. The probe of claim 1 wherein said substrate has a thickness less than 30 microns. 27. The probe of claim 1 wherein said substrate has a thickness less than 20 microns. 28. A probe comprising: (a) a dielectric substrate supporting an elongate conductor on said substrate and a conductive member supported on said substrate; (b) a contact electrically interconnected to said elongate conductor for testing a device under test; (c) wherein said elongate conductor and said substrate form a controlled impedance structure; (d) wherein said contact has a height relative to the adjoining surface of said dielectric substrate of less than 150 microns. 29. The probe of claim 28 wherein said contact has a height relative to the adjoining surface of said dielectric substrate of less than 100 microns. 30. The probe of claim 28 wherein said contact has a height relative to the adjoining surface of said dielectric substrate of less than 75 microns. 31. The probe of claim 28 wherein said contact has a height relative to the adjoining surface of said dielectric substrate of less than 55 microns. 32. The probe of claim 28 further comprising a co-axial cable interconnected to said dielectric substrate, wherein said co-axial cable is maintained in a tensioned state when said contact is free from being engaged with said device under test. 33. The probe of claim 28 herein said substrate has a thickness of less than 40 microns with a dielectric constant of less than 7.
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