초록 ▼

A transient blocking unit (TBU) having reduced series impedance is provided. A TBU includes two or more depletion mode transistors arranged to provide a low series impedance in normal operation and a high series impedance when the input current exceeds a predetermined threshold. A nonlinear impedanc

A transient blocking unit (TBU) having reduced series impedance is provided. A TBU includes two or more depletion mode transistors arranged to provide a low series impedance in normal operation and a high series impedance when the input current exceeds a predetermined threshold. A nonlinear impedance element is included in the TBU that acts as a current limiter having a substantially constant saturation current over a range of applied voltages. This saturation current is selected to be the threshold current of the TBU. When the threshold is exceeded, the voltage developed across the nonlinear impedance element tends to drive the TBU into its high impedance state. When the operating current is below threshold, the TBU series resistance is relatively low because the nonlinear impedance element is in its low-resistance state. The nonlinear impedance element can be a separate circuit element, or it can be integrated with one or more of the TBU transistors.

대표청구항 ▼

The invention claimed is: 1. An apparatus for electrical transient blocking comprising: a transient blocking unit including at least one n-channel depletion mode device and at least one p-channel depletion mode device, wherein the depletion mode devices are connected such that an applied electrical

The invention claimed is: 1. An apparatus for electrical transient blocking comprising: a transient blocking unit including at least one n-channel depletion mode device and at least one p-channel depletion mode device, wherein the depletion mode devices are connected such that an applied electrical transient alters a bias voltage Vp of said depletion mode p-channel device and alters a bias voltage Vn of said depletion mode n-channel device to block the transient by switching off the depletion mode devices; and one or more nonlinear impedance elements, wherein each nonlinear impedance element is a two-terminal nonlinear impedance element, whereby the nonlinear impedance element is connected in series with and between channels of two of the depletion mode devices; wherein each nonlinear impedance element has an I-V response such that a current through the impedance element is substantially equal to a saturation current Is for a range of applied voltages. 2. The apparatus of claim 1, wherein at least one of said nonlinear impedance elements is integrated with one of said depletion mode devices as a separate channel segment. 3. The apparatus of claim 2, wherein said separate channel segment comprises multiple channel subsegments. 4. The apparatus of claim 2, wherein said separate channel segment is graded. 5. The apparatus of claim 1, wherein said nonlinear impedance elements are selected from the group consisting of unipolar nonlinear impedance elements, bipolar nonlinear impedance elements, and transistors having a gate connected the transistor's source or the transistor's drain. 6. The apparatus of claim 1, wherein said transient blocking unit is a unipolar transient blocking unit. 7. The apparatus of claim 6, wherein said transient blocking unit comprises an input n-channel depletion mode NMOS transistor (Q1) and a p-channel depletion mode JFET (Q2), wherein Q1 and Q2 each have a first channel terminal, a gate and a second channel terminal, and wherein the first channel terminal of Q1 is connected to the first channel terminal of Q2, the gate of Q1 is connected to the second channel terminal of Q2, and the second channel terminal of Q1 is connected to the gate of Q2. 8. The apparatus of claim 7, wherein said nonlinear impedance elements comprise a unipolar nonlinear impedance element connecting the first channel terminal of Q1 to the first channel terminal of Q2. 9. A method for electrical transient blocking comprising: providing a transient blocking unit including at least one n-channel depletion mode device and at least one p-channel depletion mode device, wherein the depletion mode devices are connected such that an applied electrical transient alters a bias voltage Vp of said depletion mode p-channel device and alters a bias voltage Vn of said depletion mode n-channel device to block the transient by switching off the depletion mode devices; providing one or more nonlinear impedance elements, wherein each nonlinear impedance element is a two terminal nonlinear impedance element, whereby the nonlinear impedance element is connected in series with and between channels of two of the depletion mode devices; wherein each nonlinear impedance element has an I-V response such that a current through the impedance element is substantially equal to a saturation current Is for a range of applied voltages.