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Flash EEprom system

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-011/34
출원번호 US-0414718 (2003-04-15)
등록번호 US-7492660 (2009-02-17)
발명자 / 주소
  • Harari,Eliyahou
  • Norman,Robert D.
  • Mehrotra,Sanjay
출원인 / 주소
  • SanDisk Corporation
대리인 / 주소
    Davis Wright Tremaine LLP
인용정보 피인용 횟수 : 6  인용 특허 : 89

초록

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c

대표청구항

The invention claimed is: 1. A method of accessing a flash memory array, comprising: a) receiving a logical address at a controller for the flash memory array and determining that the logical address corresponds to a defective memory location; b) determining, at the controller, a block of the flash

이 특허에 인용된 특허 (89)

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이 특허를 인용한 특허 (6)

  1. Norman, Robert, Integrated circuits and methods to compensate for defective memory in multiple layers of memory.
  2. Sukegawa, Hiroshi, Memory device including memory controller.
  3. Sukegawa, Hiroshi, Memory device including memory controller.
  4. Camp, Charles J.; Frost, Holloway H., Reduction of read disturb errors.
  5. Camp, Charles J.; Frost, Holloway H., Reduction of read disturb errors.
  6. Camp, Charles J.; Frost, Holloway H., Reduction of read disturb errors in NAND FLASH memory.
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