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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0749064 (2007-05-15) |
등록번호 | US-7494908 (2009-02-24) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 5 인용 특허 : 351 |
A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at leas
A system for processing a substrate is provided which includes at least one atomic layer deposition (ALD) chamber for depositing a barrier layer containing tantalum and at least one physical vapor deposition (PVD) metal seed chamber for depositing a metal seed layer on the barrier layer. The at least one ALD chamber may be in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source. In one example, the tantalum-containing compound is an organometallic tantalum precursor, such as PDMAT. In another example, the second precursor source contains a nitrogen precursor, such as ammonia. The PDMAT may have a chlorine concentration of about 100 ppm or less, preferably, about 30 ppm or less, and more preferably, about 5 ppm or less. In some examples, the PVD metal seed chamber is used to deposit a copper-containing metal seed layer.
The invention claimed is: 1. A system for processing a substrate, comprising: at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a
The invention claimed is: 1. A system for processing a substrate, comprising: at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and at least one physical vapor deposition metal seed chamber for depositing a copper-containing seed layer on the barrier layer. 2. A system for processing a substrate, comprising: at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and at least one physical vapor deposition metal seed chamber for depositing a metal seed layer on the barrier layer. 3. The system of claim 2, wherein the metal seed layer comprises a metal selected from the group consisting of copper, titanium, zirconium, tin, alloys thereof, and combinations thereof. 4. The system of claim 3, wherein the at least one physical vapor deposition metal seed chamber is a high density plasma physical vapor deposition metal seed chamber. 5. The system of claim 4, further comprising one or more transfer chambers for transferring a substrate between the at least one atomic layer deposition chamber and the at least one physical vapor deposition metal seed chamber. 6. The system of claim 2, wherein the tantalum-containing compound is an organometallic tantalum precursor. 7. The system of claim 6, wherein the organometallic tantalum precursor is PDMAT. 8. The system of claim 7, wherein the PDMAT has a chlorine concentration of about 100 ppm or less. 9. The system of claim 8, wherein the chlorine concentration is about 30 ppm or less. 10. The system of claim 9, wherein the chlorine concentration is about 5 ppm or less. 11. The system of claim 2, wherein the second precursor source comprises a nitrogen precursor. 12. The system of claim 11, wherein the nitrogen precursor is ammonia. 13. The system of claim 2, wherein the tantalum-containing compound is a tantalum halide precursor. 14. The system of claim 13, wherein the tantalum halide precursor comprises chlorine. 15. A system for processing a substrate, comprising: at least one atomic layer deposition chamber for depositing a barrier layer comprising tantalum, wherein the at least one atomic layer deposition chamber is in fluid communication with a first precursor source providing a tantalum-containing compound and a second precursor source; and at least one deposition chamber is a physical vapor deposition chamber or an electroless deposition chamber for depositing a metal seed layer on the barrier layer. 16. The system of claim 15, wherein the metal seed layer comprises a metal selected from the group consisting of copper, titanium, zirconium, tin, alloys thereof, and combinations thereof. 17. The system of claim 16, wherein the at least one deposition chamber is a physical vapor deposition chamber. 18. The system of claim 17, wherein the physical vapor deposition chamber is a high density plasma physical vapor deposition metal seed chamber. 19. The system of claim 18, further comprising one or more transfer chambers for transferring a substrate between the at least one atomic layer deposition chamber and the physical vapor deposition chamber. 20. The system of claim 15, wherein the tantalum-containing compound is an organometallic tantalum precursor. 21. The system of claim 20, wherein the organometallic tantalum precursor is PDMAT. 22. The system of claim 21, wherein the PDMAT has a chlorine concentration of about 100 ppm or less. 23. The system of claim 22, wherein the chlorine concentration is about 30 ppm or less. 24. The system of claim 23, wherein the chlorine concentration is about 5 ppm or less. 25. The system of claim 15, wherein the second precursor source comprises a nitrogen precursor. 26. The system of claim 25, wherein the nitrogen precursor is ammonia. 27. The system of claim 15, wherein the tantalum-containing compound is a tantalum halide precursor. 28. The system of claim 27, wherein the tantalum halide precursor comprises chlorine.
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