Energy conversion systems utilizing parallel array of automatic switches and generators
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F02B-063/04
F02B-063/00
H02K-007/18
출원번호
US-0529997
(2006-09-28)
등록번호
US-7495350
(2009-02-24)
발명자
/ 주소
Pinkerton,Joseph F.
Harlan,John C
출원인 / 주소
CJP IP Holdings, Ltd.
대리인 / 주소
Kramer Levin Naftalis & Frankel LLP
인용정보
피인용 횟수 :
3인용 특허 :
78
초록▼
Nanoelectromechanical systems utilizing nanometer-scale assemblies are provided that convert thermal energy into another form of energy that can be used to perform useful work at macroscopic level. Nanometer-scale beams are provided that reduce the velocity of working substance molecules that colli
Nanoelectromechanical systems utilizing nanometer-scale assemblies are provided that convert thermal energy into another form of energy that can be used to perform useful work at macroscopic level. Nanometer-scale beams are provided that reduce the velocity of working substance molecules that collide with this nanometer-scale beam by converting some of the kinetic energy of a colliding molecule into kinetic energy of the nanometer-scale beam. In embodiments that operate without a working substance, the thermal vibrations of the beam itself create the necessary beam motion. Automatic switches may be added to realize a regulator such that the nanometer-scale beams only deliver voltages that exceed a particular amount. The output energy of millions of these devices may be efficiently summed together.
대표청구항▼
What is claimed is: 1. An energy regulation and conversion system comprising: a source of DC voltage; a plurality of resistor-transistor assemblies coupled in a parallel configuration, each of said assemblies comprising: a resistor; and a nanometer-scale transistor having base, collector, and emitt
What is claimed is: 1. An energy regulation and conversion system comprising: a source of DC voltage; a plurality of resistor-transistor assemblies coupled in a parallel configuration, each of said assemblies comprising: a resistor; and a nanometer-scale transistor having base, collector, and emitter terminals, wherein said transistor is electrically connected in series with said resistor, said resistor is producing Johnson Noise at said collector terminal, said base terminal is coupled to said source of DC voltage, and said DC voltage automatically turns said transistor ON when said Johnson noise exceeds a minimum level. 2. The system of claim 1, wherein at least two of said plurality of assemblies are coupled in series to a system output. 3. An energy generation and regulation system comprising: a source of DC voltage; a plurality of generator-transistor assemblies coupled in a parallel configuration, each one of said generator-transistor assemblies comprising: a transistor having a collector terminal, a base terminal coupled to said DC voltage, and emitter terminal; and a nanometer-scale electromotive force generator coupled in series with said transistor, wherein said generator produces an output voltage at said collector terminal and DC voltage automatically turns said transistor ON when said output voltage exceeds a minimum level. 4. The system of claim 3, wherein at least two of said plurality of assemblies are coupled in series to a system output. 5. An energy conversion and regulation system comprising: a base member; and a plurality of nanometer-scale assemblies coupled to said base member, wherein each of said nanometer-scale assemblies can convert one form of energy, a non-converted energy, into another form of energy, a converted energy, wherein each one of said nanometer-scale assemblies comprising: an output; a mounting assembly coupled to said base member; a nanometer-scale beam fixed to said mounting assembly, said beam having a free-moving portion; and an electrically conductive automatic switch placed within the proximity of said free-moving portion, wherein said converted energy is provided to said output when said free-moving portion electrically couples said automatic switch. 6. The system of claim 5, wherein said nanometer-scale beam includes a layer of piezoelectric material located between a first electrically conductive layer and a second electrically conductive layer. 7. The system of claim 6, wherein said second electrically conductive layer of said free-moving portion electrically couples said switch. 8. The system of claim 7, wherein said automatic switch is a nanotube. 9. A nanometer-scale transistor comprising: a first input contact; a second input contact; a base member; a mounting assembly coupled to said base member; a nanometer-scale beam fixed to said mounting assembly and having a portion that is free-to-move, wherein said nanometer-scale beam is coupled to said first input contact and is provided a first charge; and a charge member layer placed in the proximity of said free-moving portion, wherein said charge member layer is coupled to said second input contact, said charge member layer is provided a second charge, and said first charge and said second charge interact to provide mechanical stress in said free-moving portion. 10. The nanometer-scale transistor of claim 9, wherein said nanometer-scale beam is a nanotube. 11. The nanometer-scale transistor of claim 9 further comprising: an external magnetic field. 12. The nanometer-scale transistor of claim 9 further comprising: an output contact, wherein said mechanical stress causes said free-moving portion to electrically couple with said output contact. 13. A nanometer-scale transistor comprising: a first input contact; a second input contact; a base member; a mounting assembly coupled to said base member; a nanometer-scale beam fixed to said mounting assembly and having a portion that is free-to-move, wherein said nanometer-scale beam is coupled to said first input contact and is provided a first charge; a charge member layer placed in the proximity of said free-moving portion, wherein said charge member layer is coupled to said second input contact, said charge member layer is provided a second charge, said first charge and said second charge interact to provide mechanical stress in said free-moving portion, and said first and second charges have the same polarity; and an output contact, wherein said mechanical stress causes said free-moving portion to electrically couple with said output contact. 14. A nanometer-scale transistor comprising: a first input contact; a second input contact; a base member; a mounting assembly coupled to said base member; a nanometer-scale beam fixed to said mounting assembly and having a portion that is free-to-move, wherein said nanometer-scale beam is coupled to said first input contact and is provided a first charge; a charge member layer placed in the proximity of said free-moving portion, wherein said charge member layer is coupled to said second input contact, said charge member layer is provided a second charge, said first charge and said second charge interact to provide mechanical stress in said free-moving portion, and said first and second charges have opposite polarities; and an output contact, wherein said mechanical stress causes said free-moving portion to electrically couple with said output contact. 15. A nanometer-scale transistor comprising: a first input contact; a second input contact; a base member; a mounting assembly coupled to said base member; a nanometer-scale beam fixed to said mounting assembly and having a portion that is free-to-move, wherein said nanometer-scale beam is coupled to said first input contact and is provided a first charge; a charge member layer placed in the proximity of said free-moving portion, wherein said charge member layer is couple to said second input contact, said charge member layer is provided a second charge, said first charge and said second charge interact to provide mechanical stress in said free-moving portion; an output contact, wherein said mechanical stress causes said free-moving portion to electrically couple with said output contact; and an external light source wherein the amount of said mechanical stress is proportional to, at least in part, the magnitude of said second charge, said first charge, and said external light source. 16. An energy conversion system that is immersed in a working substance having a plurality of molecules that converts energy from one form to another, said system comprising: a first thermally conductive member; a second thermally conductive member; a first plurality of mounting points; a second plurality of mounting points, each of said second plurality of mounting points corresponding to one of said first plurality of mounting points; a plurality of nanometer members each of which is loosely mounted between one of said first and second pluralities of mounting points such that slack exists in each of said nanometer members, wherein Brownian motion causes said nanometer members to move; a plurality of resistive elements, each of which is thermally coupled to said first conductive member and is mounted between one of said first and second pluralities of mounting points such that there is a resistive element corresponding to each nanometer member; an external magnetic field that, when applied to said moving nanometer members, induces an electric field that induces current to flow; and a plurality of thermoelectric generators comprising first and second thermally responsive members, each of said first thermally responsive members being coupled to said first thermally conductive member, each of said second thermally responsive members being coupled to said second thermally conductive member.
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