[특허]Semiconductor device evaluation method and apparatus using the same

Elpida Memory, Inc.

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특허 상세정보

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내보내기 페이스북 공유 트위터 공유 카카오톡 공유

Semiconductor device evaluation method and apparatus using the same

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01R-031/305 G01R-031/28
미국특허분류(USC)	324/751; 324/501
출원번호	US-0042195 (2008-03-04)
등록번호	US-7495457 (2009-02-24)
우선권정보	JP-2007-055755(2007-03-06)
발명자 / 주소	Danbata,Masayoshi
출원인 / 주소	Elpida Memory, Inc.
대리인 / 주소	Sughrue Mion, PLLC
인용정보	피인용 횟수 : 0 인용 특허 : 4

초록
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In order to provide a semiconductor device evaluation method and a semiconductor device evaluation apparatus for correctly detecting an error position and providing a substrate for observing a cross section without difficulties, a transport unit of a SEM apparatus moves a substrate on a stage. A detection unit detects electric information of observed objects including an error position arranged on the substrate. A calculating unit calculates integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detects a first waveform obtained by calculating the integral in the first direction and detects a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of the other peaks, and wherein the second integral-waveform has peaks of substantially the same height. A control unit controls the transport unit so as to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that includes the error position and controls the calculating unit to count the peaks of the second waveform.

대표
청구항
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What is claimed is: 1. A semiconductor device evaluation method of a semiconductor device evaluation apparatus for evaluating observed objects including an error position arranged on a semiconductor substrate, comprising: a first step of detecting electric information of the observed object including the error; a second step of calculating integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detecting a first integral-waveform obtained by calculating the integral in the first direction and detecting a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a first peak which contains the array of the observed objects including the error position and is larger than at least one of other peaks, and wherein the second integral-waveform has peaks of substantially the same height; a third step of counting peaks of the second waveform caused while moving the semiconductor substrate in a direction for maintaining the peak of the first waveform that contains an array of the observed objects including the error position; and a fourth step of calculating a total number of the peaks regarding both vertical and lateral directions of the semiconductor substrate while the semiconductor substrate is moved from the error position to a predetermined reference position in the third step. 2. A semiconductor device evaluation method according to claim 1, further comprising: a fifth step of detecting the reference position on the semiconductor substrate; a sixth step of detecting electric information of the observed objects including the error position arranged on the semiconductor substrate; a seventh step of calculating integrals based on the electric information detected in the sixth step in at least third and fourth directions among directions in which arrays of the observed objects are arranged, detecting a third integral-waveform obtained by calculating the integral in the third direction and detecting a fourth waveform obtained by calculating the integral in the fourth direction, wherein the third waveform includes a third peak which contains an array of the observed objects including the error position and which is larger than at least one of other peaks, and wherein the fourth integral-waveform has peaks of substantially the same height; an eighth step of counting peaks of the fourth waveform while moving the semiconductor substrate from the reference position in a direction for maintaining the peak of the third waveform containing an array of the observed objects including the error position; a ninth step of conducting a counting operation of the eighth step in both the vertical and lateral directions of the semiconductor substrate, moving the semiconductor substrate until a total number of peaks in the vertical direction detected in the eighth step reaches a total number of peaks in the vertical direction obtained in the fourth step and a total number of peaks in the lateral direction detected in the eighth step reaches a total number of peaks in the lateral direction obtained in the fourth step; and a tenth step of processing the semiconductor substrate after a moving operation of the ninth step by radiating a focused ion beam. 3. A semiconductor device evaluation method according to claim 2 wherein, in the step 3, when the semiconductor substrate is moved in a direction for maintaining the peak of the second waveform containing the peak of the array of the observed objects including the error position, the direction is corrected in order to maintain the peak of the array of the observed objects including the error position maximum. 4. A semiconductor device evaluation apparatus for evaluating observed objects including an error position arranged on a semiconductor substrate, comprising: a transport unit for moving the semiconductor substrate; a first detection unit for detecting electric information of the observed objects including the error position arranged on the semiconductor substrate; a first calculating unit calculating integrals based on the electric information in at least first and second directions among directions in which arrays of the observed objects are arranged, detecting a first waveform obtained by calculating the integral in the first direction and detecting a second waveform obtained by calculating the integral in the second direction, wherein the first waveform includes a first peak which contains the array of the observed objects including the error position and is larger than at least one of other peaks, and wherein the second integral-waveform has peaks of substantially the same height; and a first control unit controlling the first transport unit to move the semiconductor substrate in a direction for maintaining the peak of the first waveform that contains the array of the observed objects including the error position based on a calculation result of the first calculating unit, wherein the first calculation unit counts peaks of the second waveform while moving the semiconductor substrate by the first transport unit, and regarding both vertical and lateral directions of the semiconductor substrate, calculates a total number of peaks detected while the semiconductor substrate is moved by the first transport unit from the error position to a predetermined reference position. 5. A semiconductor device evaluation apparatus according to claim 4, further comprising: a focused ion beam generation unit; a second transport unit for moving the semiconductor substrate; a second detection unit for detecting a reference position on the semiconductor substrate and detecting electric information of the observed objects including the error position arranged on the semiconductor substrate; a second calculating unit calculating integrals based on the electric information in at least third and fourth directions among directions in which arrays of the observed objects are arranged, detecting a third waveform obtained by calculating the integral in the third direction and detecting a fourth waveform obtained by calculating the integral in the fourth direction, wherein the third waveform includes a peak which contains the array of the observed objects including the error position and is larger than at least one of other peaks, and wherein the fourth waveform has peaks of substantially the same height; and a second control unit controlling the second transport unit to move the semiconductor substrate from the reference position in a direction for maintaining the peak of the third waveform that contains the array of the observed objects including the error position based on a calculation result of the second calculation unit, wherein when the second control unit controls the second transport unit to move the semiconductor substrate in a vertical direction and a lateral direction of the semiconductor substrate, the second calculation unit counts peaks of the waveform in the vertical direction caused by moving the semiconductor substrate in the lateral direction and counts peaks of the waveform in the vertical direction caused by moving the semiconductor substrate in the lateral direction; the second control unit controls the second transport unit to move the semiconductor substrate until a number of the peaks in the vertical direction counted by the second calculation unit reaches a total number of the peaks in the vertical direction counted by the first calculation unit, and until a number of the peaks in the lateral direction counted by the second calculation unit reaches a total number of the peaks in the lateral direction counted by the first calculation unit; and the focused ion beam generation unit processes the semiconductor substrate with focused ion beam after moving the semiconductor substrate by the second control unit. 6. A semiconductor device evaluation apparatus according to claim 4, wherein the second control unit, when the semiconductor substrate is moved in a direction for maintaining the peak of the first waveform that includes the error position, corrects the direction in order to maintain the peak of the array including the error position maximum.

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Semiconductor device evaluation method and apparatus using the same

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Semiconductor device evaluation method and apparatus using the same

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