초록 ▼

The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of bl

The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.

대표청구항 ▼

The invention claimed is: 1. A method for producing a thin film comprising: providing a first substrate having a face surface; introducing ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the m

The invention claimed is: 1. A method for producing a thin film comprising: providing a first substrate having a face surface; introducing ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the face surface to the microcavities, wherein the microcavities reside between solid bridges of the first substrate; bonding a second substrate to the face surface of the first substrate; and applying mechanical force to the thin layer through the second substrate to fracture the solid bridges. 2. The method of claim 1, wherein applying mechanical force to the thin layer comprises applying a mechanical force to the second substrate selected from the group consisting of tensile force, shear force, bending forces, and combinations thereof. 3. The method of claim 1, wherein applying mechanical force to the thin layer comprises applying a shear force to the second substrate. 4. The method of claim 1, wherein applying mechanical force to the thin layer comprises applying a tensile force to the second substrate. 5. The method of claim 1, further comprising applying mechanical force to the first substrate. 6. The method of claim 5, wherein applying mechanical force to the first substrate comprises applying mechanical force to the first substrate in an opposite direction from the mechanical force applied to thin layer. 7. The method of claim 5, wherein applying mechanical force to the thin layer comprises applying a shear stress to the solid bridges and a tensile stress between the first and second substrates. 8. The method of claim 1, wherein providing a first substrate having a face surface comprises providing a first substrate having one or more layers of materials on the face surface. 9. The method of claim 8, wherein the one or more layers of materials comprises a dielectric layer. 10. The method of claim 1, wherein bonding a second substrate to the face surface of the first substrate comprises bonding a silicon substrate having a dielectric layer thereon. 11. A method for producing a thin film comprising: providing a first substrate having a face surface; introducing ions into the first substrate at the face surface, such that microcavities are formed in the first substrate during or after introducing the ions, wherein the microcavities define a thin film layer extending from the face surface to the microcavities, wherein the microcavities reside between solid bridges of the first substrate; thermally treating the first substrate to coalesce the microcavities; bonding a second substrate to the face surface of the first substrate; and applying mechanical forces to fracture the solid bridges. 12. The method of claim 11, wherein introducing ions into the first substrate comprises maintaining the temperature of the first substrate at a temperature below the diffusion temperature of the ions in the first substrate. 13. The method of claim 10, wherein bonding a second substrate to the face surface of the first substrate comprises creating a bonding energy between the first and second substrates sufficient to resist the mechanical forces applied to fracture the solid bridges. 14. The method of claim 10, further comprising applying a physicochemical treatment to one or both of the face surface and a bonding surface of the second substrate prior to bonding the second substrate to the face surface of the first substrate. 15. A thin film comprising a thin layer of semiconductor material on a substrate, wherein the thin layer is defined by an interface between the thin layer and the substrate opposite from a cleaved surface, wherein the cleaved surface comprises microcavities residing between fractured regions of semiconductor material. 16. The thin film of claim 15, further comprising a dielectric layer on the substrate and wherein the interface is defined by an interface between the thin layer and the dielectric layer. 17. The thin film of claim 15, further comprising an electronic component in the thin layer in proximity to the interface between the thin layer and the substrate. 18. The thin film of claim 15, wherein the substrate comprises a plastic material. 19. The thin film of claim 15, wherein the substrate comprises a semiconductor material. 20. The thin film of claim 15, wherein the substrate comprises silicon. 21. A method for producing a thin film comprising the steps of: implanting hydrogen ions into a semiconductor material substrate through a face thereof so as to form a layer of microcavities with bridges connecting a thin film layer of desired thickness to a remaining portion of the semiconductor material substrate, the quantity of ions in the layer of microcavities being insufficient to produce fracture of the bridges throughout the layer of microcavities by a subsequent thermal annealing alone; conducting a subsequent thermal annealing of the semiconductor material substrate at sufficiently low temperature to substantially limit diffusion of gas from the semiconductor material substrate; and effecting the propagation of bridge fracture to sever the thin film layer from the remaining portion of the semiconductor material substrate through the application of an additional mechanical force. 22. The method of claim 21, further comprising bonding a second substrate to the face of the semiconductor material substrate. 23. The method of claim 21, wherein effecting the propagation of bridge fracture comprises a process occurring simultaneously with thermal annealing of the semiconductor material substrate. 24. The method of claim 21, wherein effecting the propagation of bridge fracture comprises a process carried out after thermal annealing of the semiconductor material substrate. 25. The method of claim 21, wherein effecting the propagation of bridge fracture comprises applying mechanical force to fracture the bridges. 26. The method of claim 25, further comprising bonding a second substrate to the face of the semiconductor material substrate, wherein applying mechanical force comprises applying a shear stress to the bridges and a tensile stress between the semiconductor material substrate and the second substrate.