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Methods of fabricating silicon carbide crystals

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C30B-028/12    C30B-028/00   
미국특허분류(USC) 117/084; 117/088; 117/094; 117/097; 117/911; 117/951
출원번호 US-0542987 (2006-10-04)
등록번호 US-7501022 (2009-03-10)
발명자 / 주소
  • Mueller,Stephan
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel Sibley & Sajovec
인용정보 피인용 횟수 : 1  인용 특허 : 48
초록
▼

Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystal...

대표
청구항
▼

That which is claimed is: 1. A method of producing a silicon carbide boule having a substantially single polytype, the method comprising: forcing preferential nucleation sites on a surface of a silicon carbide seed crystal having the substantially single polytype to a predefined pattern; and growing the silicon carbide boule utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide on the silicon carbide seed crystal corresponding to the predefined pattern; wherein forcing preferential nucleation sites co...

인용문헌 (48)

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  3. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Colorless silicon carbide crystals.
  4. Cline Harvey E. (Schenectady NY) Anthony Thomas R. (Schenectady NY), Deep buried layers for semiconductor devices.
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  7. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  8. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  9. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  10. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride from a melt.
  11. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride from a melt.
  12. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride: silicon carbide alloys.
  13. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Growth of colorless silicon carbide crystals.
  14. Morrison Andrew D. (Altadena CA) Daud Taher (LaCrescenta CA), Low defect, high purity crystalline layers grown by selective deposition.
  15. Palmour John W. (Raleigh NC), Metal-insulator-semiconductor capacitor formed on silicon carbide.
  16. Yonehara Takao,JPX ; Naruse Yasuhiro,JPX, Method for forming crystal and crystal article obtained by said method.
  17. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method for growing a silicon carbide single crystal.
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  19. Stein Ren (Rttenbach DEX), Method for manufacturing single-crystal silicon carbide.
  20. Stein Rene,DEX ; Rupp Roland,DEX ; Volkl Johannes,DEX, Method for producing silicon carbide monocrystals.
  21. Vichr Miroslav ; Hoover David Samuel, Method for the growth of industrial crystals.
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  26. Stein Rene,DEX ; Rupp Roland,DEX, Method of producing boron-doped monocrystalline silicon carbide.
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  30. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.
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  33. Kitoh Yasuo,JPX ; Suzuki Masahiko,JPX ; Sugiyama Naohiro,JPX, Process for growing single crystal.
  34. Suzuki Akira (Nara JPX) Furukawa Katsuki (Osaka JPX), Process for producing a single-crystal substrate of silicon carbide.
  35. Hunter Charles Eric, Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy.
  36. Hunter Charles Eric, Production of bulk single crystals of silicon carbide.
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  39. Hunter Charles Eric, Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys.
  40. Tanino Kichiya,JPX, Single crystal SIC and a method of producing the same.
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  45. Tanino Kichiya,JPX, Single crystal and method of producing the same.
  46. Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX), Sublimation growth of single crystal SiC.
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이 특허를 인용한 특허 (1)

  1. Urakami, Yasushi; Adachi, Ayumu; Gunjishima, Itaru, Manufacturing method of silicon carbide single crystal.

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