초록 ▼

A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily

A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

대표청구항 ▼

The invention claimed is: 1. A semiconductor device comprising: a single crystal substrate primarily including zinc oxide and having a zinc-polar surface and an oxygen-polar surface; and at least one layer of thin film primarily including zinc oxide disposed on the zinc-polar surface; wherein the a

The invention claimed is: 1. A semiconductor device comprising: a single crystal substrate primarily including zinc oxide and having a zinc-polar surface and an oxygen-polar surface; and at least one layer of thin film primarily including zinc oxide disposed on the zinc-polar surface; wherein the at least one layer of thin film includes a multilayer film and the multilayer film defines a light-emitting layer; the multilayer film includes an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer and a p-type contact layer; and the n-type contact layer is a zinc oxide layer that is in contact with the zinc-polar surface of the single crystal substrate. 2. The semiconductor device according to claim 1, wherein the at least one layer of thin film has zinc-polarity. 3. The semiconductor device according to claim 1, further comprising a transparent electrode disposed on the multilayer film. 4. The semiconductor device according to claim 3, wherein the transparent electrode is made of Indium Tin Oxide. 5. A method for manufacturing a semiconductor device, comprising the steps of: determining whether a surface of a single crystal substrate primarily including zinc oxide is a zinc-polar surface or an oxygen-polar surface; and forming at least one layer of thin film primarily including zinc oxide on the zinc-polar surface; wherein the at least one layer of thin film includes a multilayer film and the multilayer film defines a light-emitting layer; the multilayer film includes an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer and a p-type contact layer; and the n-type contact layer is a zinc oxide layer that is in contact with the zinc-polar surface of the single crystal substrate. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the thin film has zinc-polarity. 7. The method for manufacturing a semiconductor device according to claim 5, further comprising the steps of: providing a sputtering apparatus provided with a plasma generation chamber and a separate film formation chamber; and performing sputtering treatment using the sputtering apparatus so as to form the thin film. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the sputtering treatment is performed by a method selected from the group consisting of an electron cyclotron resonance plasma sputtering method, an inductively coupled plasma sputtering method, a helicon wave excited plasma sputtering method, an ion beam sputtering method, and a cluster beam sputtering method. 9. The method for manufacturing a semiconductor device according to claim 5, wherein the thin film is formed by a method selected from the group consisting of a molecular-beam epitaxy method, a metal organic chemical vapor deposition method, a laser molecular-beam epitaxy method, and a laser abrasion method.