초록 ▼

A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to

A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.

대표청구항 ▼

What is claimed is: 1. A method of fabricating a light emitting semiconductor device of a type which emits light in the ultra violet wavelengths from a first surface at which an Al2O3 substrate was originally located comprising: forming a GaN buffer layer over and in contact with said Al2O3 substra

What is claimed is: 1. A method of fabricating a light emitting semiconductor device of a type which emits light in the ultra violet wavelengths from a first surface at which an Al2O3 substrate was originally located comprising: forming a GaN buffer layer over and in contact with said Al2O3 substrate so as to create a bond at the interface between said GaN layer and said Al2O3 substrate; forming a GaN/AlN short period superlattice layer over and in contact with said GaN buffer layer; forming cladding and multiple-quantum-well active layers over said Ga/AlN short period superlattice layer; securing the semiconductor device to a heat sink substrate on a second surface of the semiconductor device opposite said first surface; weakening the bond between the GaN layer and the Al2O3 substrate by irradiating, through the Al2O3 substrate, the interface between the GaN layer and the Al2O3 substrate; physically removing the Al2O3 substrate to thereby expose a surface of the GaN layer; applying a planarizing coating over and in physical contact with the exposed surface of the GaN layer; etching the planarized coating and GaN layer to at least significantly remove both; and etching said GaN/AlN short period superlattice layer such that it is substantially removed to thereby permit access to a surface exposed by said etching of said GaN/AlN short period superlattice layer; to thereby produce said light emitting semiconductor device having said heat sink substrate located at said second surface, and light emission through said first surface. 2. The method of claim 1, further comprising, following the step of etching said GaN/AlN short period superlattice layer, forming at least one additional layer over and in physical contact with a surface exposed by said etching of said GaN/AlN short period superlattice layer. 3. The method of claim 1, wherein said planarizing coating is photoresist, which is spun onto the exposed surface of the GaN layer. 4. The method of claim 1, further comprising a step of polishing the planarized coating prior to etching.