초록 ▼

The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the

The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

대표청구항 ▼

What we claim is: 1. A solution for application of a sub-micron thick gallium (Ga) containing film on a conductor comprising: a gallium (Ga) salt, a complexing agent selected from the group consisting of a citrate, ethylenediaminetetraacetic acid (EDTA), and glycine, and a solvent, and wherein the

What we claim is: 1. A solution for application of a sub-micron thick gallium (Ga) containing film on a conductor comprising: a gallium (Ga) salt, a complexing agent selected from the group consisting of a citrate, ethylenediaminetetraacetic acid (EDTA), and glycine, and a solvent, and wherein the pH of the solution is higher than 7.0. 2. The solution of claim 1 wherein the solution provides electrodeposition of the sub-micron thick gallium (Ga) containing film on the conductor and the gallium (Ga) containing film is a substantially pure gallium (Ga) film. 3. The solution of claim 1 wherein the gallium (Ga) salt is selected from the group consisting of gallium (Ga)-chloride, gallium (Ga)-sulfate, gallium (Ga)-acetate and gallium (Ga)-nitrate. 4. The solution of claim 3 wherein the citrate is at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate, wherein the solvent is water and wherein the pH value of the solution is in the range of 9-14. 5. The solution of claim 3 wherein the citrate is at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate. 6. The solution of claim 5 wherein the solvent is water. 7. The solution of claim 1 wherein the citrate is at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate. 8. The solution of claim 1 wherein the solvent is water. 9. The solution of claim 1 further comprising an organic additive. 10. The solution of claim 1 further comprising at least one of a copper (Cu) salt and an indium (In) salt. 11. The solution according to claim 10 wherein the pH of the solution is within a range of 9-14. 12. The solution of claim 10 wherein the solution is essentially free of any Group VIA elements and compounds thereof. 13. The solution of claim 1 further comprising both of a copper (Cu) salt and an indium (In) salt. 14. The solution of claim 13 wherein the pH of the solution is within a range of 9-14. 15. The solution of claim 13 wherein the solution is essentially free of any Group VIA elements and compounds thereof. 16. The solution of claim 1 further comprising a pH adjustment agent that is one of NaOH and KOH. 17. A method of obtaining a gallium (Ga) containing film on a surface of a conductor comprising the steps of: obtaining a solution that includes a gallium (Ga) salt, a complexing agent, and a solvent, wherein the solution has a pH higher than 7.0, and wherein the complexing agent is selected from the group consisting of a citrate, ethylenediaminetetraacetic acid (EDTA), and glycine; applying the solution onto an anode and the surface of the conductor, providing a potential difference between the anode and the conductor, and electrodepositing the gallium (Ga) containing film on the surface of the conductor. 18. The method of claim 17 wherein the gallium (Ga) containing film is a substantially pure gallium (Ga) film. 19. The method of claim 17 wherein the conductor is copper. 20. The method of claim 17 wherein the conductor is indium. 21. The method according to claim 17 wherein the pH of the solution is within a range of 9-14. 22. The method of claim 17 wherein the solution obtained in the step of obtaining includes the gallium (Ga) salt selected from the group consisting of gallium (Ga)-chloride, gallium (Ga)-sulfate, gallium (Ga)-acetate and gallium (Ga)-nitrate. 23. The method of claim 22 wherein the solution obtained in the step of obtaining includes as the citrate at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate, wherein the solvent is water and wherein the pH value of the solution is in the range of 9-14. 24. The method of claim 17 wherein the solution obtained in the step of obtaining includes as the citrate at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate. 25. The method of claim 17 wherein the conductor is one of copper and indium, and wherein the solution obtained in the step of obtaining includes as the citrate at least one of sodium citrate, lithium citrate, ammonium citrate, potassium citrate, and an organically modified citrate. 26. The method of claim 25 wherein the solution obtained in the step of obtaining includes water as the solvent. 27. The method of claim 17 wherein the solution obtained in the step of obtaining includes water as the solvent. 28. The method of claim 17 wherein the solution obtained in the step of obtaining further includes an organic additive. 29. The method of claim 17 wherein the solution obtained in the step of obtaining further includes at least one of a copper (Cu) salt and an indium (In) salt. 30. The method according to claim 29 wherein the pH of the solution is within a range of 9-14. 31. The method of claim 30 wherein the solution obtained in the step of obtaining is essentially free of any Group VIA elements and compounds thereof. 32. The method of claim 17 wherein the solution obtained in the step of obtaining further includes both a copper (Cu) salt and an indium (In) salt. 33. The method according to claim 32 wherein the pH of the solution is within a range of 9-14. 34. The method of claim 33 wherein the solution obtained in the step of obtaining is essentially free of any Group VIA elements and compounds thereof.