초록 ▼

An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the

An ultra lightweight semiconductor device such as a photovoltaic device is fabricated on a non-etchable barrier layer which is disposed upon an etchable substrate. The device is contacted with an appropriate etchant for a period of time sufficient to remove at least a portion of the thickness of the substrate. The barrier layer prevents damage to the photovoltaic material during the etching process. Photovoltaic devices fabricated by this method have specific power levels in excess of 300 w/kg.

대표청구항 ▼

The invention claimed is: 1. A method of making a lightweight photovoltaic device, said method comprising the steps of: providing a substrate comprised of a ferrous alloy material which is etchable by an acidic etchant composition; disposing a barrier layer on said substrate, said barrier layer com

The invention claimed is: 1. A method of making a lightweight photovoltaic device, said method comprising the steps of: providing a substrate comprised of a ferrous alloy material which is etchable by an acidic etchant composition; disposing a barrier layer on said substrate, said barrier layer comprised of a material which is not etchable by said etchant said material being selected from the group consisting of titanium, molybdenum and combinations thereof; disposing a body of photovoltaically active material, which includes at least one thin film layer of an alloy of silicon and hydrogen, which optionally includes at least one doping element, on said barrier layer; and etching away at least a portion of the thickness of the substrate by contacting said substrate with said etchant. 2. The method of claim 1, wherein said body of photovoltaically active material includes at least one triad comprised of a layer of substantially intrinsic semiconductor material interposed between oppositely doped layers of a semiconductor material. 3. The method of claim 1, including the further step of disposing a layer of a light reflective material atop said barrier layer prior to the step of disposing said body of photovoltaically active material thereupon. 4. The method of claim 1, wherein said barrier layer is comprised of a metal. 5. The method of claim 1, wherein the step of etching comprises etching away at least a portion of the thickness of the substrate in preselected areas of said substrate, so that in areas which have not been preselected, the resultant thickness of the substrate is greater than it is in the areas which have been selected. 6. The method of claim 1, including the further step of encapsulating at least a portion of said lightweight photovoltaic device in electrical communication with said body of photovoltaically active material. 7. The method of claim 1, including the further step of encapsulating at least a portion of said lightweight photovoltaic device in a protective material. 8. A method of making a lightweight, thin film photovoltaic device, said method comprising the steps of providing a substrate member, comprised of a ferrous alloy; disposing a barrier layer on said substrate, said barrier layer being comprised of a material selected from the group consisting of titanium, molybdenum, carbon, a ceramic, a cermet, and combinations thereof; providing an acidic etchant material which is capable of etching said substrate and not said barrier layer; disposing a body of photovoltaically active, thin film semiconductor material on said barrier layer, said body of photovoltaically active material including at least one triad comprised of a body of substantially intrinsic semiconductor material interposed between oppositely doped layers of semiconductor material; and contacting said substrate with said etchant so as to etch away at least a portion of the thickness of said substrate. 9. The method of claim 8, including the further step of disposing a layer of a light reflective material atop said barrier layer prior to the step of disposing said body of photovoltaically active material thereupon. 10. The method of claim 8, comprising etching away all of the thickness of the substrate.