A technique for manufacturing a light-emitting device by using a method of forming a thin film having a highly uniform thickness with high throughput is provided. The technique includes the steps of filling a small molecular organic electroluminescence material into an evaporation cell that has an o
A technique for manufacturing a light-emitting device by using a method of forming a thin film having a highly uniform thickness with high throughput is provided. The technique includes the steps of filling a small molecular organic electroluminescence material into an evaporation cell that has an orifice-like evaporation material ejecting port, and heating the small molecular organic electroluminescence material in an inert gas atmosphere to form a light emitting layer on a substrate from the small molecular organic electroluminescence material.
대표청구항▼
What is claimed is: 1. A method of manufacturing a light-emitting device, comprising the steps of: forming a first thin film transistor for switching a first pixel and a second thin film transistor for switching a second pixel adjacent to the first pixel over a substrate; forming a first pixel elec
What is claimed is: 1. A method of manufacturing a light-emitting device, comprising the steps of: forming a first thin film transistor for switching a first pixel and a second thin film transistor for switching a second pixel adjacent to the first pixel over a substrate; forming a first pixel electrode electrically connected to the first thin film transistor and a second pixel electrode electrically connected to the second thin film transistor; forming a bank between the first pixel electrode and the second pixel electrode; preparing a first evaporation cell filled with a first organic electroluminescence material and a second evaporation cell filled with a second organic electroluminescence material; and evaporating the first and the second organic electroluminescence materials in an inert gas atmosphere at an atmospheric pressure by heating the first and the second evaporation cells which are controlled by a heating means so that a first light emitting layer pattern comprising the first organic electroluminescence material is formed over the first pixel electrode without using a mask and a second light emitting layer pattern comprising the second organic electroluminescence material is formed over the second pixel electrode without using a mask, wherein the first light emitting layer pattern is electrically connected to the first pixel electrode and the second light emitting layer pattern is electrically connected to the second pixel electrode; wherein each of the first and the second evaporation cells comprises a first portion and a second portion having an inner diameter smaller than that of the first portion, and wherein the first and the second organic electroluminescence materials are ejected from an end portion of the second portion. 2. A method of manufacturing a light-emitting device as claimed in claim 1, wherein the light-emitting device is a device selected from the group of: a personal computer, a video camera, a goggle-type display, a digital camera and a cellular phone. 3. A method of manufacturing a light-emitting device as claimed in claim 1, wherein the first and the second organic electroluminescence materials are small molecule materials. 4. A method of manufacturing a light-emitting device as claimed in claim 1, wherein the inert gas comprises argon. 5. A method of manufacturing a light-emitting device according to claim 1, wherein each of the first and the second evaporation cells comprises a material selected from the group consisting of boron nitride, alumina and tungsten. 6. The method of manufacturing a light-emitting device according to claim 1 wherein the first and the second light emitting layer patterns are directly deposited from the first and the second evaporation cells respectively. 7. A method of manufacturing a light-emitting device according to claim 1, wherein each of the first and the second light emitting layer patterns has a width of about 50 to 200 μm. 8. A method of manufacturing a light-emitting device according to claim 1, wherein a diameter of the second portion is several tens to several hundreds μm. 9. A method of manufacturing a light-emitting device, comprising the steps of: forming a first thin film transistor for switching a first pixel and a second thin film transistor for switching a second pixel adjacent to the first pixel over a substrate; forming a first pixel electrode electrically connected to the first thin film transistor and a second pixel electrode electrically connected to the second thin film transistor; forming a bank between the first pixel electrode and the second pixel electrode; placing in a reaction chamber a first evaporation cell containing a first organic electroluminescence material and a second evaporation cell containing a second organic electroluminescence material, and placing a shutter above the first and the second evaporation cells; and evaporating the first and the second organic electroluminescence materials in an inert gas atmosphere at an atmospheric pressure by heating the first and the second evaporation cells which are controlled by a heating means so that a first light emitting layer pattern comprising the first organic electroluminescence material is formed over the first pixel electrode without using a mask by opening and closing the shutter and a second light emitting layer pattern comprising the second organic electroluminescence material is formed over the second pixel electrode without using a mask by opening and closing the shutter, wherein the first light emitting layer pattern is electrically connected to the first pixel electrode and the second light emitting layer pattern is electrically connected to the second pixel electrode; wherein the heating means is placed outside the reaction chamber; wherein each of the first and the second evaporation cells comprises a first portion and a second portion having an inner diameter smaller than that of the first portion, and wherein the first and the second organic electroluminescence materials are ejected from an end portion of the second portion. 10. A method of manufacturing a light-emitting device as claimed in claim 9, wherein the light-emitting device is a device selected from the group of: a personal computer, a video camera, a goggle-type display, a digital camera and a cellular phone. 11. A method of manufacturing a light-emitting device as claimed in claim 9, wherein the first and the second organic electroluminescence materials are small molecule materials. 12. A method of manufacturing a light-emitting device as claimed in claim 9, wherein the inert gas comprises argon. 13. A method of manufacturing a light-emitting device according to claim 9, wherein each of the first and the second evaporation cells comprises a material selected from the group consisting of boron nitride, alumina and tungsten. 14. A method of manufacturing a light-emitting device according to claim 9, wherein a diameter of the second portion is several tens to several hundreds μm. 15. The method of manufacturing a light-emitting device according to claim 9 wherein the first and the second light emitting layer patterns are directly deposited from the first and the second evaporation cells respectively. 16. A method of manufacturing a light-emitting device according to claim 9, wherein each of the first and the second light emitting layer patterns has a width of about 50 to 200 μm. 17. A method of manufacturing a light-emitting device, comprising the steps of: forming a first thin film transistor for switching a first pixel and a second thin film transistor for switching a second pixel adjacent to the first pixel over a substrate; forming a first pixel electrode electrically connected to the first thin film transistor and a second pixel electrode electrically connected to the second thin film transistor; forming a bank between the first pixel electrode and the second pixel electrode; preparing a first evaporation cell filled with a first organic electroluminescence material and a second evaporation cell filled with a second organic electroluminescence material; evaporating the first and the second organic electroluminescence materials in an inert gas atmosphere at an atmospheric pressure by heating the first and the second evaporation cells which are controlled by a heating means so that a first light emitting layer pattern comprising the first organic electroluminescence material is formed over the first pixel electrode without using a mask and a second light emitting layer pattern comprising the second organic electroluminescence material is formed over the second pixel electrode without using a mask; and moving the first and the second evaporation cells and the substrate relative to each other, wherein the first light emitting layer pattern is electrically connected to the first pixel electrode and the second light emitting layer pattern is electrically connected to the second pixel electrode; wherein each of the first and the second evaporation cells comprises a first portion and a second portion having an inner diameter smaller than that of the first portion, and wherein the first and the second organic electroluminescence materials are ejected from an end portion of the second portion. 18. A method of manufacturing a light-emitting device according to claim 17, wherein the first and the second evaporation cells are moved. 19. A method of manufacturing a light-emitting device according to claim 17, wherein each of the first and the second evaporation cells comprises a material selected from the group consisting of boron nitride, alumina and tungsten. 20. A method of manufacturing a light-emitting device according to claim 17, wherein the substrate is moved in X-Y directions. 21. A method of manufacturing a light-emitting device according to claim 17, wherein each of the first and the second light emitting layer patterns has a width of about 50 to 200 μm. 22. A method of manufacturing a light-emitting device according to claim 17, wherein a diameter of the second portion is several tens to several hundreds μm. 23. A method of manufacturing a light-emitting device, comprising the steps of: forming a first thin film transistor for switching a first pixel and a second thin film transistor for switching a second pixel adjacent to the first pixel over a substrate; forming a first pixel electrode electrically connected to the first thin film transistor and a second pixel electrode electrically connected to the second thin film transistor; forming a bank between the first pixel electrode and the second pixel electrode; placing in a reaction chamber a first evaporation cell containing a first organic electroluminescence material and a second evaporation cell containing a second organic electroluminescence material, and placing a shutter above the first and the second evaporation cells; evaporating the first and the second organic electroluminescence materials in an inert gas atmosphere at an atmospheric pressure by heating the first and the second evaporation cells which are controlled by a heating means so that a first light emitting layer pattern comprising the first organic electroluminescence material is formed over the first pixel electrode without using a mask by opening and closing the shutter and a second light emitting layer pattern comprising the second organic electroluminescence material is formed over the second pixel electrode without using a mask by opening and closing the shutter; and moving the first and the second evaporation cells and the substrate relative to each other, wherein the first light emitting layer pattern is electrically connected to the first pixel electrode and the second light emitting layer pattern is electrically connected to the second pixel electrode; wherein the heating means is placed outside the reaction chamber; wherein each of the first and the second evaporation cells comprises a first portion and a second portion having an inner diameter smaller than that of the first portion, and wherein the first and the second organic electroluminescence materials are ejected from an end portion of the second portion. 24. A method of manufacturing a light-emitting device according to claim 23, wherein the first and the second evaporation cells are moved. 25. A method of manufacturing a light-emitting device according to claim 23, wherein each of the first and the second evaporation cells comprises a material selected from the group consisting of boron nitride, alumina and tungsten. 26. A method of manufacturing a light-emitting device according to claim 23, wherein a diameter of the second portion is several tens to several hundreds μm. 27. A method of manufacturing a light-emitting device according to claim 23, wherein the substrate is moved in X-Y directions. 28. A method of manufacturing a light-emitting device according to claim 23, wherein each of the first and the second light emitting layer patterns has a width of about 50 to 200 μm.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (84)
Takemura Yasuhiko,JPX, Active matrix device with two TFT's per pixel driven by a third TFT with a crystalline silicon channel.
Tsubaki, Kenji; Kido, Junji; Kishigami, Yasuhisa; Kondo, Yukihiro, Apparatus for and method of vacuum vapor deposition and organic electroluminescent device.
McKee Rodney Allen ; Walker Frederick Joseph, Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment.
William C. Shakespeare ; Michael G. Yang ; Rajeswari Sundaramoorthi ; Regine Bohacek ; Charles Joseph Eyermann ; Tomi K. Sawyer, Bicyclic signal transduction inhibitors, compositions containing them & uses thereof.
Harrah Larry A. (Albuquerque NM) Mead Keith E. (Peralta NM) Smith Henry M. (Overland Park KS granted to U.S. Department of Energy under the provisions of 42 U.S.C. 2182), Combination moisture and hydrogen getter.
Feuerstein Albert (Neuberg DEX) Thorn Gernot (Hanau am Main DEX) Ranke Horst (Filderstadt DEX), Method and system for a vacuum evaporative deposition process.
Spitzer Mark B. (Sharon MA) Salerno Jack P. (Waban MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Mansfield MA) Vu Duy-Phach (Taunton MA) Zavracky Paul M. (Norwood MA), Method for manufacturing a semiconductor device using a circuit transfer film.
Begin Robert G. (Montecito CA) Clarke Peter J. (Santa Barbara CA), Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus.
Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multi-chamber integrated process system.
Onitsuka Osamu,JPX ; Ebisawa Akira,JPX ; Suzuki Mitsunari,JPX ; Yamamoto Hiroshi,JPX ; Arai Michio,JPX, Organic electroluminescent display device, and method and system for making the same.
Tanabe Hiroshi,JPX ; Yamamoto Hiroshi,JPX ; Fukuyu Kengo,JPX ; Onitsuka Osamu,JPX, System and process for fabricating an organic electroluminescent display device.
Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing apparatus.
Kim, In Hwan; Byun, Seung Chan; Choi, Jin Chul; Kim, Jin Hyoung; Lee, Sang Keun, Electro-luminescence pixel, panel with the pixel, and device and method for driving the panel.
Kim, In Hwan; Byun, Seung Chan; Choi, Jin Chul; Kim, Jin Hyoung; Lee, Sang Keun, Electro-luminescence pixel, panel with the pixel, and device and method for driving the panel.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.