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A composition for forming a gap-filling material for lithography which, as a gap-filling material for lithography superior in planarization ability on a substrate having irregularities such as holes or trenches, causing no intermixing with a resist layer, and having a high dry etching rate as compar

A composition for forming a gap-filling material for lithography which, as a gap-filling material for lithography superior in planarization ability on a substrate having irregularities such as holes or trenches, causing no intermixing with a resist layer, and having a high dry etching rate as compared with the resist, is used in producing semiconductor devices by a method using the gap-filling material to cover the resist on the substrate having holes having an aspect ratio, defined as height/diameter, of 1 or more to transfer images onto the substrate by utilization of lithographic process, the composition being used to coat the substrate prior to the coating of the resist so as to planarize the substrate surface, and the composition being characterized by containing a polymer solution consisting of a polymer and a solvent.

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The invention claimed is: 1. A method for applying a composition to a substrate for forming a gap-filling material, wherein the composition comprises a polymer solution comprising a polymer and a solvent and has a coefficient H of 0.046 or less, which is defined as (logarithmic change in viscosity

The invention claimed is: 1. A method for applying a composition to a substrate for forming a gap-filling material, wherein the composition comprises a polymer solution comprising a polymer and a solvent and has a coefficient H of 0.046 or less, which is defined as (logarithmic change in viscosity (mPas))/(change in solid content concentration (% by weight)) and a viscosity of 1 to 80 mPas which is measured at a solid content concentration of 25% by weight; a cross-linking agent having at least two cross-linking forming functional groups; and a cross-linking catalyst, wherein the solvent comprises two or more solvents, comprising 20 to 80% by weight of a high boiling point solvent having a boiling point of 145° to 220° C. and having a boiling point that is 10° C. or more higher than a glass transition temperature of the polymer based on the whole solvent, wherein the method comprises: applying the composition to a substrate having holes with an aspect ratio of 1 or more, which is defined as height/diameter, and drying the composition to form a planarized filling layer on the substrate, and wherein the polymer is a homopolymer comprised of the repeating unit represented by Formula (1) wherein R1 and R2 each independently represent a hydrogen atom, a methyl group, a fluorine atom, a chlorine atom, a bromine atom or a cyano group, or a copolymer comprised of the repeating unit represented by Formula (1) and a repeating unit which is a vinyl group that contains an aromatic moiety or a carboxylic acid ester moiety on a side chain thereof wherein a weight-average molecular weight of the polymer is from 500 to 30000, wherein the repeating unit represented by Formula (I) is present in an amount of 20% or more based on the total number of repeating units in the polymer. 2. The method according to claim 1, characterized in that the boiling point of the solvent(s) is from 145 to 220° C. 3. The method according to claim 1, characterized in that the solvent(s) is butyl lactate, propylene glycol monobutylether, propylene glycol monomethylether acetate, cyclohexanone, diethylene glycol monomethylether, or any mixture thereof. 4. The method according to claim 1, characterized in that the polymer is poly p-vinylphenol that comprises a repeating unit represented by Formula (2): 5. The method according to claim 1, characterized in that the polymer is a bromide of poly p-vinylphenol, which comprises a repeating unit represented by Formula (3): 6. The method according to claim 1, characterized in that the polymer is a copolymer of p-vinylphenol and styrene, which comprises a repeating unit represented by Formula (2): and a repeating unit represented by Formula (4): and in which 20% or more of the repeating unit represented by Formula (2) is contained based on the total number of the repeating units in the polymer. 7. The method according to claim 1, characterized in that the polymer is a copolymer of p-vinylphenol and methyl methacrylate, which comprises a repeating unit represented by Formula (2): and a repeating unit represented by Formula (5): and in which 20% or more of the repeating unit represented by Formula (2) is contained based on the total number of the repeating units in the polymer. 8. The method according to claim 1, characterized in that the polymer is a copolymer of p-vinylphenol and 2-hydroxyethyl methacrylate, which comprises a repeating unit represented by Formula (2): and a repeating unit represented by Formula (6): and in which 20% or more of the repeating unit represented by Formula (2) is contained based on the total number of the repeating units in the polymer. 9. The method according to claim 1, characterized in that the polymer is a copolymer of p-vinylphenol and butyl acrylate, which comprises a repeating unit represented by Formula (2): and a repeating unit represented by Formula (7): and in which 20% or more of the repeating unit represented by formula (2) is contained based on the total number of the repeating units in the polymer. 10. The method according to claim 1, wherein the cross-linking agent is a methyoxymethylated glycoluril compound or methoxymethylated melamine compound. 11. The method according to claim 1, wherein the cross-linking catalyst is p-toluenesulfonic acid or pyridium-p-toluenesulfonic acid. 12. A method of manufacturing a semiconductor device forming an integrated circuit element by transferring an image on a substrate, comprising: (A) applying a gap-filling material to a substrate having holes with an aspect ratio of 1 or more, which is defined as height/diameter, wherein the gap-filling material comprises a polymer solution comprising a polymer and a solvent and having a coefficient H of 0.046 or less, which is defined as (logarithmic change in viscosity (mPas))/(change in solid content concentration (% by weight)) and a viscosity of 1 to 80 mPas which is measured at a solid content concentration of 25% by weight, a cross-linking agent having at least two cross-linking forming functional groups, and a cross-linking catalyst; (B) drying the polymer solution to form a planarized layer comprising gap-filling material on the substrate; (C) forming a bottom anti-reflective coating on said planarized layer; (D) applying a resist to said bottom anti-reflective coating; and (E) performing an exposure, a development, and an etching on the substrate, wherein the solvent comprises two or more solvents, comprising 20 to 80% by weight of a high boiling point solvent having a boiling point of 145° to 220° C. and having a boiling point that is 10° C. or more higher than a glass transition temperature of the polymer based on the whole solvent, wherein the polymer is a homopolymer comprised of the repeating unit represented by Formula (1) wherein R1 and R2 each independently represent a hydrogen atom, a methyl group, a fluorine atom, a chlorine atom, a bromine atom or a cyano group, or a copolymer comprised of the repeating unit represented by Formula (1) and a repeating unit which is a vinyl group that contains an aromatic moiety or a carboxylic acid ester moiety on a side chain thereof, wherein a weight-average molecular weight of the polymer is from 500 to 30000, wherein the repeating unit represented by Formula (I) is present in an amount of 20% or more based on the total number of repeating units in the polymer.