Semiconductor devices and semiconductor device assemblies including a nonconfluent spacer layer
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-025/065
H01L-023/02
출원번호
UP-0939253
(2001-08-24)
등록번호
US-7518223
(2009-07-01)
발명자
/ 주소
Derderian, James M.
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
TraskBritt
인용정보
피인용 횟수 :
6인용 특허 :
52
초록▼
A semiconductor device that includes at least one nonconfluent spacer layer on at least one surface thereof. The at least one nonconfluent spacer layer at least partially spaces the surface of the semiconductor device apart from another semiconductor device assembled in stacked arrangement therewith
A semiconductor device that includes at least one nonconfluent spacer layer on at least one surface thereof. The at least one nonconfluent spacer layer at least partially spaces the surface of the semiconductor device apart from another semiconductor device assembled in stacked arrangement therewith. Adjacent stacked semiconductor devices may include abutting nonconfluent spacer layers which together define a distance between opposed surfaces of the semiconductor devices. Each nonconfluent spacer layer includes voids therein that communicate with an exterior periphery of the layer to facilitate the lateral introduction of adhesive or encapsulant material into the layer and between the adjacent, stacked semiconductor devices. Multi-chip modules are also disclosed, as are methods for forming the nonconfluent spacer layers and assembly and packaging methods.
대표청구항▼
What is claimed is: 1. A semiconductor device for use in a stacked multi-chip assembly, comprising: a semiconductor die; and a dielectric spacer layer secured to at least a portion of a surface of the semiconductor die and protruding from the surface to space the semiconductor die substantially a p
What is claimed is: 1. A semiconductor device for use in a stacked multi-chip assembly, comprising: a semiconductor die; and a dielectric spacer layer secured to at least a portion of a surface of the semiconductor die and protruding from the surface to space the semiconductor die substantially a predetermined distance from an adjacent semiconductor die to accommodate a height of at least one intermediate conductive element that includes a bonding portion secured to a contact of the semiconductor die and a laterally extending portion located between and electrically isolated from an active surface of the semiconductor die and a back side of the adjacent semiconductor die, the dielectric spacer layer including voids communicating with a lateral periphery thereof. 2. The semiconductor device of claim 1, wherein the dielectric spacer layer comprises a plurality of laterally discrete spacers. 3. The semiconductor device of claim 1, further comprising: at least one discrete conductive element protruding above a surface of the semiconductor die. 4. The semiconductor device of claim 3, wherein the at least one discrete conductive element comprises one of a bond wire, a thermocompression bonded lead, and a tape-automated bond element. 5. The semiconductor device of claim 1, wherein the predetermined distance exceeds a distance a discrete conductive element protrudes above a surface of at least one of the semiconductor die and the adjacent semiconductor die. 6. The semiconductor device of claim 1, wherein the predetermined distance is about the same as or less than a distance a discrete conductive element protrudes above a surface of at least one of the semiconductor die and the adjacent semiconductor die. 7. The semiconductor device of claim 1, wherein the dielectric spacer layer covers only a portion of the surface. 8. The semiconductor device of claim 7, wherein the dielectric spacer layer comprises a pattern. 9. The semiconductor device of claim 7, wherein the dielectric spacer layer comprises randomly arranged features. 10. The semiconductor device of claim 1, wherein the dielectric spacer layer comprises a material that will adhere to a surface of the adjacent semiconductor die. 11. The semiconductor device of claim 1, wherein the dielectric spacer layer comprises a polymer. 12. The semiconductor device of claim 11, wherein the polymer comprises a photoimageable polymer. 13. The semiconductor device of claim 1, wherein the dielectric spacer layer comprises at least one of a glass, a silicon dioxide, a silicon nitride, and a silicon oxynitride. 14. The semiconductor device of claim 1, wherein the dielectric spacer layer is positioned on the active surface of the semiconductor die. 15. The semiconductor device of claim 1, wherein the dielectric spacer layer is positioned on a back side of the semiconductor die. 16. The semiconductor device of claim 1, further comprising: another dielectric spacer layer covering at least a portion of an opposite surface of the semiconductor die. 17. The semiconductor device of claim 1, further comprising: adhesive material on an exposed surface of the dielectric spacer layer. 18. The semiconductor device of claim 1, wherein the dielectric spacer layer comprises a plurality of at least partially superimposed, contiguous, adhered sublayers. 19. A semiconductor device assembly, comprising: a first semiconductor device including an active surface carrying bond pads that are configured to have intermediate conductive elements secured thereto; a nonconfluent spacer layer comprising dielectric material secured to the active surface of the first semiconductor device and, prior to securing an intermediate conductive element to any of the bond pads, protruding from the active surface substantially a same distance the active surface of the first semiconductor device is to be spaced apart from a back side of a second semiconductor device; and the second semiconductor device, including a back side secured to the nonconfluent spacer layer. 20. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises at least one void therein that communicates with a lateral periphery of the nonconfluent spacer layer. 21. The semiconductor device assembly of claim 20, wherein the at least one void facilitates lateral introduction of adhesive material between the first and second semiconductor devices. 22. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises a plurality of laterally discrete spacers. 23. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer has a substantially uniform thickness. 24. The semiconductor device assembly of claim 19, further comprising: at least one intermediate conductive element protruding above the active surface of the first semiconductor device and located at least partially between the first and second semiconductor devices. 25. The semiconductor device assembly of claim 24, wherein the nonconfluent spacer layer has a thickness that spaces the first and second semiconductor devices apart from one another a distance that exceeds a height the at least one intermediate conductive element protrudes above the active surface of the first semiconductor device. 26. The semiconductor device assembly of claim 24, wherein the nonconfluent spacer layer has a thickness that spaces the first and second semiconductor devices apart from one another a distance that is about the same as or less than a height the at least one discrete conductive element protrudes above the active surface of the first semiconductor device. 27. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises dielectric material. 28. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises a polymer. 29. The semiconductor device assembly of claim 28, wherein the polymer adheres to surfaces of the first semiconductor device and the second semiconductor device. 30. The semiconductor device assembly of claim 28, wherein the polymer comprises a photoimageable polymer. 31. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises a plurality of at least partially superimposed, contiguous, mutually adhered sublayers. 32. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises at least one of a glass, a silicon oxide, a silicon nitride, and a silicon oxynitride. 33. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises a pattern. 34. The semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises randomly arranged features. 35. The semiconductor device assembly of claim 19, further comprising: an adhesive material securing the nonconfluent spacer layer to at least one of the active surface of the first semiconductor device and the active surface of the second semiconductor device. 36. The semiconductor device assembly of claim 35, wherein the adhesive material is located within voids in the nonconfluent spacer layer. 37. The semiconductor device assembly of claim 19, further comprising: a substrate upon which the first semiconductor device is positioned. 38. The semiconductor device assembly of claim 37, wherein at least one bond pad of at least one of the first semiconductor device and the second semiconductor device is in communication with a corresponding contact area of the substrate. 39. The semiconductor device assembly of claim 37, wherein the substrate comprises at least one of a circuit board, an interposer, another semiconductor device, and leads. 40. The semiconductor device assembly of claim 19, further comprising: at least one additional semiconductor device. 41. semiconductor device assembly of claim 19, wherein the nonconfluent spacer layer comprises a plurality of layers, additive thicknesses of the plurality of layers defining substantially the same distance. 42. The semiconductor device assembly of claim 41, wherein a first layer of the plurality of layers is secured to the active surface of the first semiconductor device and a second layer of the plurality of layers is configured to be secured to the back side of the second semiconductor device. 43. The semiconductor device assembly of claim 41, wherein at least some solid regions of each of the plurality of layers are at least partially superimposed relative to one another.
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