Methods of forming metal wiring in semiconductor devices using etch stop layers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-021/02
출원번호
UP-0063936
(2005-02-23)
등록번호
US-7521357
(2009-07-01)
우선권정보
KR-10-2004-0012200(2004-02-24)
발명자
/ 주소
Lee, Sang woo
Choi, Gil heyun
Kang, Sang bom
Lee, Jong myeong
Park, Jin ho
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
Myers Bigel Sibley & Sajovec
인용정보
피인용 횟수 :
4인용 특허 :
5
초록▼
A method of forming a metal wiring in a semiconductor device can include forming an etch stop layer outside a contact hole formed in an insulation layer and avoiding forming the etch stop layer inside the contact hole. A conductive layer can be formed on the etch stop layer outside the contact hole
A method of forming a metal wiring in a semiconductor device can include forming an etch stop layer outside a contact hole formed in an insulation layer and avoiding forming the etch stop layer inside the contact hole. A conductive layer can be formed on the etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole and a metal layer can be formed on the conductive layer to fill the contact hole.
대표청구항▼
What is claimed is: 1. A method of forming a metal wiring in a semiconductor device comprising: forming a contact hole in an insulation layer after forming the contact hole, forming an etch stop layer outside the contact hole in the insulation layer and avoiding forming the etch stop layer inside t
What is claimed is: 1. A method of forming a metal wiring in a semiconductor device comprising: forming a contact hole in an insulation layer after forming the contact hole, forming an etch stop layer outside the contact hole in the insulation layer and avoiding forming the etch stop layer inside the contact hole; forming a conductive layer on the etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole; and forming a metal layer on the conductive layer to fill the contact hole. 2. A method according to claim 1, wherein forming the etch stop layer comprises forming a titanium/titanium nitride layer, a titanium nitride layer, a tantalum/tantalum nitride layer, a tantalum nitride layer, a zirconium nitride layer and/or a hafnium nitride layer. 3. A method according to claim 1, wherein forming the etch stop layer comprises forming a Titanium Nitride layer. 4. A method according to claim 3, wherein forming the titanium nitride-layer comprises: providing a nitrogen gas to a titanium layer to nitride the titanium layer. 5. A method according to claim 1, wherein forming the etch stop layer, forming the conductive layer and forming the metal layer are performed at a temperature of no more than about 450° Centigrade. 6. A method according to claim 1, wherein forming the etch stop layer outside the contact hole in the insulation layer and avoiding forming the etch stop layer inside the contact hole further comprises: forming the etch stop layer outside the contact hole and forming a portion of the etch stop layer inside the contact hole of a sidewall thereof proximate to an opening of the contact hole and avoiding forming the etch stop layer at a bottom of the contact hole; and removing the portion of the etch stop layer from inside the contact hole. 7. A method according to claim 1, wherein forming the conductive layer comprises forming a Tungsten layer. 8. A method according to claim 1, wherein the insulation layer comprises a first insulation layer, the etch stop layer comprises a first etch stop layer, the conductive layer comprises a first conductive layer, and the metal layer comprises a first metal layer, the method further comprising: forming a second insulation layer on the first metal layer having a pad hole formed therein exposing the first metal layer; forming a second etch stop layer outside the pad hole and avoiding forming the second etch stop layer inside the pad hole; forming a second conductive layer on the second etch stop layer outside the contact hole and on the exposed first metal layer inside the pad hole and on a sidewall of the pad hole; and forming a second metal layer on the second conductive layer to fill the pad hole. 9. A method according to claim 8, further comprising: removing the second metal layer from the second insulation layer to expose the second etch stop layer and to leave a remaining portion of the second etch stop layer on the second insulation layer. 10. A method according to claim 8, wherein forming the second etch stop layer comprises forming a titanium/titanium nitride layer, a titanium nitride layer, a tantalum/tantalum nitride layer, a tantalum nitride layer, a zirconium nitride layer and/or a hafnium nitride layer. 11. A method according to claim 8, wherein forming the second etch stop layer, forming the second conductive layer and forming the second metal layer are performed at a temperature of no more than about 450° Centigrade. 12. A method according to claim 1, further comprising: partially removing the metal layer from the insulation layer to expose the etch stop layer and to leave a remaining portion of the etch stop layer on the insulation layer. 13. A method according to claim 1 wherein the etch stop layer comprises a first metal nitride, and wherein the conductive layer comprises a second metal nitride different than the first metal nitride. 14. A method according to claim 1 wherein the etch stop layer comprises titanium nitride, wherein the conductive layer comprises tungsten nitride, and wherein the metal layer comprises tungsten. 15. A method of forming a metal wiring in a semiconductor device comprising: forming a first insulation layer on a substrate; forming a contact hole in the first insulation layer to expose a source/drain region in the substrate; after forming said contact hole, forming a first etch stop layer outside the contact hole and avoiding forming the first etch stop layer inside the contact hole; forming a first conductive layer on the first etch stop layer outside the contact hole and on an exposed conductive pattern inside the contact hole and on a sidewall of the contact hole; forming a first metal layer on the first conductive layer to fill the contact hole; forming a second insulation layer on the first metal layer having a pad hole formed therein exposing the first metal layer; forming a second etch stop layer outside the pad hole and avoiding forming the second etch stop layer inside the pad hole; forming a second conductive layer on the second etch stop layer outside the contact hole and on the exposed first metal layer inside the pad hole and on a sidewall of the pad hole; and forming a second metal layer on the second conductive layer to fill the pad hole. 16. A method according to claim 15, further comprising: removing the second metal layer from the second insulation layer to expose the second etch stop layer and to leave a remaining portion of the second etch stop layer on the second insulation layer. 17. A method according to claim 15, wherein forming the second etch stop layer comprises forming a titanium/titanium nitride layer, a titanium nitride layer, a tantalum/tantalum nitride layer, a tantalum nitride layer, a zirconium nitride layer and/or a hafnium nitride layer. 18. A method according to claim 15, wherein forming the second etch stop layer, forming the second conductive layer and forming the second metal layer are performed at a temperature of no more than about 450° Centigrade. 19. A method of forming a metal wiring in a semiconductor device comprising: providing an insulation layer on a substrate so that a conductive pattern is between the insulation layer and the substrate; forming a contact hole through the insulation layer exposing a portion of the conductive pattern; after forming the contact hole, forming an etch stop layer on the insulating layer opposite the substrate and outside the contact hole so that portions of a sidewall inside the contact hole are free of the etch stop layer; after forming the etch stop layer, forming a conductive layer on the etch stop layer outside the contact hole and on the conductive pattern inside the contact hole and on the sidewall of the contact hole; and forming a metal layer on the conductive layer to fill the contact hole. 20. A method according to claim 19, wherein forming the etch stop layer comprises forming a Titanium Nitride layer. 21. A method according to claim 20, wherein forming the titanium nitride-layer comprises: providing a nitrogen gas to a titanium layer to nitride the titanium layer. 22. A method according to claim 19, wherein forming the conductive layer comprises forming a Tungsten layer. 23. A method according to claim 19, wherein the insulation layer comprises a first insulation layer, the etch stop layer comprises a first etch stop layer, the conductive layer comprises a first conductive layer, and the metal layer comprises a first metal layer, the method further comprising: forming a second insulation layer on the first metal layer having a pad hole formed therein exposing the first metal layer; forming a second etch stop layer outside the pad hole and avoiding forming the second etch stop layer inside the pad hole; forming a second conductive layer on the second etch stop layer outside the contact hole and on the exposed first metal layer inside the pad hole and on a sidewall of the pad hole; and forming a second metal layer on the second conductive layer to fill the pad hole. 24. A method according to claim 19, further comprising: partially removing the metal layer from the insulation layer to expose the etch stop layer and to leave a remaining portion of the etch stop layer on the insulation layer.
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