IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0171018
(2005-07-01)
|
등록번호 |
US-7521985
(2009-07-01)
|
발명자
/ 주소 |
- Ball, Alan R.
- Robb, Stephen P.
|
출원인 / 주소 |
- Semiconductor Components Industries, L.L.C.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
5 |
초록
▼
A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion o
A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
대표청구항
▼
What is claimed is: 1. An integrated circuit, comprising: a thermal limit circuit having a thermal sense element, the thermal limit circuit configured to operate at a substantially constant temperature when that temperature is reached; and a semiconductor device coupled to the thermal limit circuit
What is claimed is: 1. An integrated circuit, comprising: a thermal limit circuit having a thermal sense element, the thermal limit circuit configured to operate at a substantially constant temperature when that temperature is reached; and a semiconductor device coupled to the thermal limit circuit, wherein the thermal sense element is thermally coupled to the semiconductor device. 2. The integrated circuit of claim 1, wherein the thermal sense element is coupled to a thermal amplifier. 3. The integrated circuit of claim 2, wherein the thermal sense element comprises: a biasing network having a biasing node; a temperature sensing diode having an anode and a cathode, wherein the cathode is coupled to the biasing node; and means for providing a temperature dependent voltage having an input and an output, the input coupled to the anode of the temperature sensing diode. 4. The integrated circuit of claim 3, wherein the means for providing the temperature dependent voltage comprises: a field effect transistor having a gate terminal, a drain terminal, and a source terminal, the gate terminal serving as the input, the drain terminal serving as the output, and the source terminal coupled for receiving a source of operating potential; and a resistor having first and second terminals, the first terminal coupled to the gate of the field effect transistor and the second terminal coupled for receiving a first source of operating potential. 5. The integrated circuit of claim 3, wherein the thermal amplifier comprises: a first insulated gate semiconductor device having a control electrode and first and second current conducting electrodes, the gate terminal coupled to the output of the thermal compensation network and the first current conducting electrode coupled for receiving the first source of operating potential; a first resistor having first and second terminals, the first terminal coupled to the second current conducting electrode of the first insulated gate semiconductor device; and a second insulated gate semiconductor device having a control electrode and first and second current conducting electrodes, the control electrode of the second insulated gate semiconductor device coupled to the first terminal of the first resistor and to the drain terminal of the first insulated gate semiconductor device, the first current conducting electrode of the second insulated gate semiconductor device serving as an output of the thermal amplifier, and the second current conducting electrode coupled for receiving the first source of operating potential. 6. The integrated circuit of claim 5, further including a thermal latch having an external pin for coupling to an element external to the semiconductor device. 7. The integrated circuit of claim 6, wherein the thermal latch further comprises: a third insulated gate semiconductor device having a control electrode, a first current conducting electrode coupled to the output of the thermal sense circuit, and a second current conducting electrode coupled for receiving the first source of operating potential; a Zener diode having an anode and a cathode, the anode coupled to the control electrode of the third insulated gate semiconductor device; a fourth insulated gate semiconductor device having a control electrode, a first current conducting electrode coupled to the cathode of the Zener diode, and a second current conducting electrode coupled for receiving the first source of operating potential; and a fifth insulated gate semiconductor device having a control electrode coupled to the second terminal of the first resistor, a first current conducting electrode coupled for receiving the first source of operating potential, and a second current conducting electrode coupled for receiving a second source of operating potential. 8. The integrated circuit of claim 7, further including a second resistor having first and second terminals, the first terminal of the second resistor coupled to the second terminal of the first resistor and to the control electrode of the fifth insulated gate semiconductor device, and the second terminal coupled for receiving the second source of operating potential. 9. The integrated circuit of claim 6, further including a capacitor coupled between the external pin and the second source of operating potential. 10. The integrated circuit of claim 6, further including an electrically conductive material coupled between the external pin and the first source of operating potential. 11. An integrated circuit, comprising: a thermal sense circuit having an output; a thermal latch having an input, an output, and a multi-function input pin for coupling to a circuit element that is external to the integrated circuit, and wherein the input is coupled to the output of the thermal sense circuit; a thermal amplifier having a latching input coupled to the output of the thermal latch, and an input coupled for receiving a linear signal from the thermal sense circuit; and a semiconductor device coupled to the thermal amplifier and thermally coupled to the thermal sense circuit. 12. The integrated circuit of claim 11, wherein the circuit element is one of a capacitor and a shorting wire. 13. The integrated circuit of claim 12, wherein the thermal latch comprises: a first insulated gate semiconductor device having a control electrode, a first current conducting electrode coupled to the output of the thermal sense circuit, and a second current conducting electrode coupled for receiving a first source of operating potential; a Zener diode having an anode and a cathode, the anode coupled to the control electrode of the first insulated gate semiconductor device; a second insulated gate semiconductor device having a control electrode, a first current conducting electrode coupled to the cathode of the Zener diode, and a second current conducting electrode coupled for receiving the first source of operating potential; and a third insulated gate semiconductor device having a control electrode coupled to the input coupled for receiving a linear signal, a first current conducting electrode coupled for receiving a first source of operating potential, and a second current conducting electrode coupled for receiving the first source of operating potential. 14. An integrated circuit, comprising: a first thermal sense element having an output terminal; a first transistor having a control electrode and first and second current carrying electrodes, the control electrode coupled to the output terminal of the thermal sense element and the first current carrying electrode coupled for receiving a first source of operating potential; a first drive circuit having an input terminal, an output terminal, a first supply terminal, and a second supply terminal, the first supply terminal coupled to the second current carrying electrode of the first transistor and the second supply terminal coupled for receiving a second source of operating potential; and a first power device having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the first power device coupled to the output terminal of the drive circuit, the first current carrying electrode coupled for receiving a third source of operating potential, and the second current carrying electrode coupled for receiving the second source of operating potential. 15. The integrated circuit of claim 14, wherein the thermal sense circuit is configured to operate in a linear mode. 16. The integrated circuit of claim 14, further including: a second thermal sense element having an output terminal; a second transistor having a control electrode and first and second current carrying electrodes, the control electrode coupled to the output terminal of the second thermal sense element and the first current carrying electrode coupled for receiving the first source of operating potential; a second drive circuit having an input terminal, an output terminal, a first supply terminal, and a second supply terminal, the first supply terminal coupled to the second current carrying electrode of the first transistor and the second terminal coupled for receiving the second source of operating potential; and a second power device having a control electrode, a first current carrying electrode, and a second current carrying electrode, the control electrode of the second power device coupled to the output terminal of the second drive circuit, the first current carrying electrode coupled for receiving the third source of operating potential and coupled to the first current carrying electrode of the first power device, and the second current carrying electrode coupled for receiving the second source of operating potential and coupled to the second current carrying electrode of the first power device.
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