Method of fabricating a semiconductor chip with a nitride compound semiconductor material
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/02
출원번호
UP-0314447
(2005-12-20)
등록번호
US-7524737
(2009-07-01)
우선권정보
DE-10 2004 062 290(2004-12-23)
발명자
/ 주소
Brüderl, Georg
Härle, Volker
출원인 / 주소
Osram Opto Semiconductors GmbH
대리인 / 주소
Cohen Pontani Lieberman & Pavane LLP
인용정보
피인용 횟수 :
1인용 특허 :
11
초록▼
In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation
In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).
대표청구항▼
We claim: 1. A process for producing a semiconductor chip which has an epitaxially produced functional semiconductor layer sequence, the process comprising the following process steps: providing a growth substrate; epitaxially growing the functional semiconductor layer sequence on the growth substr
We claim: 1. A process for producing a semiconductor chip which has an epitaxially produced functional semiconductor layer sequence, the process comprising the following process steps: providing a growth substrate; epitaxially growing the functional semiconductor layer sequence on the growth substrate; forming a separating zone, which lies parallel to a main surface of the growth substrate, in the growth substrate by ion implantation, said ion implantation into the growth substrate occurring subsequent to the epitaxial growth and occurring through the functional semiconductor layer sequence; applying a handle substrate to the functional semiconductor layer sequence; and detaching a part of the growth substrate which is remote from the handle substrate as seen from the separating zone, along the separating zone; wherein the functional semiconductor layer sequence includes a radiation-emitting active layer which comprises InxAlyGa1-x-yN, where 0≦x≦1, 0≦y≦1 and x+y≦1. 2. The process as claimed in claim 1, wherein the growth substrate and the functional semiconductor layer sequence have substantially the same lattice constant. 3. The process as claimed in claim 1, wherein the growth substrate and the functional semiconductor layer sequence are based on the same semiconductor material. 4. The process as claimed in claim 3, wherein the growth substrate and the functional semiconductor layer sequence are each formed from a nitride compound semiconductor material. 5. The process as claimed in claim 1, wherein the growth substrate is a GaN substrate or an AIN substrate. 6. The process as claimed in claim 1, wherein the detaching of that part of the growth substrate that is remote from the handle substrate as seen from the separation zone, along the separation zone is effected by it being thermally blasted off. 7. The process as claimed in claim 1, wherein the growth substrate is an electrically conductive substrate, in particular an n conducting substrate. 8. The process as claimed in claim 1, wherein the handle substrate is an electrically conductive substrate, in particular a p conducting substrate. 9. The process as claimed in claim 1, wherein hydrogen ions are implanted during the ion implantation. 10. The process as claimed in claim 1, wherein the ion implantation is followed by thermal annealing of the functional semiconductor layer sequence. 11. The process as claimed in claim 1, wherein the functional semiconductor layer sequence is provided with an electrical contact layer or contact layer sequence before the handle substrate is applied. 12. The process as claimed in claim 11, wherein the functional semiconductor layer sequence comprises a radiation-emitting active layer, and the electrical contact layer serves as a reflector for the emitted radiation. 13. A process for producing a semiconductor chip which has an epitaxially produced functional semiconductor layer sequence, the process comprising the following process steps: providing a growth substrate; epitaxially growing the functional semiconductor layer sequence on the growth substrate; forming a separating zone, which lies parallel to a main surface of the growth substrate, in the growth substrate by ion implantation, the ion implantation into the growth substrate occurring subsequent to the epitaxial growth and occurring through the functional semiconductor layer sequence; applying a handle substrate to the functional semiconductor layer sequence; and detaching a part of the growth substrate which is remote from the handle substrate as seen from the separating zone, along the separating zone; wherein the growth substrate and the functional semiconductor layer sequence are each formed from a nitride compound semiconductor material. 14. A process for producing a semiconductor chip which has an epitaxially produced functional semiconductor layer sequence, the process comprising the following process steps: providing a growth substrate; epitaxially growing the functional semiconductor layer sequence on the growth substrate; forming a separating zone, which lies parallel to a main surface of the growth substrate, in the growth substrate by ion implantation, the ion implantation into the growth substrate occurring subsequent to the epitaxial growth and occurring through the functional semiconductor layer sequence; applying a handle substrate to the functional semiconductor layer sequence; and detaching a part of the growth substrate which is remote from the handle substrate as seen from the separating zone, along the separating zone; wherein the functional semiconductor layer sequence is provided with an electrical contact layer or contact layer sequence before the handle substrate is applied.
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이 특허에 인용된 특허 (11)
Letertre,Fabrice; Ghyselen,Bruno; Rayssac,Olivier, Fabrication of substrates with a useful layer of monocrystalline semiconductor material.
Kelly, Michael; Ambacher, Oliver; Stutzmann, Martin; Brandt, Martin; Dimitrov, Roman; Handschuh, Robert, Method of separating two layers of material from one another and electronic components produced using this process.
Kish Fred A. (both San Jose CA) Steranka Frank M. (both San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.
Avramescu, Adrian Stefan; Eichler, Christoph; Strauss, Uwe; Haerle, Volker, Optoelectronic component and method for producing an optoelectronic component.
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