초록 ▼

An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconver

An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.

대표청구항 ▼

What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An image processing apparatus comprising: an image sensor for detecting an image and outputting image signals corresponding to the detected image; and an image processor for processing the image signals

What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An image processing apparatus comprising: an image sensor for detecting an image and outputting image signals corresponding to the detected image; and an image processor for processing the image signals outputted from the image sensor, wherein the image sensor comprises: a charge multiplying photoconversion layer; and a pixel array having a plurality of pixels, wherein each pixel comprises: a charge storage element electrically connected to the charge multiplying photoconversion layer at a first node, and a protection circuit electrically connected to the charge storage element and the charge multiplying photoconversion layer at the first node and to a reference potential at a second node for limiting a voltage which accumulates at the charge storage element. 2. The image processing apparatus of claim 1, wherein the protection circuit comprises a protection diode electrically connected to the storage element at the anode thereof and connected to the reference potential at a cathode thereof, whereby voltage accumulating at the storage element in excess of the reference potential is transferred away from the storage element through the protection diode. 3. The image processing apparatus of claim 1, wherein the protection circuit comprises: an n-MOS transistor having a drain and a gate both electrically connected to the storage element, and a source electrically connected to the reference potential, whereby voltage accumulating at the storage element in excess of the reference potential is transferred away from the storage element through the n-MOS transistor. 4. The image processing apparatus of claim 1, wherein the protection circuit comprises a resistor electrically connected to the charge multiplying photoconversion layer and the storage element. 5. The image processing apparatus of claim 1, further comprising a differential amplifier for receiving at an input thereof an output from the protection circuit. 6. A processing system, comprising: a processor for receiving and processing image data; and an image data generator for supplying image data to the processor, the image data generator comprising: an image sensor for obtaining an image and outputting an image signal; an image processor for processing the image signal; and a controller for controlling the image sensor and the image processor, wherein the image sensor comprises: a charge multiplying photoconversion layer, and a pixel array having a plurality of pixels, each pixel comprising: a charge storage element electrically connected to the charge multiplying photoconversion layer, and a protection circuit electrically connected on a first side to the charge storage element and to a reference voltage on a second side for limiting a voltage which accumulates at the charge storage element.