Copper gate electrode of liquid crystal display device and method of fabricating the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/20
H01L-021/02
출원번호
UP-0178436
(2005-07-12)
등록번호
US-7528466
(2009-07-01)
우선권정보
TW-93141259 A(2004-12-29)
발명자
/ 주소
Liu, Yu Wei
Tsai, Wen Ching
Huang, Kuo Yu
Lin, Hui Fen
출원인 / 주소
AU Optronics Corp.
대리인 / 주소
Bacon & Thomas, PLLC
인용정보
피인용 횟수 :
1인용 특허 :
5
초록▼
A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or c
A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
대표청구항▼
What is claimed is: 1. A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising: a patterned copper layer formed on a substrate; and a barrier layer, formed on the patterned copper layer, and the barrier layer comprising phosphorus. 2. The copper gate elect
What is claimed is: 1. A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising: a patterned copper layer formed on a substrate; and a barrier layer, formed on the patterned copper layer, and the barrier layer comprising phosphorus. 2. The copper gate electrode according to claim 1, wherein a thickness of the barrier layer ranges from about 500 nm to about 3000 nm. 3. The copper gate electrode according to claim 1 further comprising an adhesion layer formed between the patterned copper layer and the substrate. 4. The copper gate electrode according to claim 3, wherein the adhesion layer is substantially made of methylsilazane (MSZ), and a thickness of the adhesion layer is ranged from about 1000 nm to about 3000 nm. 5. The copper gate electrode according to claim 1 further comprising a silicon nitrite layer, an amorphous silicon (a-Si) layer and an n+ a-Si layer laminated over the barrier layer. 6. A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising: a patterned copper layer formed on a substrate; and a barrier layer, formed on the patterned copper layer, and the barrier layer comprising an alloy of M1M2R wherein M1 is molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P). 7. The copper gate electrode according to claim 6, wherein the barrier layer has a thickness ranged from about 5 nm to about 50 nm. 8. The copper gate electrode according to claim 6 further comprising an adhesion layer formed between the patterned copper layer and the substrate. 9. The copper gate electrode according to claim 8, wherein the adhesion layer is substantially made of methylsilazane (MSZ), and a thickness of the adhesion layer is ranged from about 1000 nm to about 3000 nm. 10. The copper gate electrode according to claim 6 further comprising a silicon nitrite layer, an amorphous silicon (a-Si) layer and an n+a-Si layer laminated over the barrier layer. 11. A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising: a patterned copper layer formed on a substrate; and a barrier layer, formed on the patterned copper layer, and the barrier layer comprising an alloy of M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P). 12. The copper gate electrode according to claim 11, wherein the barrier layer has a thickness ranged from about 5 nm to about 50 nm.
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이 특허에 인용된 특허 (5)
Chikama, Yoshimasa; Izumi, Yoshihiro, Method for fabricating metal wirings.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
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