초록 ▼

A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of

A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.

대표청구항 ▼

What is claimed is: 1. A structure, comprising: a core electrical conductor having a top surface, an opposite bottom surface and sides between said top and bottom surfaces; a dielectric liner formed on said sides of said core electrical conductor; an electrically conductive liner in direct physical

What is claimed is: 1. A structure, comprising: a core electrical conductor having a top surface, an opposite bottom surface and sides between said top and bottom surfaces; a dielectric liner formed on said sides of said core electrical conductor; an electrically conductive liner in direct physical contact with and covering said bottom surface of said core electrical conductor and said dielectric liner, embedded portions of said electrically conductive liner extending over said dielectric liner and said core electrical conductor in regions of said core electrical conductor adjacent to both said top surface and said sides of said core electrical conductor; an electrically conductive cap in direct physical contact with said top surface of said core electrical conductor that is exposed between said embedded portions of said electrically conductive liner; wherein said portions of said electrically conductive liner in direct physical contact with and extending over said core electrical conductor extend over said core electrical conductor from opposing pairs of sides of said sides of said core electrical conductor a distance between about 3% to about 48% of the total distance between said sides of said core electrical conductor; wherein top surfaces of said portions of said electrically conductive liner in direct physical contact with and extending over said core electrical conductor are coplanar with said top surface of said core electrical conductor; wherein said electrically conductive cap does not overlap said embedded portion of said electrically conductive liner and does not overlap any edge of said dielectric liner exposed between said electrically embedded portion of said conductive liner and said core electrical conductor; wherein said dielectric liner comprises a material selected from the group consisting of SiO2, Si3N4, SiC, SiON, SiOC, hydrogen doped silica glass (SiCOH), plasma-enhanced silicon nitride (PSiNx) or NBLoK (SiC(N,H)) and combinations thereof; wherein said electrically conductive liner comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof; wherein said core electrical conductor comprises a material selected from the group consisting of Al, AlCu, Cu, W, Ag, Au and combinations thereof; and wherein said electrically conductive cap comprises a material selected from the group consisting of CoWP, CoSnP, CoP, Pd or combinations thereof.