초록 ▼

A base plate for a power module includes: a metal plate, a ceramic base plate joined to the metal plate, and a release agent which includes boron provided in a joint surface between the metal plate and the ceramic base plate. A remaining amount of the release agent is less than 5, as an amount of bo

A base plate for a power module includes: a metal plate, a ceramic base plate joined to the metal plate, and a release agent which includes boron provided in a joint surface between the metal plate and the ceramic base plate. A remaining amount of the release agent is less than 5, as an amount of boron measured by fluorescence X-ray analysis, where the amount of boron is defined as a value obtained by an expression: (a peak height of B-Kα/a peak height of X-Kα) x 100000 and a crystal grain straining region in the joint surface is equal to or less than 40%, or an amount of crystal grain straining in the joint surface is equal to or less than 0.03%.

대표청구항 ▼

The invention claimed is: 1. A base plate for a power module comprising: a metal plate; a ceramic base plate that is joined to the metal plate and contains X as an element selected from the group consisting of aluminum and silicon; and a release agent which includes boron provided in a joint surfac

The invention claimed is: 1. A base plate for a power module comprising: a metal plate; a ceramic base plate that is joined to the metal plate and contains X as an element selected from the group consisting of aluminum and silicon; and a release agent which includes boron provided in a joint surface between the metal plate and the ceramic base plate, wherein a remaining amount of the release agent is less than 5 as an amount of boron measured by fluorescence X-ray analysis, a ceramic crystal grain straining region in the joint surface of the ceramic base plate is equal to or less than 40%, and the amount of boron is defined as a value obtained by an expression: (a peak height of B-Kα/ a peak height of X-Kα)×100000. 2. The base plate for a power module according to claim 1, wherein the metal plate is made of aluminum, and the ceramic base plate is made of any one of aluminum nitride and silicon nitride. 3. A power module comprising: the base plate for a power module according to claim 1; and a semiconductor chip mounted on the metal plate of the base plate for a power module. 4. A base plate for a power module comprising: a metal plate; a ceramic base plate that is joined to the metal plate and contains X as an element selected from the group consisting of aluminum and silicon; and a release agent which includes boron provided in a joint surface between the metal plate and the ceramic base plate, wherein a remaining amount of the release agent is less than 5 as an amount of boron measured by fluorescence X-ray analysis, an amount of ceramic crystal grain straining in the joint surface of the ceramic base plate is equal to or less than 0.03%, and the amount of boron is defined as a value obtained by an expression: (a peak height of B-Kα/ a peak height of X-Kα) ×100000. 5. The base plate for a power module according to claim 4, wherein the metal plate is made of aluminum, and the ceramic base plate is a plate made of any one of aluminum nitride and silicon nitride. 6. A power module comprising: the base plate for a power module according to claim 4; and a semiconductor chip mounted on the metal plate of the base plate for a power module.