초록 ▼

An image sensor includes a photoelectric converter formed in a semiconductor substrate to generate and integrate charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by th

An image sensor includes a photoelectric converter formed in a semiconductor substrate to generate and integrate charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by the photoelectric converter, and a second charge transmitter transmitting the excess charges to the overflow drain region and having a width which is at least half of a span of the photoelectric converter.

대표청구항 ▼

What is claimed is: 1. An image sensor comprising a pixel array in which a plurality of unit pixels are arranged in two dimensions, wherein each unit pixel comprises a photoelectric converter formed in a semiconductor substrate to generate charges and integrate the charges resulting from incident l

What is claimed is: 1. An image sensor comprising a pixel array in which a plurality of unit pixels are arranged in two dimensions, wherein each unit pixel comprises a photoelectric converter formed in a semiconductor substrate to generate charges and integrate the charges resulting from incident light, a first charge transmitter transmitting integrated charges to a charge detector, an overflow drain region discharging excess charges generated by the photoelectric converter, and a second charge transmitter transmitting the excess charges to the overflow drain region and having a width which is at least half of a span of the photoelectric converter, and the photoelectric converters of the plurality of unit pixels share the overflow drain region via second charge transmitters of the plurality of unit pixels, wherein the overflow drain region is disposed substantially between the second charge transmitters of the photoelectric converters, wherein the photoelectric converters of a plurality of unit pixels share the charge detector via first charge transmitters of the plurality of unit pixels, and wherein a first photoelectric converter shares a respective overflow drain region with a second adjacent photoelectric converter and a respective charge detector with a third adjacent photoelectric converter, the first, second, and third photoelectric converters being disposed in one of a row or column, wherein adjacent photoelectric converters do not share both the charge detector and the overflow drain region. 2. The image sensor of claim 1, wherein the width of the second charge transmitter is substantially the same as that of the span of the photoelectric converter. 3. The image sensor of claim 1, wherein the second charge transmitter is formed to be adjacent to at least one edge of the photoelectric converter. 4. The image sensor of claim 1, wherein the second charge transmitter comprises a plurality of transistors having a combined width forming the width of the second charge transmitter. 5. The image sensor of claim 1, wherein a potential barrier peak of the second charge transmitter is lower than a potential barrier peak of the first charge transmitter. 6. The image sensor of claim 1, wherein the second charge transmitter is a metal-oxide semiconductor (MOS) transistor that has a gate electrode electrically connected to a charge transmission signal, a source region electrically connected to the photoelectric converter, and a drain region electrically connected to the overflow drain region. 7. The image sensor of claim 1, wherein the second charge transmitter is an ion-implantation region formed in the semiconductor substrate. 8. The image sensor of claim 4, wherein a combined width of the transistors is at least half of the span of the photoelectric converter. 9. The image sensor of claim 4, wherein the transistors are adjacent to at least one edge of the photoelectric converter. 10. The image sensor of claim 8, wherein the combined width of the transistors is substantially the same as that of the span of the photoelectric converter. 11. The image sensor of claim 6, wherein the second charge transmitter further comprises an ion-implantation region underlying the gate electrode, the ion-implantation region controlling a potential barrier. 12. The image sensor of claim 6, wherein the MOS transistor is a trench-type MOS transistor.