초록 ▼

In an MOS type solid-state image pickup device in which unit pixels each including a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node N11, an amplifying transistor for outputting the signal of the floating node to a vertical signal line, and a reset

In an MOS type solid-state image pickup device in which unit pixels each including a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node N11, an amplifying transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node are arranged in a matrix form, a P-type MOS transistor is connected between a drain line to which the drain of the reset transistor is connected and a V shift register for selectively supplying the reset voltage to the drain line, and the potential of the floating node is set to the channel voltage of the P-type MOS transistor at the non-selection time.

대표청구항 ▼

What is claimed is: 1. A solid-state image pickup device comprising: a transfer transistor connected between a cathode of a photoelectrical conversion element and a floating node; an amplifying transistor connected between said floating node and a vertical signal line; a reset transistor connected

What is claimed is: 1. A solid-state image pickup device comprising: a transfer transistor connected between a cathode of a photoelectrical conversion element and a floating node; an amplifying transistor connected between said floating node and a vertical signal line; a reset transistor connected between said floating node and an intermittent voltage circuit, wherein said intermittent voltage circuit is connected between a driving circuit and a drain of said reset transistor, a gate of said intermittent voltage circuit being grounded. 2. A solid-state image pickup device according to claim 1, wherein pixels are arranged in a matrix form, a unit pixel of the pixels having said photoelectrical conversion element, said transfer transistor, said amplifying transistor, and said reset transistor. 3. A solid-state image pickup device according to claim 1, wherein said driving circuit is a shift register. 4. A solid-state image pickup device according to claim 1, wherein said transfer transistor transfers a signal of said photoelectrical conversion element to said floating node. 5. A solid-state image pickup device according to claim 1, wherein a gate of said transfer transistor is connected to said driving circuit. 6. A solid-state image pickup device according to claim 1, wherein said driving circuit controls said transfer transistor. 7. A solid-state image pickup device according to claim 1, wherein said transfer transistor is a field-effect transistor. 8. A solid-state image pickup device according to claim 1, wherein said transfer transistor is an N-type MOS transistor. 9. A solid-state image pickup device according to claim 1, wherein said amplifying transistor outputs a signal of said floating node to said signal line. 10. A solid-state image pickup device according to claim 1, wherein said amplifying transistor is connected between said vertical signal line and a power source. 11. A solid-state image pickup device according to claim 1, wherein a gate of said amplifying transistor is connected to said floating node. 12. A solid-state image pickup device according to claim 1, wherein said amplifying transistor is a field-effect transistor. 13. A solid-state image pickup device according to claim 1, wherein said amplifying transistor is an N-type MOS transistor. 14. A solid-state image pickup device according to claim 1, wherein said reset transistor is configured to reset said floating node. 15. A solid-state image pickup device according to claim 1, wherein a gate of said reset transistor is connected to said driving circuit. 16. A solid-state image pickup device according to claim 1, wherein said driving circuit controls said reset transistor. 17. A solid-state image pickup device according to claim 1, wherein said reset transistor is a field-effect transistor. 18. A solid-state image pickup device according to claim 1, wherein said reset transistor is an N-type MOS transistor. 19. A solid-state image pickup device according to claim 1, wherein said intermittent voltage circuit is a field-effect transistor. 20. A solid-state image pickup device according to claim 1, wherein said intermittent voltage circuit is P-type MOS transistor. 21. A solid-state image pickup device according to claim 1, wherein said transfer transistor, said amplifying transistor, and said reset transistor are MOS transistors of the same conductivity type. 22. A solid-state image pickup device according to claim 21, wherein said intermittent voltage circuit is MOS transistors of having a conductivity type opposite to said transfer, amplifying, and reset transistors. 23. A camera system comprising: the solid-state image pickup device according to claim 1; an optical system for guiding incident light to said image pickup portion of said solid-state image pickup device; and a signal processing circuit for processing the output signal of said solid-state image pickup device.