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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | UP-0929272 (2004-08-30) |
| 등록번호 | US-7560793 (2009-07-27) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 18 인용 특허 : 689 |
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.
What is claimed is: 1. A semiconductor device, comprising: a substrate; and an atomic layer deposition first layer deposited on the substrate, wherein the first layer is deposited by sequentially pulsing a precursor gas and a reactant into a reaction chamber, and wherein the precursor gas and react
What is claimed is: 1. A semiconductor device, comprising: a substrate; and an atomic layer deposition first layer deposited on the substrate, wherein the first layer is deposited by sequentially pulsing a precursor gas and a reactant into a reaction chamber, and wherein the precursor gas and reactant react to deposit the first layer on the substrate, the first layer including a material A, and wherein the first layer is converted to a second layer by a converting gas, the second layer including material B, and wherein the second layer forms a material Ax By, where x is the number of atomic bonds associated with the material A and y is the number of atomic bonds associated with the material B, and wherein the material B comprises at least one of carbon, boron and fluorine. 2. The semiconductor device according to claim 1, wherein the material A is an atomic layer deposition metal. 3. The semiconductor device according to claim 2, wherein the second layer is a dielectric. 4. The semiconductor device according to claim 3, wherein at least one of the first and the second metal layers include at least one of titanium, tantalum and aluminum. 5. The semiconductor device of claim 1, wherein the second layer comprises at least one of a carbide, a boride and a fluoride. 6. The semiconductor device of claim 4, wherein the second layer comprises at least one of carbide, a boride and a fluoride. 7. The semiconductor device of claim 1, wherein the second layer comprises carbon and boron, or carbon and fluoride, or boron and fluoride. 8. The semiconductor device of claim 3, wherein the second layer comprises a phosphide. 9. The semiconductor device of claim 4, wherein the second layer comprises a two element layer including a carbide, a nitride, a boride, a fluoride, or a phosphide.
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