Method of fabrication of interconnect structures
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-021/02
출원번호
UP-0860602
(2007-09-25)
등록번호
US-7563710
(2009-07-29)
발명자
/ 주소
Yang, Chih Chao
Clevenger, Lawrence A.
Cowley, Andrew P.
Dalton, Timothy J.
Yoon, Meeyoung H.
출원인 / 주소
International Business Machines Corporation
대리인 / 주소
Schmeiser, Olsen & Watts
인용정보
피인용 횟수 :
0인용 특허 :
10
초록▼
A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench
A method of forming a damascene wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor.
대표청구항▼
What is claimed is: 1. A method, comprising: forming a dielectric layer on a substrate; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by said har
What is claimed is: 1. A method, comprising: forming a dielectric layer on a substrate; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by said hard mask layer, said trench having sidewalls and a bottom; after forming said trench, recessing said sidewalls of said trench under said hard mask layer, after said recessing said hardmask layer overhanging said sidewalls of said trench; after said recessing, forming a conformal electrically conductive liner on all exposed surfaces of said trench and said hard mask layer, after said forming said conformal liner, regions of said conductive liner overhang said sidewalls of said trench; forming a layer of electrically conductive core conductor on said conductive liner, said layer of core conductor filling said trench; removing said hard mask layer and all regions of said layer of core conductor and said conductive liner extending above said top surface of said dielectric layer, after said removing said hard mask layer, regions of said core conductor extend under regions of said conductive liner; and forming an electrically conductive cap only on a top surface of remaining said core electrical conductor. 2. The method of claim 1, wherein said electrically conductive liner and said electrically conductive cap are diffusion barriers to one or more materials said core electrical conductor is comprised of. 3. The method of claim 1, wherein said hard mask layer comprises a material selected from the group consisting of SiO2, Si3N4, SiC, SiON, SiOC, SiCOH, PsiNX and SiC(N,H). 4. The method of claim 1, wherein said dielectric layer comprises a material selected from the group consisting of a dielectric material having a relative permittivity of about 4 or less, hydrogen silsesquioxane polymer, methyl silsesquioxane polymer, polyphenylene oligomer, SiO2 and combinations thereof. 5. The method of claim 1, wherein said electrically conductive liner comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof. 6. The method of claim 1, wherein said core electrical conductor comprises a material selected from the group consisting of Al, AlCu, Cu, W, Ag, Au and combinations thereof. 7. The method of claim 1, wherein said electrically conductive cap comprises a material selected from the group consisting of CoWP, CoSnP, CoP, Pd or combinations thereof. 8. The method of claim 1, wherein said dielectric layer comprises a first dielectric layer formed on a top surface of a second dielectric layer, said first dielectric layer being a diffusion barrier to one or more materials said core electrical conductor is comprised of. 9. The method of claim 1, wherein said forming an electrically conductive cap includes an electroless plating of at least a portion of said electrically conductive cap. 10. The method of claim 1, wherein forming said conductive liner includes simultaneously depositing and sputter etching a metal layer on said sidewalls of said trench. 11. The method of claim 10, wherein said sputter etching generates sputtering species from gases selected from the group consisting of Ar, He, Ne, Xe, N2, H2 NH3, N2H2 and combinations thereof. 12. The method of claim 10, wherein said metal layer comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof. 13. A method, comprising: forming a dielectric layer on a substrate; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by said hard mask layer, said trench having sidewalls and a bottom; after forming said trench, recessing said sidewalls of said trench under said hard mask layer, after said recessing said hard mask layer overhanging said sidewalls of said trench; after said recessing, forming a conformal electrically conductive liner on all exposed surfaces of said trench and said hard mask layer, after forming said conductive liner, regions of said conductive liner overhang said sidewalls of said trench; after forming said conductive liner, forming a conformal dielectric layer on exposed surfaces of said conductive liner; removing regions of said conformal dielectric layer from regions of said conductive liner on said bottom surfaces of said trenches, after said removing regions of said conformal dielectric layer, regions of said conformal dielectric layer extend under said conductive liner; forming a layer of electrically conductive core conductor on said conductive liner, said layer of core conductor filling said trench; removing said hardmask layer and all regions of said layer of core conductor, said conformal dielectric layer and said conductive liner extending above said top surface of said dielectric layer; and forming an electrically conductive cap only on a top surface of remaining said core electrical conductor. 14. The method of claim 13, further including: before said forming a layer of electrically conductive core conductor, forming a conformal and electrically conductive additional conductive liner on all exposed surfaces of said conductive liner and said conformal dielectric layer; and after said forming a layer of electrically conductive core conductor, removing all regions of said additional conductive liner extending above said top surface of said dielectric layer. 15. The method of claim 13, wherein said electrically conductive liner and said electrically conductive cap are diffusion barriers to one or more materials said core electrical conductor is comprised of. 16. The method of claim 13, wherein said hard mask layer comprises a material selected from the group consisting of SiO2, Si3N4, SiC, SiON, SiOC, SiCOH, PsiNX arid SiC(N,H). 17. The method of claim 13, wherein said dielectric layer comprises a material selected from the group consisting of a dielectric material having a relative permittivity of about 4 or less, hydrogen silsesquioxane polymer, methyl silsesquioxane polymer, polyphenylene oligomer, SiO2 and combinations thereof. 18. The method of claim 13, wherein said electrically conductive liner comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof. 19. The method of claim 13, wherein said core electrical conductor comprises a material selected from the group consisting of Al, AlCu, Cu, W, Ag, Au and combinations thereof. 20. The method of claim 13, wherein said electrically conductive cap comprises a material selected from the group consisting of CoWP, CoSnP, CoP, Pd or combinations thereof. 21. The method of claim 13, wherein said dielectric layer comprises a first dielectric layer formed on a top surface of a second dielectric layer, said first dielectric layer being a diffusion barrier to one or more materials said core electrical conductor is comprised of. 22. The method of claim 13, wherein said forming an electrically conductive cap includes an electroless plating of at least a portion of said electrically conductive cap. 23. The method of claim 13, wherein forming said conductive liner includes simultaneously depositing and sputter etching a metal layer on said sidewalls of said trench. 24. The method of claim 23, wherein said sputter etching generates sputtering species from gases selected from the group consisting of Ar, He, Ne, Xe, N2, H2 NH3, N2H2 and combinations thereof. 25. The method of claim 23, wherein said metal layer comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof.
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