초록

A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

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We claim: 1. A process for producing a boron or silicon doped metal nitride thin film on a substrate in a reaction chamber by atomic layer deposition, the process comprising at least one ALD cycle in which the following steps are performed in order: providing a first vapor phase reactant pulse comp

We claim: 1. A process for producing a boron or silicon doped metal nitride thin film on a substrate in a reaction chamber by atomic layer deposition, the process comprising at least one ALD cycle in which the following steps are performed in order: providing a first vapor phase reactant pulse comprising a metal precursor into the reaction chamber to form no more than about a single molecular layer of the metal precursor on the substrate; removing excess first reactant from the reaction chamber; providing a second vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber such that the nitrogen precursor reacts with the metal precursor on the substrate; removing excess second reactant and any reaction by-products from the reaction chamber; providing a third vapor phase reactant pulse comprising a silicon or boron precursor to the reaction chamber; removing excess third reactant and any reaction by-products from the reaction chamber; providing a fourth vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber; and removing excess fourth reactant and any reaction by-products from the reaction chamber. 2. The process according to claim 1, wherein the second vapor phase reactant and fourth vapor phase reactant comprise NH3. 3. The process according to claim 1, wherein the second vapor phase reactant and fourth vapor phase reactant both comprise nitrogen and hydrogen containing plasma. 4. The process according to claim 1, wherein the fourth vapor phase reactant is hydrogen containing plasma. 5. The process according to claim 1, comprising using as a precursor of silicon or boron a compound according to formula I R1pAXq I wherein A stands for silicon or boron; R1 stands for an organic ligand bonded to A by a carbon-A bond; X stands for a halogen; q is an integer having a value in the range from 1 to the valence of A; and p is an integer having a value in the range from 0 to q-1. 6. The process according to claim 5, comprising using a compound of formula I, wherein q has a value in the range from 2 to the valence of A, and X is selected from the group of chloro, bromo, iodo and fluoro. 7. The process according to claim 5, comprising using a compound of formula I, wherein p is greater than zero, and wherein R1 is selected from the group of: linear or branched C1-C20 alkyl or alkenyl groups; halogenated alkyl or alkenyl groups, wherein at least one hydrogen atom is replaced with a fluorine, chlorine, bromine or iodine atom; carbocyclic groups; and heterocyclic groups. 8. The process according to claim 5, comprising using a compound selected from the group of SiCl4 and BCl3 as the precursor of silicon or boron. 9. The process according to claim 5, wherein the fourth vapor phase reactant pulse is introduced into the reactor over a time interval which is 2 to 20 times longer than the time interval for the introduction of the second vapor phase reactant pulse. 10. The process according to claim 1, wherein the metal precursor is selected from precursors of niobium, tantalum, titanium, tungsten and molybdenum and mixtures thereof. 11. The process according to claim 10, wherein the metal precursor is a chloride compound of the metal. 12. The process according to claim 1, wherein the substrate is maintained at a temperature of 300-500° C. 13. A method of fabricating a semiconductor device, comprising depositing a gate dielectric layer over a semiconductor substrate; forming a gate electrode comprising a lower part and an upper part over the gate dielectric layer, the gate dielectric layer and the gate electrode forming a gate stack; and tuning the overall electronegativity of the lower part of the gate electrode to provide a desired work function of the gate stack, wherein at least the lower part of the gate electrode is formed by an atomic layer deposition (ALD) type process comprising one or more deposition cycles, each cycle comprising a sequence of alternating and repeated exposure of the substrate to two or more different reactants to form an elemental metal film or a compound film of at least binary composition, and wherein the work function of the lower part of the electrode is tuned by adjusting the deposition cycles by introducing at least one pulse of a precursor of silicon or boron or a combination thereof in selected deposition cycles, wherein the precursor of silicon or boron is a compound having the formula I R1pAXq I wherein A stands for silicon or boron; R1 stands for an organic ligand bonded to A by a carbon-A bond; X stands for halogen; q is an integer having a value in the range from 1 to the valence of A; and p is an integer having a value in the range from 0 to q-1. 14. The process according to claim 13, comprising using a compound selected from the group of SiCl4 and BCl3 as the precursor of silicon or boron. 15. A process for producing metal nitride thin films having enhanced barrier properties, comprising doping the metal nitride thin films with silicon or boron or a combination thereof by an atomic layer deposition (ALD) type process using as a precursor of silicon or boron a compound having the formula I R1pAXq I wherein A stands for silicon or boron; R1 stands for an organic ligand bonded to A by a carbon-A bond; X stands for halogen; q is an integer having a value in the range from 1 to the valence of A; and p is an integer having a value in the range from 0 to q-1, wherein the atomic layer deposition process comprises multiple metal deposition cycles and multiple dopant deposition cycles, wherein a metal deposition cycle comprises: providing a vapor phase reactant pulse comprising a metal precursor into the reaction chamber to form no more than about a single molecular layer of the metal precursor on the substrate; and providing a vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber such that the nitrogen reacts with the metal precursor on the substrate; wherein a dopant deposition cycle comprises: providing a vapor phase reactant pulse comprising a silicon or boron precursor of the formula (I) into the reaction chamber to form no more than about a single molecular layer of the silicon or boron precursor on the substrate; and providing a vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber such that the nitrogen reacts with the silicon or boron precursor on the substrate; wherein at least one dopant deposition cycle immediately follows a metal deposition cycle, and wherein the metal deposition cycle and dopant deposition cycle are repeated until a thin film of the desired composition and thickness is formed. 16. The process according to claim 15, comprising using a compound selected from the group of SiCl4 and BCl3 as the precursor of silicon or boron. 17. An atomic layer deposition type process for producing doped metal nitride thin films for electrodes in capacitor structures, comprising doping the metal nitride thin films using precursors of silicon or boron or a combination thereof, said precursors having the formula I R1pAXq I wherein A stands for silicon or boron; R1 stands for an organic ligand bonded to A by a carbon-A bond; X stands for halogen; q is an integer having a value in the range from 1 to the valence of A; and p is an integer having a value in the range from 0 to q-1 wherein the atomic layer deposition process comprises multiple metal deposition cycles and multiple dopant deposition cycles, wherein a metal deposition cycle comprises: alternately and sequentially providing a vapor phase reactant pulse comprising a metal precursor and a vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber; wherein a dopant deposition cycle comprises: alternately and sequentially providing a vapor phase reactant pulse comprising a silicon or boron precursor of the formula (I) and a vapor phase reactant pulse comprising a nitrogen precursor to the reaction chamber; wherein at least one dopant deposition cycle immediately follows a metal deposition cycle, and wherein the metal deposition cycle and dopant deposition cycle are repeated until a thin film of the desired composition is formed. 18. The method of claim 15, wherein the vapor phase reactant pulse comprising nitrogen in the dopant deposition cycle is introduced into the reactor over a time interval which is 2 to 20 times longer than the time interval for the vapor phase reactant pulse comprising nitrogen in the metal deposition cycle. 19. The process according to claim 17, comprising using a compound selected from the group of SiCl4 and BCl3 as a precursor of silicon or boron. 20. The method of claim 17, wherein the metal precursor comprises niobium, tantalum, titanium, tungsten and molybdenum.