초록 ▼

The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines sealed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer to form a sealed re

The present invention relates to a pressure sensor. The pressure sensor includes a substrate assembly. The substrate assembly defines sealed channels and includes a conductive layer. A conductive membrane extends from the substrate assembly and is spaced from the conductive layer to form a sealed reference chamber. A cap defines apertures. The cap extends from the substrate assembly to cover the membrane and thereby form an apertured chamber.

대표청구항 ▼

The invention claimed is: 1. A capacitive pressure sensor comprising: a substrate assembly having a first substrate bonded to a second substrate via an intermediate bonding layer so as to define sealed channels in the first substrate; a conductive layer on the first substrate; a conductive membrane

The invention claimed is: 1. A capacitive pressure sensor comprising: a substrate assembly having a first substrate bonded to a second substrate via an intermediate bonding layer so as to define sealed channels in the first substrate; a conductive layer on the first substrate; a conductive membrane extending from the first substrate and spaced from the conductive layer to form a capacitor and a sealed reference chamber having said sealed channels; and a cap defining apertures, and extending from the first substrate to cover the membrane and form an apertured chamber. 2. A pressure sensor as claimed in claim 1, wherein: the first substrate is a silicon substrate; a CMOS layer is deposited on the silicon substrate; the conductive layer is deposited on the CMOS layer; and a protective passivation layer is deposited on the conductive layer. 3. A pressure sensor as claimed in claim 2, wherein the passivation layer is formed from an insulating material. 4. A pressure sensor as claimed in claim 2, wherein the passivation layer is formed from a semi-conducting material. 5. A pressure sensor as claimed in claim 2, wherein the CMOS layer has guard rings surrounding the sealed channels to prevent air contained in the sealed channels from corroding circuitry. 6. A pressure sensor as claimed in claim 1, wherein the membrane has a peripheral portion which is located between the substrate assembly and the cap. 7. A pressure sensor as claimed in claim 6, wherein the cap has a peripheral portion on the peripheral portion of the membrane. 8. A pressure sensor as claimed in claim 1, wherein the intermediate bonding layer comprises a low melting point material. 9. A pressure sensor as claimed in claim 8, wherein the low melting point material is selected from the group consisting of: Au--Si; Glass Frit; Au--Au; PDMS; TiN; Si3N4; LPCVD PSG; APCVD BO; and Boron-Doped Si.