초록 ▼

A method of making a solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive sub

A method of making a solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.

대표청구항 ▼

The invention claimed is: 1. A method of manufacturing a solid state thermal transfer device, comprising: providing first and second electrically conductive substrates; providing a sealing layer between the first and second electrically conductive substrates; disposing a plurality of hollow structu

The invention claimed is: 1. A method of manufacturing a solid state thermal transfer device, comprising: providing first and second electrically conductive substrates; providing a sealing layer between the first and second electrically conductive substrates; disposing a plurality of hollow structures on the sealing layer between the first and second electrically conductive substrates in a configuration in which the first and second electrically conductive substrates are positioned opposite each other, wherein each of the plurality of hollow structures comprises a conductive material; and wherein disposing the plurality of hollow structures comprises disposing multiple hollow structures within a plurality of hollow shapes on the sealing layer and bonding the first and second electrically conductive substrates in the configuration. 2. The method of claim 1, further comprising disposing an electrical barrier layer between the first and second electrically conductive substrates on the first or second electrically conductive substrates. 3. The method of claim 1, wherein the conductive material comprises an electrically conductive material or a thermoelectric material. 4. The method of claim 1, further comprising forming a plurality of solid state thermal transfer units having opposite sections of the first and second electrically conductive substrates, each unit having a plurality of the hollow structures having the conductive material disposed between the first and second electrically conductive substrates. 5. The method of claim 1, further comprising disposing the plurality of hollow structures having the conductive material within a plurality of layers between the first and second electrically conductive substrates. 6. The method of claim 5, further comprising disposing another electrically conductive substrate between successive layers of the hollow structures having the conductive material between the first and second electrically conductive substrates. 7. The method of claim 1, further comprising deforming the hollow structures to provide a substantially high thermal conductivity of the device.