Semiconductor device having EL element, integrated circuit and adhesive layer therebetween
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/15
H01L-029/26
H01L-029/02
H01L-031/12
H01L-033/00
출원번호
UP-0795445
(2004-03-09)
등록번호
US-7576362
(2009-08-31)
우선권정보
JP-2003-069742(2003-03-14)
발명자
/ 주소
Takayama, Toru
Maruyama, Junya
Ohno, Yumiko
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
5인용 특허 :
54
초록▼
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, se
To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
대표청구항▼
What is claimed is: 1. A semiconductor device comprising: a first plastic substrate; a first insulating film formed over the first plastic substrate; an EL element formed over the first insulating film; a second plastic substrate; a second insulating film formed below the second plastic substrate;
What is claimed is: 1. A semiconductor device comprising: a first plastic substrate; a first insulating film formed over the first plastic substrate; an EL element formed over the first insulating film; a second plastic substrate; a second insulating film formed below the second plastic substrate; a semiconductor integrated circuit formed below the second insulating film and formed over the EL element; a first adhesive layer between the EL element and the semiconductor integrated circuit; a second adhesive layer between the first insulating film and the first plastic substrate; and a third adhesive layer between the second insulating film and the second plastic substrate, wherein a first terminal electrode of the semiconductor integrated circuit is electrically connected to a second terminal electrode over the first plastic substrate through conductive particles. 2. A semiconductor device according to claim 1, wherein a space between the first plastic substrate and the second plastic substrate is kept with a sealing material, and wherein a region surrounded by the sealing material is filled with the first adhesive layer. 3. A semiconductor device according to claim 1, wherein the semiconductor integrated circuit comprises: a central processing unit comprising: a control unit; and an arithmetic unit; and a memory unit, and wherein the central processing unit comprises a plurality of thin film transistors. 4. A semiconductor device according to claim 1, wherein the semiconductor integrated circuit comprises: a thin film diode; a silicon-based PIN junction photoelectric conversion element; and a silicon resistance element. 5. A semiconductor device according to claim 1, wherein the second plastic substrate comprises a material selected from the group consisting of polypropylene, polypropylene sulfide, polycarbonate, polyether imide, polyphenylene sulfide, polyphenylene oxide and polysulfone. 6. A semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a card, and a portable information terminal. 7. A semiconductor device comprising: a first plastic substrate; a first insulating film formed over the first plastic substrate; an EL element formed over the first insulating film; a second plastic substrate; a second insulating film formed below the second plastic substrate; a semiconductor integrated circuit formed below the second insulating film and formed over the EL element; a first adhesive layer between the EL element and the semiconductor integrated circuit; a second adhesive layer between the first insulating film and the first plastic substrate; and a third adhesive layer between the second insulating film and the second plastic substrate. 8. A semiconductor device comprising: a first plastic substrate; a first insulating film formed over the first plastic substrate; a transistor formed over the first insulating film; an EL element formed over the transistor; a second plastic substrate; a second insulating film formed below the second plastic substrate; a semiconductor integrated circuit formed below the second insulating film and formed over the EL element; a first adhesive layer between the EL element and the semiconductor integrated circuit; a second adhesive layer between the first insulating film and the first plastic substrate; and a third adhesive layer between the second insulating film and the second plastic substrate. 9. A semiconductor device according to claim 7, wherein a space between the first plastic substrate and the second plastic substrate is kept with a sealing material, and wherein a region surrounded by the sealing material is filled with the first adhesive layer. 10. A semiconductor device according to claim 7, wherein the semiconductor integrated circuit comprises: a central processing unit comprising: a control unit; and an arithmetic unit; and a memory unit, and wherein the central processing unit comprises a plurality of thin film transistors. 11. A semiconductor device according to claim 7, wherein the semiconductor integrated circuit comprises: a thin film diode; a silicon-based PIN junction photoelectric conversion element; and a silicon resistance element. 12. A semiconductor device according to claim 7, wherein the second plastic substrate comprises a material selected from the group consisting of polypropylene, polypropylene sulfide, polycarbonate, polyether imide, polyphenylene sulfide, polyphenylene oxide and polysulfone. 13. A semiconductor device according to claim 7, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a card, and a portable information terminal. 14. A semiconductor device according to claim 8, wherein a space between the first plastic substrate and the second plastic substrate is kept with a sealing material, and wherein a region surrounded by the sealing material is filled with the first adhesive layer. 15. A semiconductor device according to claim 8, wherein the semiconductor integrated circuit comprises: a central processing unit comprising: a control unit; and an arithmetic unit; and a memory unit, and wherein the central processing unit comprises a plurality of thin film transistors. 16. A semiconductor device according to claim 8, wherein the semiconductor integrated circuit comprises: a thin film diode; a silicon-based PIN junction photoelectric conversion element; and a silicon resistance element. 17. A semiconductor device according to claim 8, wherein the second plastic substrate comprises a material selected from the group consisting of polypropylene, polypropylene sulfide, polycarbonate, polyether imide, polyphenylene sulfide, polyphenylene oxide and polysulfone. 18. A semiconductor device according to claim 8, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, a card, and a portable information terminal.
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